CAB450M12XM3 [CREE]

1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module;


型号：	CAB450M12XM3
厂家：	CREE, INC
描述：	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module
文件：	总9页 (文件大小：893K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V_DS

I_DS

1200 V

450 A

CAB450M12XM3

1200V, 450A All-Silicon Carbide

Conduction Optimized, Half-Bridge Module

Technical Features

Package 80 x 53 x 19 mm

•

High Power Density Footprint

High Junction Temperature (175 °C) Operation

Low Inductance (6.7 nH) Design

Implements Conduction Optimized Third

Generation SiC MOSFET Technology

Silicon Nitride Insulator and Copper Baseplate

V+

•

Mid

Applications

NTC2

NTC1

NTC

•

Motor & Traction Drives

Vehicle Fast Chargers

Uninterruptable Power Supplies

Smart-Grid / Grid-Tied Distributed Generation

V-

System Benefits

•

Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,

low inductance design.

•

Isolated integrated temperature sensing enables high-level temperature protection.

Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.

Key Parameters (T_C= 25˚C unless otherwise specified)

Symbol Parameter

Min.

Typ.

Max.

1200

+19

Unit

Test Conditions

Note

V_{DS max}Drain-Source Voltage

V_{GS max}Gate-Source Voltage, Maximum Value

Note 1

-4

AC frequency ≥ 1Hz.

Static

Gate-Source Voltage, Recommended

Op. Value

V_{GS op}

+15

450

V_GS= 15 V, T_C= 25 ˚C, T_VJ≤ 175 ˚C Fig. 20

I_DS

I_SD

DC Continuous Drain Current

Note 2

409

225

V_GS= 15 V, T_C= 90 ˚C, T_VJ≤ 175 ˚C

V_GS= 15 V, T_C= 25 ˚C, T_VJ≤ 175 ˚C

V_GS= - 4 V, T_C= 25 ˚C, T_VJ≤ 175 ˚C

DC Source-Drain Current

450

I_{SD BD}DC Source-Drain Current (Body Diode)

I_{DS (pulsed)}Maximum Pulsed Drain-Source Current

I_{SD (pulsed)}Maximum Pulsed Source-Drain Current

900

t_Pmaxlimited by T_jmax

V_GS= 15 V, T_C= 25 ˚C

Maximum Virtual Junction

T_{VJ op}Temperature under Switching

Conditions

-40

175

°C

Note 1 If MOSFET body diode is not used, V_{GS max}= -8/+19 V

Note 2 Assumes R_{TH JC}= 0.11°C/W and R_DS(on)= 4.6 mΩ. Calculate P_D= (T_VJ– T_C) / R_{TH JC}. Calculate I_{D_MAX}= √(P_D/ R_DS(on)

)

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

MOSFET Characteristics (Per Position) (T_C= 25˚C unless otherwise specified)

Symbol Parameter

Min.

1200

1.8

Typ. Max. Unit

Test Conditions

V_GS= 0 V, I_D= 200 μA

Note

V_(BR)DSSDrain-Source Breakdown Voltage

2.5

2.0

3.6

V_DS= V_GS, I_D= 132 mA

V_GS(th)Gate Threshold Voltage

V_DS= V_GS, I_D= 132 mA, T_J= 175 °C

V_GS= 0 V, V_DS= 1200 V

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

200

1.3

3.7

μA

0.05

V_GS= 15 V, V_DS= 0 V

2.6

4.6

V_GS= 15 V, I_D= 450 A

Drain-Source On-State Resistance (Devices

Only)

