CGHV22200-TB [CREE]
200 W, 1800-2200 MHz, GaN HEMT for LTE;
| 型号： | CGHV22200-TB |
| 厂家： | 
CREE, INC |
| 描述： | 200 W, 1800-2200 MHz, GaN HEMT for LTE LTE |
| 文件： | 总13页 (文件大小：1096K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV22200
200 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEM
is designed specifically for high efficiency, high gain and wide bandwidth capabilitie
which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BW
amplifier applications. The transistor is input matched and supplied in a ceramic
metal flange package.
Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Units
Gain @ 47 dBm
16.6
19.2
18.1
dB
ACLR @ 47 dBm
Drain Efficiency @ 47 dBm
Note:
-37.4
31.5
-37.4
31.9
-35.6
34.8
dBc
%
Measured in the CGHV22200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF. IDS = 1.0 A
Features
•
•
•
•
•
1.8 - 2.2 GHz Operation
18 dB Gain
-35 dBc ACLR at 50 W PAVE
31-35 % Efficiency at 50 W PAVE
High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
125
Units
Volts
Volts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
VGS
-10, +2
-65, +150
225
25˚C
Storage Temperature
TSTG
Operating Junction Temperature3
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
T
˚C
J
IGMAX
IDMAX
TS
32
mA
A
25˚C
25˚C
12
245
˚C
80
in-oz
˚C/W
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Thermal Resistance, Junction to Case4
Case Operating Temperature5
RθJC
RθJC
TC
1.22
85˚C, PDISS = 96 W
85˚C, PDISS = 96 W
1.54
-40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV22200P
4 Measured for the CGHV22200F
5 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
28.8
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 32 mA
VDS = 50 V, ID = 1.0 A
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 32 mA
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
24
–
VBR
150
–
VDC
RF Characteristics3 (TC = 25˚C, F0 = 2.17 GHz unless otherwise noted)
Saturated Output Power3,4
Pulsed Drain Efficiency3
Gain6
PSAT
–
–
–
–
–
240
65
–
–
–
–
–
W
%
VDD = 50 V, IDQ = 1.0 A
η
VDD = 50 V, IDQ = 1.0 A, POUT = PSAT
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
G
ACLR
η
18.0
-36.7
34.5
dB
dBc
%
WCDMA Linearity6
Drain Efficiency6
No damage at all phase angles, VDD = 50 V, IDQ
= 1.0 A, POUT = 200 W Pulsed
Output Mismatch Stress3
VSWR
–
–
10 : 1
Y
Dynamic Characteristics
Input Capacitance7
CGS
CDS
CGD
–
–
–
97
–
–
–
pF
pF
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance7
13.4
0.94
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 100 µS, Duty Cycle = 10%
4 PSAT is defined as IG = 3 mA peak.
5 Measured in CGHV22200-AMP
6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
7 Includes package and internal matching components.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGHV22200 Rev 2.0
Typical Performance
Figure 1. - Small Signal Gain and Return Losses vs Frequency for the
CGHV22200 measured in CGHV22200-AMP Amplifier Circuit
VDD = 50 V, IDQ = 1.0 A
25
20
15
10
5
0
-5
-10
-15
-20
-25
S11
S21
S22
1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800
Frequency (MHz)
Figure 2. - Typical Gain and Drain Efficiency vs Input Power
of the CGHV22200 measured in CGHV22200-AMP Amplifier Circuit.
