C505RT230-0200 [CREE]

Optoelectronic Device;


型号：	C505RT230-0200
厂家：	CREE, INC
描述：	Optoelectronic Device
文件：	总4页 (文件大小：179K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

•

G SiC Technology

RazerThin^™LEDs

CxxxRT230-S0200

Features

Applications

• Small chip – 200 x 200 x 85 µm

• Low Forward Voltage

• Mobile Phone Keypads

• Audio Product Display Lighting

• Mobile Appliance Keypads

– 3.1V Typical at 20mA Blue (455-475nm)

– 3.1V Typical at 20mA Traffic Green (500-510nm)

– 3.2V Typical at 20mA Green (520-535nm)

• RT230™ Performance

– 2.0 mW min Blue (455-475nm)

– 1.5mW min Green (520-535nm and 500-510nm)

• Single Wire Bond Structure

• Class II ESD Rating

Description

Cree's RazerThin^™LEDs combine highly efficient InGaN materials with Cree's proprietary G•SiC® substrate to

deliver superior price performance for blue LEDs. These vertically structured LED chips are small in size and

require a low forward voltage. Cree's RT series chips are tested for conformity to optical and electrical

specifications and the ability to withstand 1000V ESD. Applications include keypad backlighting where sub-

miniaturization and thinner form factors are required.

CxxxRT230-S0200 Chip Diagram

Top View

Bottom View

Side View

Anode (+)

InGaN

G·SiC ® LED Chip

200 x 200 µm

h = 85 µm

SiC Substrate

Mesa (junction)

180 x 180 µm

Backside

Metallization

Cathode (-)

80 x 80 µm

Gold Bond Pad

105 µm Diameter

CPR3CO Rev. -

•

G SiC Technology

RazerThin^™LEDs

CxxxRT230-S0200

Maximum Ratings at T_A= 25°C ^{Notes 1&3}

DC Forward Current

CxxxRT230-S0200

30 mA

Peak Forward Current (1/10 duty cycle @ 1kHz)

LED Junction Temperature

100 mA

125°C

Reverse Voltage

5 V

Operating Temperature Range

-40°C to +100°C

1000V

Storage Temperature Range

Electrostatic Discharge Threshold (HBM) ^{Note 2}

Electrostatic Discharge Classification (MIL-STD-883E) ^{Note 2}

Class 2

Typical Electrical/Optical Characteristics at T_A= 25°C, If = 20mA^{Note 3}

Full Width Half Max

Sorted Kit

Part number

Forward Voltage

(V_f,V)

Reverse Current

[I(Vr=5V), µA]

(λ_D,nm)

Min.

Typ

Max

typ

C460RT230-S0200

2.7

3.1

3.2

3.7

C470RT230-S0200

C505RT230-S0200

C527RT230-S0200

Mechanical Specifications

Description

CxxxRT230-S0200

Dimension

180 x 180

200 x 200

105

1.2

80 x 80

Tolerance

±25

P-N Junction Area (µm)

Top Area (µm)

±25

±10

-5, +15

±0.5

Bottom Area (µm)

Chip Thickness (µm)

Au Bond Pad Diameter (µm)

Au Bond Pad Thickness (µm)

Back Contact Metal Area (µm)

±25

Notes:

1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings

for other packages may differ. The forward currents (DC and Peak) are not limited by the die bRT by the effect of the LED junction temperature on the package.

The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine

limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).

2) Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The

RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of

Class II is based on sample testing according to MIL-STD 883E.

3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within

the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by

manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000

epoxy). Optical characteristics measured in an integrating sphere using Illuminance E.

4) Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific application.

5) Specifications are subject to change without notice.

CPR3CO Rev. -

•

G SiC Technology

RazerThin^™LEDs

CxxxRT230-S0200

Standard Bins for CxxxRT230-S0200:

LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin.

Sorted die kit (CxxxRT230-S0200) orders may be filled with any or all bins (CxxxRT230-0xxx) contained in the kit. All radiant flux

values are measured at If = 20mA and all dominant wavelength values are measured at If = 20mA.

C460RT230-S0200

6.0 mW

C460RT230-0203

C460RT230-0201

C460RT230-0204

C460RT230-0202

4.0 mW

2.0 mW

455nm

460nm

465nm

Dominant Wavelength

C470RT230-S0200

6.0 mW

C470RT230-0203

C470RT230-0204

C470RT230-0202

4.0 mW

2.0 mW

C470RT230-0201

465nm

470nm

475nm

Dominant Wavelength

C505RT230-S0200

6.0 mW

4.0 mW

C505RT230-0205

C505RT230-0206

C505RT230-0204

C505RT230-0202

C505RT230-0203

C505RT230-0201

2.5 mW

1.5 mW

500nm

505nm

510nm

Dominant Wavelength

C527RT230-S0200

4.0 mW

C527RT230-0204

C527RT230-0201

C527RT230-0205

C527RT230-0202

C527RT230-0206

C527RT230-0203

2.5 mW

1.5 mW

520nm

525nm

530nm

535nm

Dominant Wavelength

CPR3CO Rev. -

•

G SiC Technology

RazerThin^™LEDs

CxxxRT230-S0200

Characteristic Curves:

These are representative measurements for the RT230 product. Actual curves will vary slightly for the various radiant flux and

dominant wavelength bins.

Forward Current vs Forward Voltage

Wavelength Shift vs Forward Current

20.0

527nm

505nm

16.0

470nm

12.0

8.0

4.0

0.0

-4.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Vf (V)

If (mA)

Relative Intensity vs. Peak W avelength

Relative Intensity vs Forward Voltage

100

140

120

100

460 nm

505 nm

527 nm

350

400

450

500

550

600

650

If (mA)

W avelength (nm)

CPR3CO Rev. -

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