Fig. 2

Fig. 3

R_DS(on)

mΩ

V_GS= 15 V, I_D= 450 A, T_J= 175 °C

V_DS= 20 V, I_DS= 450 A

355

g_fs

Transconductance

Fig. 4

360

V_DS= 20 V, I_DS= 450 A, T_J= 175 °C

Turn-On Switching Energy, T_J= 25 °C

T_J= 125 °C

T_J= 175 °C

11.0

11.7

13.0

V_DS= 600 V,

I_D= 450A,

mJ V_GS= -4 V/15 V,

R_G(ext)= 0.0 Ω,

E_On

Fig. 11

Fig. 13

Turn-Oﬀ Switching Energy, T_J= 25 °C

T_J= 125 °C

T_J= 175 °C

10.1

11.3

12.1

E_Oﬀ

L= 13.6 μH

R_G(int)Internal Gate Resistance

2.5

38.0

1.5

C_iss

C_oss

C_rss

Q_GS

Q_GD

Q_G

Input Capacitance

V_GS= 0 V, V_DS= 800 V,

Output Capacitance

Reverse Transfer Capacitance

Gate to Source Charge

Gate to Drain Charge

Total Gate Charge

Fig. 9

V_AC= 25 mV, f = 100 kHz

355

500

1330

V_DS= 800 V, V_GS= -4 V/15 V

nC I_D= 450 A

Per IEC60747-8-4 pg 21

R_{th JC}

FET Thermal Resistance, Junction to Case

0.11 0.13 °C/W

Fig. 17

Body Diode Characteristics (Per Position) (T_C= 25˚C unless otherwise specified)

Symbol Parameter

Min.

Typ.

4.7

Max. Unit

Test Conditions

Note

V_GS= -4 V, I_SD= 450 A

V_SD

Body Diode Forward Voltage

Fig. 7

4.2

V_GS= -4 V, I_SD= 450 A, T = 175 °C

t_rr

Q_rr

I_rr

Reverse Recovery Time

6.6

195

μC

V_GS= -4 V, I_SD= 450 A, V_R= 600 V

Reverse Recovery Charge

Peak Reverse Recovery Current

di/dt = 8 A/ns, T = 175 °C

Reverse Recovery Energy T_J= 25 °C

T_J= 125 °C

T_J= 175 °C

0.2

1.1

1.9

V_DS= 600 V, I_D= 450A,

mJ V_GS= -4 V/15 V, R_G(ext)= 0.0 Ω,

E_rr

Fig. 14

L= 13.6 μH

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

Temperature Sensor (NTC) Characteristics

Symbol Parameter

Min.

Typ.

Max.

Unit

kΩ

Test Conditions

R₂₅

∆R/R Tolerance of R₂₅

P₂₅Maximum Power Dissipation

Rated Resistance

4.7

T_NTC= 25 °C

Steinhart-Hart Modified Coeﬀicients for R/T Computation:

T_NTC< 25 °C

T_NTC≥ 25 °C

3.3540E-03

3.0013E-04

5.0852E-06

2.1877E-07

Module Physical Characteristics

Symbol Parameter

Min.

Typ.

0.72

0.63

6.7

Max.

Unit

Test Conditions

R_3-1

R_1-2

L_Stray

T_C

Package Resistance, M1

Package Resistance, M2

Stray Inductance

Case Temperature

Weight

T_C= 125 °C, Note₁3

T_C= 125 °C, Note 3

mΩ

°C

Between Terminals 2 and 3

-40

125

175

3.0

4.0

2.0

4.0

5.0

Baseplate, M4 bolts

Power Terminals, M5 bolts

AC, 50 Hz, 1 min

M_S

Mounting Torque

N-m

V_isol

CTI

Case Isolation Voltage

4.0

Comparative Tracking Index

600

12.5

11.5

5.7

From 2 to 3, Note₂4

From 1 to Baseplate, Note 4

From 2 to 5, Note 4

Clearance Distance

Creepage Distance

13.7

14.7

14.0

14.7

14.3

From 5 to Baseplate, Note 4

From 2 to 3, Note 4

From 1 to Baseplate, Note 4

From 2 to 5, Note 4

From 5 to Baseplate, Note 4

Note₁3 Total Eﬀective Resistance (Per Switch Position) = MOSFET R_DS(on)+ Switch Position Package Resistance.

Note₂4 Numbers reference the connections from the Schematic and Package Dimensions sections of this document.

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

Typical Performance

900

2.0

1.8

1.6

1.4

1.2

1.0

0.8

Conditions:

tp < 300 μs

V_GS= 15 V

Conditions:

tp < 300 μs

V_GS= 15 V

175 °C

150 °C

800

700

600

500

400

300

200

100

25 °C

-40 °C

125 °C

100 °C

125 °C

150 °C

175 °C

-40 °C

25 °C

0.0

1.0

2.0

3.0

4.0

5.0

100

200

300

400

500

600

700

800

900

Drain-Source Voltage, V_DS(V)

Drain-Source Current, I_DS(A)

Figure 1. Output Characteristics for Various Junction

Temperatures

Figure 2. Normalized On-State Resistance vs. Drain Current for Various

Juction Temperatures

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

700

Conditions:

tp < 300 μs

V_GS= 15 V

I_D= 450 A

Conditions:

tp < 300 μs

V_DS= 20 V

600

175 °C

500

400

150 °C

125 °C

100 °C

300

200

100

25 °C

0 °C

-25 °C

-40 °C

-50

100

150

200

0.0

2.0

4.0

6.0

8.0

10.0

Virtual Junction Temperature, T_VJ(°C)

Gate-Source Voltage, V_GS(V)

Figure 3. Normalized On-State Resistance vs.

Juction Temperature

Figure 4. Transfer Characteristic for Various Junction

Temperatures

900

800

700

600

500

400

300

200

100

900

800

700

600

500

400

300

200

100

Conditions:

tp < 300 μs

V_GS= 15 V

Conditions:

tp < 300 μs

V_GS= 0.0 V

175 °C

150 °C

125 °C

100 °C

25 °C

-40 °C

25 °C

0 °C

-25 °C

-40 °C

100 °C

125 °C

150 °C

175 °C

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

Source-Drain Voltage, V_SD(V)

Figure 5. 3^rdQuadrant Characteristic vs. Junction Temperatures atV_GS= 15

Figure 6. 3^rdQuadrant Characteristic vs. Junction Temperatures atV_GS= 0

V (Body Diode)

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

Typical Performance

900

1,000.00

100.00

10.00

1.00

T_J= 25 °C

V_AC= 25 mV

f = 100 kHz

Conditions:

800 tp < 300 μs

V_GS= - 4.0 V

700

C_iss

600

500

400

300

200

100

175 °C

150 °C

125 °C

100 °C

C_oss

25 °C

0 °C

-25 °C

-40 °C

0.10

C_rss

0.01

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

100

150

200

Source-Drain Voltage, V_SD(V)

Drain-Source Voltage, V_DS(V)

Figure 7. 3^rdQuadrant Characteristic vs. Junction Temperatures at

V_GS= - 4 V (Body Diode)

Figure 8. Typical Capacitances vs. Drain to Source Voltage

(0 - 200V)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1,000.00

T_J= 25 °C

V_AC= 25 mV

f = 100 kHz

Conditions:

V_GS= V_DS

_DS= 132 mA

100.00

C_iss

10.00

C_oss

1.00

0.10

C_rss

0.01

-50

100

150

200

400

600

800

1,000

1,200

Junction Temperature, T_J(°C)

Drain-Source Voltage, V_DS(V)

Figure 9. Typical Capacitances vs. Drain to Source Voltage

(0 - 1200V)

Figure 10. Threshold Voltage vs. Junction Temperature

Conditions:

T_VJ= 25 °C

V_DS= 600 V

R_G(ext)= 0.0 Ω

V_GS= -4/+15 V

L = 13.6 µH

Conditions:

T_VJ= 25 °C

V_DS= 800 V

R_G(ext)= 0.0 Ω

V_GS= -4/+15 V

L = 13.6 µH

E_{On +}E_Off

E_Off

E_On

E_Off

E_On

E_RR

1000

E_RR

200

400

600

800

200

400

600

800

1000

Drain-Source Current, I_DS(A)

Figure 11. Switching Energy vs. Drain Current

(V_DS= 600 V)

Figure 12. Switching Energy vs. Drain Current

(V_DS= 800 V)

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

Typical Performance

2.5

2.0

1.5

1.0

0.5

0.0

Conditions:

