C4D08120A_14 [CREE]

Silicon Carbide Schottky Diode;


型号：	C4D08120A_14
厂家：	CREE, INC
描述：	Silicon Carbide Schottky Diode
文件：	总6页 (文件大小：714K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

C4D08120A

V_RRMꢀꢀꢀꢀꢀꢀ=ꢀꢀ ꢀ1200ꢀVꢀ

I_F(T_C=135˚C) = 11 A

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ ꢀꢀꢀ37ꢀnC

Silicon Carbide Schottky Diode

Z-Rec^®RectifieR

Features

Package

•ꢀ 1.2kVꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitching

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

ꢀꢀꢀꢀꢀꢀTO-220-2

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

•ꢀ SolarꢀInvertersꢀ

•ꢀ UPS

ꢀ

C4D08120A

TO-220-2

C4D08120

•ꢀ MotorꢀDrives

Maximum Ratings (T_C=25°Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

V_RRM

Parameter

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀPeakꢀReverseꢀVoltage

Value Unit

Test Conditions

Note

1200

1300

1200

V_RSM

V_R

T_C=25˚C

T_C=135˚C

T_C=153˚C

I_F

ContinuousꢀForwardꢀCurrentꢀꢀꢀꢀꢀꢀꢀ

37.5

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

I_FRM

I_FSM

I_F,Max

P_tot

T_J

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀCurrent

PowerꢀDissipation

49.5

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

600

480

T_C=25˚C,ꢀt_P=10ꢀms,ꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀPulse

120

T_C=25˚C

T_C=110˚C

˚C

-55 to

+175

OperatingꢀJunctionꢀRange

-55 to

+135

T_stg

StorageꢀTemperatureꢀRange

TO-220ꢀMountingꢀTorque

˚C

8.8

M3ꢀScrew

lbf-in 6-32ꢀScrew

C4D08120A Rev. A

Electrical Characteristics

Symbol Parameter

Typ.

Max.

Unit

Test Conditions

I_F= 8 A T_J=25°C

Note

1.5

2.2

1.8

V_F

ForwardꢀVoltage

ReverseꢀCurrent

I_F= 8 A T_J=175°C

100

250

350

V_Rꢀ=ꢀ1200ꢀVꢀꢀT_J=25°C

V_Rꢀ=ꢀ1200ꢀVꢀꢀT_J=175°C

I_R

μA

V_Rꢀ=ꢀ800ꢀV,ꢀI_F= 8 A

di/dtꢀ=ꢀ200ꢀA/μs

T_Jꢀ=ꢀ25°C

Q_C

TotalꢀCapacitiveꢀCharge

TotalꢀCapacitance

560

V_Rꢀ=ꢀ0ꢀV,ꢀT_Jꢀ=ꢀ25°C,ꢀfꢀ=ꢀ1ꢀMHz

V_Rꢀ=ꢀ400ꢀV,ꢀT_Jꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz

V_Rꢀ=ꢀ800ꢀV,ꢀT_Jꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz

1.ꢀNote:Thisꢀisꢀaꢀmajorityꢀcarrierꢀdiode,ꢀsoꢀthereꢀisꢀnoꢀreverseꢀrecoveryꢀcharge.

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

ThermalꢀResistanceꢀfromꢀJunctionꢀ

toꢀCase

R_θJC

1.26

°C/W

Typical Performance

800

700

600

500

400

300

200

100

T_J=-55°C

T_J=ꢀ25°C

T_J=ꢀ75°C

T_Jꢀ=125°C

T_Jꢀ=175°C

T_J=-55°C

T_J=ꢀ25°C

T_J=ꢀ75°C

T_Jꢀ=125°C

T_Jꢀ=175°C

500

1000

1500

2000

0.5

1.5

2.5

3.5

V_F(V)

V_R(V)

Figureꢀ1.ꢀForwardꢀCharacteristics

Figureꢀ2.ꢀReverseꢀCharacteristics

C4D08120A Rev. A

Typical Performance

140

120

100

10%ꢀDuty

ꢀꢀ20%ꢀDuty

ꢀꢀ30%ꢀDuty

ꢀꢀ50%ꢀDuty

ꢀꢀ70%ꢀDuty

ꢀꢀDC

100

125

150

175

100

125

150

175

T_C˚C

Figureꢀ4.ꢀPowerꢀDerating

Figureꢀ3.ꢀCurrentꢀDerating

600

500

400

300

200

100

0.1

100

1000

200

400

600

800

1000

V_R(V)

