C470EZ400-0202-2 [CREE]
EZBright Power Chip LED Rf Performance Lambertian Radiation; 的EZBright功率LED芯片的射频性能朗伯辐射
| 型号： | C470EZ400-0202-2 |
| 厂家： | 
CREE, INC |
| 描述： | EZBright Power Chip LED Rf Performance Lambertian Radiation |
| 文件： | 总5页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cree® EZ400™ Gen II LED
Data Sheet
CxxxEZ400-Sxxx00-2
Cree’sꢀ EZBright™ꢀ LEDsꢀ areꢀ theꢀ nextꢀ generationꢀ ofꢀ solid-stateꢀ LEDꢀ emittersꢀ thatꢀ combineꢀ highlyꢀ efficientꢀ InGaNꢀ
materialsꢀwithꢀCree’sꢀproprietaryꢀopticalꢀdesignꢀandꢀdeviceꢀtechnologyꢀtoꢀdeliverꢀsuperiorꢀvalueꢀforꢀhigh-intensityꢀLEDs.ꢀ
TheꢀopticalꢀdesignꢀmaximizesꢀlightꢀextractionꢀefficiencyꢀandꢀenablesꢀaꢀLambertianꢀradiationꢀpattern.ꢀAdditionally,ꢀtheseꢀ
LEDsꢀareꢀdieꢀattachableꢀwithꢀconductiveꢀepoxy,ꢀsolderꢀpasteꢀorꢀsolderꢀpreforms,ꢀasꢀwellꢀasꢀtheꢀfluxꢀeutecticꢀmethod.ꢀ
Theseꢀverticallyꢀstructured,ꢀlowꢀforwardꢀvoltageꢀLEDꢀchipsꢀareꢀapproximatelyꢀ170ꢀmicronsꢀinꢀheight.ꢀCree’sꢀEZ™ꢀchipsꢀ
areꢀtestedꢀforꢀconformityꢀtoꢀopticalꢀandꢀelectricalꢀspecifications.ꢀTheseꢀLEDsꢀareꢀusefulꢀinꢀaꢀbroadꢀrangeꢀofꢀapplications,ꢀ
suchꢀasꢀgeneralꢀillumination,ꢀautomotiveꢀlightingꢀandꢀLCDꢀbacklighting.
FEATURES
APPLICATIONS
•ꢀ EZBrightꢀPowerꢀChipꢀLEDꢀRfꢀPerformance
–ꢀ 90ꢀmWꢀmin.ꢀ@ꢀ150ꢀmAꢀ–ꢀ450ꢀ&ꢀ460ꢀnm
–ꢀ 75ꢀmWꢀmin.ꢀ@ꢀ150ꢀmAꢀ-ꢀ470ꢀnm
–ꢀ 25ꢀmWꢀmin.ꢀ@ꢀ150ꢀmAꢀ-ꢀ527ꢀnm
•ꢀ LambertianꢀRadiation
•ꢀ GeneralꢀIllumination
–ꢀ Automobile
–ꢀ Aircraft
–ꢀ DecorativeꢀLighting
–ꢀ TaskꢀLighting
•ꢀ ConductiveꢀEpoxy,ꢀSolderꢀPasteꢀorꢀPreforms,ꢀꢀ
orꢀFluxꢀEutecticꢀAttach
–ꢀ OutdoorꢀIllumination
•ꢀ WhiteꢀLEDs
•ꢀ LowꢀForwardꢀVoltageꢀ–ꢀ3.5ꢀVꢀTypicalꢀatꢀ150ꢀmA
•ꢀ SingleꢀWireꢀBondꢀStructure
•ꢀ CrosswalkꢀSignals
•ꢀ TelevisionꢀBacklighting
•ꢀ MaximumꢀDCꢀForwardꢀCurrentꢀ-ꢀ200ꢀmA
●ꢀ DielectricꢀPassivationꢀAcrossꢀEpiꢀSurface
CxxxEZ400-Sxxx00 Chip Diagram
ꢀ
Top View
Die Cross Section
Bottom View
EZBrightꢀLEDꢀChip
380ꢀxꢀ380ꢀμm2
Backside
Metallization
Cathodeꢀ(-)
GoldꢀBondꢀPad
tꢀ=ꢀ170ꢀμm
112ꢀμm
DielectricꢀPassivation
Anodeꢀ(+);
3ꢀμmꢀAuSn
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°CNote 1
DCꢀForwardꢀCurrent
CxxxEZ400-Sxxx00-2
200ꢀmA
PeakꢀForwardꢀCurrent
350ꢀmAꢀNoteꢀ3
145°C
LEDꢀJunctionꢀTemperature
ReverseꢀVoltage
5ꢀV
OperatingꢀTemperatureꢀRange
StorageꢀTemperatureꢀRange
-40°Cꢀtoꢀ+100°C
-40°Cꢀtoꢀ+120°C
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA
Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
Part Number
Forward Voltage (VF, V)
(λD, nm)
Min.
Typ.
3.5
3.5
3.5
3.7
Max.
Max.
Typ.
