CG2H80030D [CREE]
30 W, 8.0 GHz, GaN HEMT Die;
| 型号： | CG2H80030D |
| 厂家： | 
CREE, INC |
| 描述： | 30 W, 8.0 GHz, GaN HEMT Die |
| 文件： | 总5页 (文件大小：824K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CG2H80030D
30 W, 8.0 GHz, GaN HEMT Die
Cree’s CG2H80030D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT), based on Cree’s 28V, 0.25um GaN-on-SiC process
technology. GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated electron
drift velocity, and higher thermal conductivity. GaN HEMTs offer greater
power densityand wider bandwidths compared to Si and GaAs transistors.
FEATURES
APPLICATIONS
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17 dB Typical Small Signal Gain at 4 GHz
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2-Way Private Radio
12 dB Typical Small Signal Gain at 8 GHz
30 W Typical PSAT
Broadband Amplifiers
Cellular Infrastructure
28 V Operation
Test Instrumentation
High Breakdown Voltage
High Temperature Operation
Up to 8 GHz Operation
High Efficiency
Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Packaging Information
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Bare die are shipped in Gel-Pak® containers.
Non-adhesive tacky membrane immobilizes die during shipment.
Subject to change without notice.
www.cree.com/RF
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
VDSS
Rating
84
Units
VDC
VDC
˚C
Conditions
25˚C
Drain-source Voltage
Gate-source Voltage
VGS
-10, +2
-65, +150
225
25˚C
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
T
˚C
J
IGMAX
IDMAX
RθJC
RθJC
TS
7.0
mA
A
25˚C
25˚C
3.0
Thermal Resistance, Junction to Case (packaged)2
Thermal Resistance, Junction to Case (die only)
Mounting Temperature (30 seconds)
4.9
˚C/W
˚C/W
˚C
85°C, 28.8W Dissipation
85°C, 28.8W Dissipation
30 seconds
2.74
320
Note1 Current limit for long term, reliable operation
Note2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier.
Electrical Characteristics (Frequency = 4 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
VGS(TH)
VGS(Q)
VBD
-3.6
–
-3.0
-2.7
–
–2.4
–
V
VDC
V
VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
VDD = 28 V, IDQ = 200 mA
VGS = -8 V, ID = 7.2 mA
VDS = 0.1 V
Drain-Source Breakdown Voltage
120
0.26
–
On Resistance
RON
0.33
0.41
Ω
RF Characteristics
Small Signal Gain
GSS
PSAT
η
–
–
–
17
30
65
–
–
–
dB
W
%
VDD = 28 V, IDQ = 200 mA
Saturated Power Output1
VDD = 28 V, IDQ = 200 mA
Drain Efficiency2
VDD = 28 V, IDQ = 200 mA, PSAT = 30 W
No damage at all phase angles,
VDD = 28 V, IDQ = 200 mA,
POUT = 30 W CW
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
Dynamic Characteristics
Input Capacitance
CGS
CDS
CGD
–
–
–
7.3
2.2
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
0.37
Notes:
1 PSAT is defined as IG = 0.7 mA.
2 Drain Efficiency = POUT / PDC.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/RF
2
CG2H80030D Rev 1.0
DIE Dimensions (units in microns)
Overall die size 1660 x 920 (+0/-50) microns, die thickness 100 (+/- 10) microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Assembly Notes:
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Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at
www.cree.com/RF/Document-Library
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Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/RF
3
CG2H80030D Rev 1.0
Typical Performance
Simulated Maximum Available Gain and K Factor of the CG2H80030D
VDD = 28 V, IDQ = 200 mA
Intrinsic die parameters - reference planes at centers of gate and drain bonding pads. No wire bonds assumed.
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CG2H80030D
VDD = 28 V, IDQ = 200 mA
Cree, Inc.
4600 Silicon Drive
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/RF
4
CG2H80030D Rev 1.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Marketing & Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/RF
5
CG2H80030D Rev 1.0
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