CGH25120F [CREE]
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE;
| 型号： | CGH25120F |
| 厂家： | 
CREE, INC |
| 描述： | 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE LTE |
| 文件： | 总12页 (文件大小：1699K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGH25120F
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
Cree’s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEM
designed specifically for high efficiency, high gain and wide bandwidth capabilitie
which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifie
applications. The transistor is supplied in a ceramic/metal flange package.
Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Units
Gain @ 43 dBm
12.5
12.8
13.1
13.5
13.6
dB
ACLR @ 43 dBm
Drain Efficiency @ 43 dBm
Note:
-32.7
26.5
-34.0
28.0
-32.5
30.0
-29.5
32.5
-25.8
34.5
dBc
%
Measured in the CGH25120F-AMP amplifier circuit, under equivalent 802.16e WiMAX signal, 10 MHz Bandwidth,
PAR = 9.6 dB @ 0.01 % Probability on CCDF.
Features
•
•
•
•
•
2.3 - 2.7 GHz Operation
13 dB Gain
-32 dBc ACLR at 20 W PAVE
30 % Efficiency at 20 W PAVE
High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
84
Units
Volts
Volts
Watts
˚C
Units
25˚C
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
VGS
-10, +2
56
PDISS
TSTG
Storage Temperature
-65, +150
225
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
T
˚C
J
IGMAX
IDMAX
TS
30
mA
A
25˚C
25˚C
12
245
˚C
80
in-oz
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Case Operating Temperature3
RθJC
1.5
85˚C
TC
-40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH25120F at PDISS = 56 W.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
28.0
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 28.8 mA
VDS = 28 V, ID = 0.5 A
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
23.2
120
–
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28.8 mA
VBR
–
VDC
RF Characteristics (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Saturated Output Power3,4,5
Pulsed Drain Efficiency3,5
Gain6
PSAT
–
–
130
60
–
–
W
%
VDD = 28 V, IDQ = 0.5 A,
η
VDD = 28 V, IDQ = 0.5 A, POUT = PSAT
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
G
ACLR
η
10.5
–
12.5
-31
32
–
dB
dBc
%
WiMAX Linearity6,7
Drain Efficiency6
-27
–
27
No damage at all phase angles, VDD = 28 V, IDQ
= 1.0 A, POUT = 20 W CW
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics
Input Capacitance8
CGS
CDS
CGD
–
–
–
88
12
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance8
Feedback Capacitance
1.6
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 40 μS, Duty Cycle = 5 %.
4 PSAT is defined as IG = 10 mA peak.
5 Measured in CGH25120F-AMP
6 Equivalent 802.16e WiMAX signal, 10 MHz Bandwidth, PAR = 9.6 dB @ 0.01% Probability on CCDF.
7 Measured over 10 MHz bandwidth at 10 MHz offset from carrier edge.
8 Includes package and internal matching components.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGH25120F Rev 3.1
Typical Performance
Gain and Input Return Loss vs Frequency of CGH25120F in Broadband Amplifier Circuit
VDD = 28 V, IDQ = 0.5 A
Typical Mobile WiMAX Digital Pre-Distortion (DPD) Performance
WiMAX Characteristics with and without DPD Correction
ACLR and Drain Efficiency vs Output Power
measured in CGH25120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 0.5 A, Frequency = 2.5 GHz
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGH25120F Rev 3.1
Typical Pulse Performance
Typical Pulse Characteristics Output Power, Drain Efficiency, and Gain vs Input Power
measured in CGH25120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 0.5 A, Freq = 2.5 GHz, Pulse Width = 40 μS, Duty Cycle = 5 %
Gain
Output Power
Efficiency
Typical Pulsed Saturated Power vs Frequency
measured in CGH25120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 0.5 A, PSAT = 10 mA IGS Peak, Pulse Width = 40 μS, Duty Cycle = 5 %
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGH25120F Rev 3.1
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH25120F
VDD = 28 V, IDQ = 500 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH25120F
VDD = 28 V, IDQ = 500 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
CDM
II (200 < 500 V)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGH25120F Rev 3.1
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
2300
2350
2400
2450
2500
2550
2600
6.80 - j12.19
6.42 - j11.89
6.05 - j11.61
5.71 - j11.34
5.37 - j11.08
5.04 - j10.83
4.71 - j10.57
4.38 - j1.42
4.39 - j1.36
4.39 - j1.33
4.36 - j1.32
4.31 - j1.33
4.23 - j1.34
4.11 - j1.36
2650
2700
4.39 - j10.31
4.07 - j10.04
3.98 - j1.37
3.80 - j1.36
Note1: VDD = 28V, IDQ = 500mA. In the 440162 package.
Note2: Impedances are extracted from CGH25120F-AMP demonstration circuit
and are not source and load pull data derived from transistor.
CGH25120F Power Dissipation De-rating Curve
70
60
50
40
30
20
10
0
Note 1
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGH25120F Rev 3.1
CGH25120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16 W, 0603, 1%, 150 OHMS
RES, 1/16 W, 0603, 1%, 5.1 OHMS
CAP, 6.8 pF, +/-0.25 pF, 0603, ATC600S
CAP, 27 pF, +/-5%, 0603, ATC600S
CAP, 8.2 pF, +/-0.25 pF, 0603, ATC600S
CAP, 82.0 pF, +/-5%, 0603, ATC600S
CAP, 470 pF, 5%, 100V, 0603, X7R
CAP, 33000 pF, 0805, 100V, X7R
CAP, 10 UF, 16V, TANTALUM
1
1
1
1
3
2
2
3
1
1
2
1
2
1
1
1
R2
C1
C2
C3,C9,C15
C4,C10
C5,C11
C6,C12,C16
C7
C8
CAP, 24 pF, +/-5%, 0603, ATC600S
CAP, 1.0 UF, 100V, 10%, X7R, 1210
CAP, 100 UF, +/-20%, 160V, ELECTROLYTIC
CONN, N-Type, Female, 0.500 SMA Flange
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
PCB, RO4350, Er = 3.48, h = 20 mil
CGH25120F
C13,C17
C14
J1,J2
J3
-
-
CGH25120F-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGH25120F Rev 3.1
CGH25120F-AMP Demonstration Amplifier Circuit Schematic
CGH25120F-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGH25120F Rev 3.1
Typical Package S-Parameters for CGH25120
(Small Signal, VDS = 28 V, IDQ = 500 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.2 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
6.0 GHz
0.970
0.969
0.969
0.968
0.967
0.965
0.963
0.961
0.957
0.953
0.948
0.941
0.932
0.921
0.906
0.887
0.863
0.836
0.807
0.782
0.767
0.765
0.772
0.784
0.795
0.802
0.800
0.786
0.824
0.913
0.963
0.983
0.992
0.995
0.997
0.998
0.999
0.999
0.999
0.999
1.000
179.55
178.04
176.68
175.39
174.12
172.86
171.57
170.24
168.86
167.39
165.84
164.19
162.42
160.54
158.55
156.51
154.51
152.72
151.32
150.41
149.70
148.57
146.34
142.57
137.00
129.35
105.38
62.35
3.23
2.71
2.35
2.08
1.88
1.73
1.62
1.53
1.47
1.43
1.41
1.40
1.41
1.44
1.49
1.54
1.61
1.68
1.73
1.76
1.74
1.69
1.61
1.52
1.43
1.37
1.29
1.25
1.08
0.73
0.45
0.29
0.19
0.14
0.10
0.08
0.07
0.06
0.05
0.04
0.04
65.19
59.73
54.43
49.24
44.13
39.07
34.02
28.94
23.78
18.47
12.95
7.11
0.006
0.006
0.006
0.006
0.006
0.006
0.007
0.007
0.007
0.007
0.007
0.008
0.008
0.009
0.009
0.010
0.011
0.012
0.012
0.013
0.013
0.013
0.012
0.012
0.012
0.011
0.011
0.011
0.010
0.007
0.005
0.003
0.002
0.002
0.002
0.001
0.001
0.001
0.001
0.001
0.001
-19.55
-23.92
-28.13
-32.20
-36.17
-40.07
-43.93
-47.79
-51.71
-55.72
-59.92
-64.38
-69.21
-74.56
-80.57
-87.43
-95.34
-104.43
-114.71
-125.92
-137.58
-149.05
-159.82
-169.67
-178.68
172.84
155.52
133.38
103.76
76.68
0.697
0.712
0.728
0.744
0.760
0.776
0.792
0.808
0.823
0.838
0.853
0.868
0.882
0.897
0.912
0.928
0.943
0.956
0.966
0.970
0.968
0.960
0.948
0.937
0.926
0.918
0.907
0.901
0.897
0.890
0.881
0.872
0.860
0.844
0.823
0.793
0.751
0.688
0.594
0.453
0.251
-171.85
-171.11
-170.54
-170.15
-169.90
-169.80
-169.82
-169.93
-170.13
-170.41
-170.74
-171.14
-171.61
-172.16
-172.82
-173.62
-174.61
-175.83
-177.27
-178.85
179.58
178.22
177.17
176.41
175.88
175.48
174.80
174.02
172.96
171.72
170.41
168.93
167.19
165.11
162.61
159.54
155.74
150.96
145.02
138.33
136.18
0.85
-5.98
-13.54
-22.02
-31.62
-42.48
-54.61
-67.78
-81.50
-95.15
-108.22
-120.49
-132.07
-143.26
-166.46
164.88
128.15
93.46
69.63
53.87
42.45
33.27
25.19
17.50
9.61
-2.68
-61.31
-96.70
60.78
-116.99
-129.53
-137.94
-143.97
-148.50
-152.04
-154.90
-157.26
-159.26
-160.97
53.02
49.41
47.62
46.36
44.82
42.41
0.93
38.57
-9.20
32.67
-21.62
-36.99
23.98
11.87
To download the s-parameters in s2p format, go to the CGH25120F Product Page and click on the documentation tab.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGH25120F Rev 3.1
Product Dimensions CGH25120F (Package Type — 440162)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGH25120F Rev 3.1
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGH25120F
GaN HEMT
Each
CGH25120F-TB
Test board without GaN HEMT
Each
CGH25120F-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGH25120F Rev 3.1
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
12
CGH25120F Rev 3.1
相关型号：
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