ꢀꢀꢀꢀꢀꢀFigureꢀ5.ꢀRecoveryꢀChargeꢀvs.ꢀReverseꢀVoltageꢀ

ꢀ

Figureꢀ6.ꢀCapacitanceꢀvs.ꢀReverseꢀVoltage

C4D08120A Rev. A

Typical Performance

1000

20.0

18.0

16.0

14.0

12.0

100

10.0

T_J=ꢀ25°C

8.0

T_Jꢀ=ꢀ110°C

6.0

4.0

2.0

0.0

ꢀꢀꢀ0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ200ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ400ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ600ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ800ꢀꢀꢀꢀꢀꢀꢀꢀꢀ1000

ꢀꢀꢀ1E-05ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-04ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-03ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-02

1.E-05 1.E-02

1.E-04

1.E-03

200

400

600

800

1000

V_RReverse Voltage (V)

tp(s)

t_p(s)

V_R(V)

Figureꢀ8.ꢀNon-repetitiveꢀpeakꢀforwardꢀsurgeꢀcurrentꢀ

versusꢀpulseꢀdurationꢀ(sinusoidalꢀwaveform)

Figureꢀ7.ꢀTypicalꢀCapacitanceꢀStoredꢀEnergy

0.5

0.3

0.1

0.05

100E-3

0.02

SinglePulse

0.01

10E-3

1E-3

1E-6

10E-6

100E-6

1E-3

Time, t (s)

10E-3

100E-3

T (S_pec)

Figureꢀ9.ꢀTransientꢀThermalꢀImpedance

C4D08120A Rev. A

Package Dimensions

Inches

Millimeters

Min

PackageꢀTO-220-2

POS

Min

.381

.235

.100

.223

.590

.143

Max

.410

.255

.120

.337

.615

.153

1.147

.550

Max

10.414

6.477

3.048

8.560

15.621

3.886

29.134

13.970

9.677

5.969

2.540

5.664

14.986

3.632

28.067

12.700

1.105

.500

Rꢀ0.197

1 2

.025

.045

.195

.165

.048

3°

.036

.055

.205

.185

.054

6°

.635

1.143

4.953

4.191

1.219

3°

.914

1.397

5.207

4.699

1.372

6°

3°

6°

3°

6°

3°

6°

3°

6°

.094

.014

3°

.110

.025

5.5°

.410

.150

2.388

.356

3°

2.794

.635

5.5°

.385

.130

9.779

3.302

10.414

3.810

PINꢀ1

PINꢀ2

CASE

NOTE:

1. DimensionꢀL,ꢀM,ꢀWꢀapplyꢀforꢀSolderꢀDipꢀ

Finish

Recommended Solder Pad Layout

ꢀ

ꢀꢀꢀꢀꢀꢀꢀTO-220-2

Part Number

Package

Marking

C4D08120A

TO-220-2

C4D08120

Note: Recommended soldering proﬁles can be found in the applications note here:

http://www.cree.com/power_app_notes/soldering

C4D08120A Rev. A

Diode Model

V_fTꢀ= V_T+If*R_T

_T=ꢀ0.96ꢀ+ꢀ(T_J*ꢀ-2.1*10^-3)

_T=ꢀ0.06+(T_J*ꢀ8.0*10^-4)

Note: T_j= Diode Junction Temperature In Degrees Celsius,

valid from 25°C to 175°C

V_T

R_T

Notes

•ꢀ RoHSꢀCompliance

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred

to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance

with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can

be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.

•ꢀ REAChꢀCompliance

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-

cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable

future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.

REACh banned substance information (REACh Article 67) is also available upon request.

•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into

the human body nor in applications in which failure of the product could lead to death, personal injury or property

damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,

cardiacꢀdeﬁbrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀequipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀ

systems,ꢀorꢀairꢀtrafﬁcꢀcontrolꢀsystems.

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

The information in this document is subject to change without notice.

Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Fax: +1.919.313.5451

www.cree.com/power

C4D08120A Rev. A

C4D08120A_14 [CREE]

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