I_DS= 450 A, V_DD=600 V

R_G(ext)= 0.0 Ω, V_GS= -4/+15 V

L = 13.6 µH

Conditions:

_DS= 450 A,

R_G(ext)= 0.0 Ω,

V_GS= -4/+15 V

L = 13.6 µH

E_RR(V_DD= 800 V)

E_{On +}E_Off

E_RR(V_DD= 600 V)

E_On

E_Off

100

150

200

100

150

200

Junction Temperature, T_VJ(°C)

Figure 13. MOSFET Switching Energy vs. Junction Temperature

Figure 14. Reverse Recovery Energy vs. Junction Temperature

0.25

Conditions:

I_DS= 450 A, V_DD=600 V

T_JV= 25 °C, V_GS= -4/+15 V

L = 13.6 µH

I_DS= 450 A, V_DD= 600 V

T_VJ= 25°C, V_GS= -4/+15 V

L = 13.6 µH

E_{On +}E_Off

0.20

0.15

0.10

0.05

0.00

E_On

E_Off

E_RR

External Gate Resistor, R_G(ext)(Ω)

Figure 15. MOSFET Switching Energy vs. External Gate Resistance

Figure 16. Reserve Recovery Energy vs. External Gate Resistance

Figure 17. MOSFET Juction to Case Transient Thermal Impedance,

Z_{th JC}(°C/W)

Figure 18. Forward Bias Safe Operating Area (FBSOA)

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

Typical Performance

1000

900

800

Chip

700

600

500

400

300

200

100

Module

Conditions:

T_VJ= 175 °C

R_G(ext)= 0.0 Ω

L_Stray-system= 6.0 nH

L_Stray-module= 6.7 nH

200

400

600

800

1000

1200

Drain-Source Voltage, V_DS(V)

Figure 20. Continuous Drain Current Derating vs.

Case Temperature

Figure 19. Reverse Bias Safe Operating Area (RBSOA)

600

500

400

300

200

100

V_DS= 800 V

T_C= 90 °C

T_VJ= 175 °C

R_G(ext)= 0.0 Ω

MF = 1

Switching Frequency, F_S(kHz)

Figure 21. Maximum Power Dissipation Derating vs.

Case Temperature

Figure 22. Typical Ouput Current Capablity vs. Switching Frequency

(Inverter Application)

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

Schematic and Pin Out

8,9

NTC

Package Dimmension (mm)

53.00 ±0.20

44.75 ±0.20

15.75 ±0.30

12.50 ±0.30

4.50 ±0.20

29.50 ±0.20

44.00 ±0.30

2.54

0.64

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

Package Dimmension (mm)

Power Terminal Screw

Maximum Penetration Depth

Maximum

Penetration

Depth [mm]

DETAIL

SCALE 4 : 1

SECTION ^E-E

Supporting Links & Tools

• CGD12HBXMP: XM3 Evaluation Gate Driver

• CGD12HB00D: Diﬀerential Transceiver Board for CGD12HBXMP

• CRD300DA12E-XM3: 300 kW Inverter Kit for Conduction-Optimized XM3 (CPWR-AN30)

• KIT-CRD-CIL12N-XM3: Dynamic Performance Evaluation Board for the XM3 Module (CPWR-AN31)

• CPWR-AN28: Module Mounting Application Note

• CPWR-AN29: Thermal Interface Material Application Note

Notes

•

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human

body nor in applications in which failure of the product could lead to death, personal injury or property damage, including

but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar

emergency medical equipment, aircraꢀ navigation or communication or control systems, or air traﬀic control systems.

•

The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special

precautions are required to realize optimal performance. The interconnection between the gate driver and module housing

needs to be as short as possible. This will aﬀord optimal switching time and avoid the potential for device oscillation. Also, great

care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

are registered trademarks of Cree, Inc.

CAB450M12XM3 [CREE]

相关型号：

CAB4A

CAB4AZNRR

CAB600-4

CAB600-8

CAB600-BD8

CAB610

CAB610-XL

CAB616

CAB618C

CAB622

CAB628

CAB632