CGH40006S [CREE]

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, QFN-6;
CGH40006S
型号: CGH40006S
厂家: CREE, INC    CREE, INC
描述:

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, QFN-6

放大器 光电二极管 晶体管
文件: 总15页 (文件大小:1144K)
下载:  下载PDF数据表文档文件

CGH40006S-TB

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, 3 X 3 MM, PLASTIC, QFN-6

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0 CREE

CGH40006S-TR

6 W, RF Power GaN HEMT, Plastic

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0 CREE

CGH40010

10 W, RF Power GaN HEMT

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668 CREE

CGH40010_15

10 W, RF Power GaN HEMT

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1 CREE

CGH40010F-AMP

10 W, RF Power GaN HEMT

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7 CREE

CGH40010F-TB

10 W, RF Power GaN HEMT

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1 CREE

CGH40010P

10 W, RF Power GaN HEMT

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2 CREE

CGH40025

25 W, RF Power GaN HEMT

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5 CREE

CGH40025F

25 W, RF Power GaN HEMT

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246 CREE

CGH40025F-AMP

25 W, RF Power GaN HEMT

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0 CREE

CGH40025F-TB

25 W, RF Power GaN HEMT

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0 CREE

CGH40025P

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2

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0 CREE

CGH40035F

35 W, RF Power GaN HEMT

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4 CREE

CGH40035F-AMP

35 W, RF Power GaN HEMT

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0 CREE

CGH40035F-TB

35 W, RF Power GaN HEMT

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1 CREE