DS = 50 V, IDQ = 1.0 A, Freq = 2.1 GHz, Pulse Width = 100 µs, Duty Cycle = 10 %
V
350
300
250
200
150
100
50
70
60
50
40
30
20
10
0
Pout
Gain
EFF
Drain
Efficiency
Pout
Gain
0
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
Input Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGHV22200 Rev 2.0
Typical Performance
Figure 3. - Typical WCDMA Transfer Characteristics
VDD = 50 V, IDS = 1.0 A, 1c WCDMA, PAR = 7.5 dB
-10
-15
-20
-25
-30
-35
-40
-45
-50
40
35
30
25
20
15
10
5
ACLR 1.8 GHz
ACLR 2.0 GHz
ACLR 2.2 GHz
Gain 1.8 GHz
Gain 2.0 GHz
Gain 2.2 GHz
EFF 1.8 GHz
EFF 2.0 GHz
EFF 2.2 GHz
0
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
Output Power (dBm)
Figure 4. - Typical Gain, Drain Efficiency and ACLR vs Frequency
of the CGHV22200 measured in CGHV22200-AMP Amplifier Circuit
VDD = 50 V, IDS = 1.0 A, PAVE = 50 W, 1c WCDMA, PAR = 7.5 dB
40
-20
35
30
25
20
15
10
5
Drain Efficiency
-25
-30
-35
-40
Gain
Drain Efficiency
ACLR
Gain
ACLR
0
1.8
1.9
2.0
2.1
2.2
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGHV22200 Rev 2.0
Typical Performance
Figure 5. - CGHV22200 Spectral Mask at PAVE = 47 dBm with and without DPD
VDD=50, IDQ=1.0 A, Freq=2.14 GHz, 1 C WCDMA 7.5 PAR
0
-10
-20
-30
-40
-50
-60
-70
-80
Uncorrected
Corrected
2.125
2.13
2.135
2.14
2.145
2.15
2.155
Frequency (GHz)
Figure 6. - CGHV22200 Typical Linearity under DPD vs. Output Power
VDD=50, IDQ=1.0 A, Freq=2.14 GHz, 1 C WCDMA 7.5 PAR
35
30
25
20
15
10
5
5
Efficiency
Gain_UNCORR
Gain_CORR
EFF_UNCORR
EFF_CORR
-5
ACP_UNCORR
ACP_CORR
-15
-25
-35
-45
-55
-65
Gain
ACP Uncorrected
ACP Corrected
0
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
Average Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGHV22200 Rev 2.0
Typical Performance
Figure 7. - Intermodulation Distortion Products vs Output Power
Freq. = 2.1 GHz, VDD = 50 V, IDQ = 1.0 A, Tone Spacing = 100 kHz.
0
-10
-20
-30
-40
-50
-60
-70
-80
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Output Power (dBm)
Figure 8. - Power Dissipation Derating Curve
100
90
80
70
60
50
40
30
20
10
0
440161 Package
440162 Package
Note 1
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature ( C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGHV22200 Rev 2.0
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
10.6 - j7.3
8.1 - j7.4
6.1 - j6.6
Z Load
1800
1900
2000
2.7 + j0.6
2.8 + j0.7
2.9 + j0.8
2100
4.7 - j5.5
3.7 - j4.3
2.8 + j0.8
2.6 + j0.8
2200
Note1: VDD = 50 V, IDQ = 1.0 A. In the 440162 package.
Note2: Impedances are extracted from CGHV22200-AMP demonstration
circuit and are not source and load pull data derived from transistor.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGHV22200 Rev 2.0
CGHV22200-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 1/16 W, 0603, 1%, 10.0 OHMS
RES, 1/16 W, 0603, 1%, 5.1 OHMS
CAP, 470 pF, 5%, 100 V, 0603, X
CAP, 1.0 UF, 100 V, 10%, x7R, 121
CAP, 100 UF, 20%, 160 V, ELEC
CAP, 10 UF, 16 V, TANTALUM, 2312
CAP, 10.0 pF, 5%, 0603, ATC
CAP, 33000 pF, 0805, 100 V, X7R
CAP, 10 pF, 5%, 250 V, 0805, A
CONN, N, FEM, W/.500 SMA FLNG
HEADER RT>PLZ .1CEN LK 9POS
PCB, CGHV22200F, RO4350,0.020” THK
2-56 SOC HD SCREW 1/4 SS
#2 SPLIT LOCKWASHER SS
1
1
3
3
2
1
5
3
1
2
1
1
4
4
1
C4, C14, C24
C6,C16, C26
C17, C27
C7
C1, C2, C3, C13, C23
C5, C15, C25
C11
J1, J2
J3
CGHV22200
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGHV22200 Rev 2.0
CGHV22200-AMP Demonstration Amplifier Circuit Schematic
CGHV22200-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGHV22200 Rev 2.0
Product Dimensions CGHV22200F (Package Type — 440162)
Product Dimensions CGHV22200P (Package Type — 440161)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGHV22200 Rev 2.0
Part Number System
CGHV22200F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
2.2
200
GHz
W
-
Flange
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGHV22200 Rev 2.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV22200F
GaN HEMT
Each
CGHV22200P
CGHV22200-TB
CGHV22200F-AMP
GaN HEMT
Each
Each
Each
Test board without GaN HEMT
Test board with GaN HEMT installed
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
12
CGHV22200 Rev 2.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
13
CGHV22200 Rev 2.0
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