20
C450EZ400-Sxxx00-2
C460EZ400-Sxxx00-2
C470EZ400-Sxxx00-2
C527EZ400-Sxxx00-2
3.1
3.1
3.1
3.2
4.1
4.1
4.1
4.2
2
2
2
2
21
24
35
Mechanical Specifications
Description
CxxxEZ400-Sxxx00-2
Dimension
Tolerance
±40
P-NꢀJunctionꢀAreaꢀ(µm)
ChipꢀAreaꢀ(µm)
350ꢀxꢀ350
380ꢀxꢀ380
170
±40
ChipꢀThicknessꢀ(µm)
±25
TopꢀAuꢀBondꢀPadꢀDiameterꢀ(µm)
AuꢀBondꢀPadꢀThicknessꢀ(µm)
BackꢀContactꢀMetalꢀAreaꢀ(µm)
BackꢀContactꢀMetalꢀThicknessꢀ(µm)
112
±15
3.0
±1.0
±40
380ꢀxꢀ380
3.0
±1.0
Notes:
1.ꢀ Maximumꢀ ratingsꢀ areꢀ package-dependent.ꢀ Theꢀ aboveꢀ ratingsꢀ wereꢀ determinedꢀ usingꢀ aꢀ Au-platedꢀ TO39ꢀ headerꢀ withoutꢀ anꢀ
encapsulantꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀTheꢀjunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀ
specificꢀpackageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).ꢀSeeꢀCreeꢀ
EZBrightꢀApplicationsꢀNoteꢀforꢀassembly-processꢀinformation.
2.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ
andꢀ operatedꢀ atꢀ 150ꢀ mAꢀ withinꢀ theꢀ maximumꢀ ratingsꢀ shownꢀ above.ꢀ Efficiencyꢀ decreasesꢀ atꢀ higherꢀ currents.ꢀ Typicalꢀ valuesꢀ
givenꢀareꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀexpectedꢀbyꢀtheꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀ
AllꢀmeasurementsꢀwereꢀmadeꢀusingꢀaꢀAu-platedꢀTO39ꢀheaderꢀwithoutꢀanꢀencapsulant.ꢀOpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀ
integratingꢀsphereꢀusingꢀIlluminanceꢀE.
3.ꢀ Thisꢀpeakꢀforwardꢀcurrentꢀspecificationꢀisꢀbasedꢀonꢀaꢀ400-msꢀpulseꢀwidthꢀatꢀaꢀ1/5-dutyꢀcycleꢀwithꢀaꢀjunctionꢀtemperatureꢀofꢀ
65°C.ꢀ
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Copyrightꢀ©ꢀ2009ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀEZBright,ꢀEZ,ꢀandꢀEZ400ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
2
CPR3ED Rev. -
Standard Bins for CxxxEZ400-Sxxx00-2
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant fluxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀAꢀsortedꢀdieꢀsheetꢀcontainsꢀdieꢀ
fromꢀonlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxEZ400-Sxxx00-2)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxEZ400-0xxx-2)ꢀ
containedꢀinꢀtheꢀkit.ꢀAllꢀradiantꢀfluxꢀandꢀallꢀdominantꢀwavelengthꢀvaluesꢀshownꢀandꢀspecifiedꢀareꢀatꢀIfꢀ=ꢀ150ꢀmA.ꢀRadiantꢀ
fluxꢀvaluesꢀareꢀmeasuredꢀusingꢀAu-platedꢀTO39ꢀheadersꢀwithoutꢀanꢀencapsulant.
C450EZ400-S09000-2
C450EZ400-0213-2
C450EZ400-0209-2
C450EZ400-0205-2
C450EZ400-0214-2
C450EZ400-0210-2
C450EZ400-0206-2
C450EZ400-0215-2
C450EZ400-0211-2
C450EZ400-0207-2
C450EZ400-0216-2
C450EZ400-0212-2
C450EZ400-0208-2
120ꢀmW
105ꢀmW
90ꢀmW
445ꢀnm
447.5ꢀnm
450ꢀnm
452.5ꢀnm
455ꢀnm
Dominant Wavelength
C460EZ400-S09000-2
C460EZ400-0213-2
C460EZ400-0209-2
C460EZ400-0205-2
C460EZ400-0214-2
C460EZ400-0215-2
C460EZ400-0211-2
C460EZ400-0207-2
C460EZ400-0216-2
C460EZ400-0212-2
C460EZ400-0208-2
120ꢀmW
105ꢀmW
90ꢀmW
C460EZ400-0210-2
C460EZ400-0206-2
455ꢀnm
457.5ꢀnm
460ꢀnm
462.5ꢀnm
465ꢀnm
Dominant Wavelength
C470EZ400-S07500-2
C470EZ400-0209-2
C470EZ400-0205-2
C470EZ400-0201-2
C470EZ400-0210-2
C470EZ400-0211-2
C470EZ400-0207-2
C470EZ400-0203-2
C470EZ400-0212-2
C470EZ400-0208-2
C470EZ400-0204-2
105ꢀmW
90ꢀmW
75ꢀmW
C470EZ400-0206-2
C470EZ400-0202-2
465ꢀnm
467.5ꢀnm
470ꢀnm
472.5ꢀnm
475ꢀnm
Dominant Wavelength
C527EZ400-S2500-2
C527EZ400-0207-2
C527EZ400-0204-2
C527EZ400-0201-2
C527EZ400-0208-2
C527EZ400-0209-2
C527EZ400-0206-2
C527EZ400-0203-2
50ꢀmW
C527EZ400-0205-2
C527EZ400-0202-2
40ꢀmW
25ꢀmW
520ꢀnm
525ꢀnm
530ꢀnm
535ꢀnm
Dominant Wavelength
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
Copyrightꢀ©ꢀ2009ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀEZBright,ꢀEZ,ꢀandꢀEZ400ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
3
CPR3ED Rev. -
Characteristic Curves
TheseꢀareꢀrepresentativeꢀmeasurementsