C4D02120A_14 [CREE]
Silicon Carbide Schottky Diode;
| 型号： | C4D02120A_14 |
| 厂家： | 
CREE, INC |
| 描述： | Silicon Carbide Schottky Diode |
| 文件： | 总6页 (文件大小：732K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
C4D02120A
VRRMꢀꢀꢀꢀꢀꢀ=ꢀꢀꢀꢀ1200ꢀVꢀ
IF (TC=135˚C) = 5 A
Qcꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ 11ꢀnC
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
Package
•ꢀ 1.2kVꢀSchottkyꢀRectifier
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent
•ꢀ High-FrequencyꢀOperation
•ꢀ Temperature-IndependentꢀSwitching
•ꢀ ExtremelyꢀFastꢀSwitching
Benefits
ꢀꢀꢀꢀꢀꢀTO-220-2
•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectifiers
•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses
•ꢀ HigherꢀEfficiency
PINꢀ1
PINꢀ2
CASE
•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements
•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway
Applications
Part Number
C4D02120A
Package
Marking
•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ
•ꢀ PowerꢀFactorꢀCorrection
•ꢀ MotorꢀDrives
ꢀ
TO-220-2
C4D02120
Maximum Ratings (TC=25°Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
RepetitiveꢀPeakꢀReverseꢀVoltage
SurgeꢀPeakꢀReverseꢀVoltage
DCꢀPeakꢀReverseꢀVoltage
Value Unit
Test Conditions
Note
VRRM
1200
1300
1200
V
V
V
VRSM
VR
10
5
2
TC=25˚C
TC=135˚C
TC=165˚C
A
IF
ContinuousꢀForwardꢀCurrentꢀꢀꢀꢀꢀꢀꢀ
13
8.4
TC=25˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
TC=110˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
IFRM
IFSM
IF,Max
Ptot
TJ
RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent
Non-RepetitiveꢀForwardꢀSurgeꢀCurrent
Non-RepetitiveꢀPeakꢀForwardꢀCurrent
PowerꢀDissipation
A
A
19
16.5
TC=25˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
TC=110˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
200
160
TC=25˚C,ꢀtP=10ꢀms,ꢀPulse
TC=110˚C,ꢀtP=10ꢀms,ꢀPulse
A
60
26
TC=25˚C
TC=110˚C
W
˚C
-55 to
+175
OperatingꢀJunctionꢀRange
-55 to
+135
Tstg
StorageꢀTemperatureꢀRange
TO-220ꢀMountingꢀTorque
˚C
1
8.8
Nm
M3ꢀScrew
lbf-in 6-32ꢀScrew
1
C4D02120A Rev. C
Electrical Characteristics
Symbol Parameter
Typ.
Max.
Unit
V
Test Conditions
IF = 2 A TJ=25°C
Note
1.4
1.9
1.8
3
VF
ForwardꢀVoltage
ReverseꢀCurrent
IF = 2 A TJ=175°C
10ꢀ
40
50
150
VRꢀ=ꢀ1200ꢀVꢀꢀTJ=25°C
VRꢀ=ꢀ1200ꢀVꢀꢀTJ=175°C
IR
μA
VRꢀ=ꢀ800ꢀV,ꢀIF = 2A
di/dtꢀ=ꢀ200ꢀA/μs
TJꢀ=ꢀ25°C
QC
TotalꢀCapacitiveꢀCharge
TotalꢀCapacitance
11
nC
pF
167
11
8
VRꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ25°C,ꢀfꢀ=ꢀ1ꢀMHz
VRꢀ=ꢀ400ꢀV,ꢀTJꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz
VRꢀ=ꢀ800ꢀV,ꢀTJꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz
C
Note:
1. Thisꢀisꢀaꢀmajorityꢀcarrierꢀdiode,ꢀsoꢀthereꢀisꢀnoꢀreverseꢀrecoveryꢀcharge.
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
ThermalꢀResistanceꢀfromꢀJunctionꢀ
toꢀCase
RθJC
2.5
°C/W
Typical Performance
4
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
TJ=-55°C
3.5
3
TJ=ꢀ25°C
TJ=ꢀ75°C
TJꢀ=125°C
TJꢀ=175°C
2.5
2
1.5
1
TJ=-55°C
TJ=ꢀ25°C
TJ=ꢀ75°C
TJꢀ=125°C
TJꢀ=175°C
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
0
500
1000
1500
V (V)
V (V)
R
F
Figureꢀ1.ꢀForwardꢀCharacteristics
Figureꢀ2.ꢀReverseꢀCharacteristics
2
C4D02120A Rev. C
Typical Performance
35
70
30
60
10%ꢀDuty
ꢀꢀ20%ꢀDuty
ꢀꢀ30%ꢀDuty
ꢀꢀ50%ꢀDuty
ꢀꢀ70%ꢀDuty
ꢀꢀDC
25
50
20
40
15
30
10
20
5
10
0
0
ꢀꢀ25ꢀꢀꢀꢀꢀꢀꢀꢀꢀ50ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ75ꢀꢀꢀꢀꢀꢀꢀꢀꢀ100ꢀꢀꢀꢀꢀꢀꢀꢀ125ꢀꢀꢀꢀꢀꢀꢀ150ꢀꢀꢀꢀꢀꢀꢀꢀ175
ꢀ25ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ50ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ75ꢀꢀꢀꢀꢀꢀꢀꢀꢀ100ꢀꢀꢀꢀꢀꢀꢀꢀ125ꢀꢀꢀꢀꢀꢀꢀ150ꢀꢀꢀꢀꢀꢀꢀꢀꢀ175
25 50 75 100 125 150 175
TC (˚C)
TC (˚C)
Figureꢀ4.ꢀPowerꢀDerating
Figureꢀ3.ꢀCurrentꢀDerating
14
180
160
12
140
1
0
120
8
100
80
6
60
4
40
2
20
0
0
ꢀꢀꢀ0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ200ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ400ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ600ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ800ꢀꢀꢀꢀꢀꢀꢀꢀꢀ1000
ꢀꢀ0.1ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ10ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ100ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1000
VR (V)
VR (V)
ꢀꢀꢀꢀꢀꢀFigureꢀ5.ꢀRecoveryꢀChargeꢀvs.ꢀReverseꢀVoltageꢀ
ꢀ
ꢀ
Figureꢀ6.ꢀCapacitanceꢀvs.ꢀReverseꢀVoltage
3
C4D02120A Rev. C
Typical Performance
6
1000
5
4
3
2
100
TJ =ꢀ25°C
TJꢀ=ꢀ110°C
1
0
ꢀꢀꢀ0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ200ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ400ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ600ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ800ꢀꢀꢀꢀꢀꢀꢀꢀꢀ1000
10
ꢀꢀꢀ1E-05ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-04ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-03ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-02
VR (V)
tp (s)
Figureꢀ8.ꢀNon-repetitiveꢀpeakꢀforwardꢀsurgeꢀcurrentꢀ
versusꢀpulseꢀdurationꢀ(sinusoidalꢀwaveform)
Figureꢀ7.ꢀTypicalꢀCapacitanceꢀStoredꢀEnergy
0.5
1
0.3
0.1
0.05
100E-3
0.02
SinglePulse
0.01
10E-3
1E-3
1E-6
10E-6
100E-6
1E-3
T (Sec)
10E-3
100E-3
1
Figureꢀ9.ꢀTransientꢀThermalꢀImpedance
4
C4D02120A Rev. C
Package Dimensions
Inches
Millimeters
Min
POS
PackageꢀTO-220-2
Min
.381
.235
.100
.223
.590
.143
Max
.410
.255
.120
.337
.615
.153
1.147
.550
Max
10.414
6.477
3.048
8.560
15.621
3.886
29.134
13.970
A
B
C
D
E
9.677
5.969
2.540
5.664
14.986
3.632
28.067
12.700
P
A
F
Q
J
C
B
F
X
D
S
T
G
H
J
1.105
.500
E
H
Y
Rꢀ0.197
Rꢀ0.197
1 2
G
U
L
.025
.045
.195
.165
.048
3°
.036
.055
.205
.185
.054
6°
.635
1.143
4.953
4.191
1.219
3°
.914
1.397
5.207
4.699
1.372
6°
Z
M
N
P
V
Q
S
T
L
M
W
N
3°
6°
3°
6°
U
V
W
X
Y
3°
6°
3°
6°
.094
.014
3°
.110
.025
5.5°
.410
.150
2.388
.356
3°
2.794
.635
5.5°
.385
.130
9.779
3.302
10.414
3.810
PINꢀ1
PINꢀ2
CASE
z
NOTE:
1. DimensionꢀL,ꢀM,ꢀWꢀapplyꢀforꢀSolderꢀDipꢀ
Finish
Recommended Solder Pad Layout
ꢀ
ꢀ
ꢀꢀꢀꢀꢀꢀꢀTO-220-2
Part Number
Package
Marking
C4D02120A
TO-220-2
C4D02120
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
C4D02120A Rev. C
Diode Model
VfTꢀ= VT+If*RT
T =ꢀ0.9592+(TJ*ꢀ-1.20*10-3)
V
T =ꢀ0.1673+(TJ*ꢀ2.10*10-3)
R
Note: TJ = Diode Junction Temperature In Degrees Celsius
VT
RT
Notes
•ꢀ RoHSꢀCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
•ꢀ REAChꢀCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀequipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀ
systems,ꢀorꢀairꢀtrafficꢀcontrolꢀsystems.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Fax: +1.919.313.5451
www.cree.com/power
6
C4D02120A Rev. C
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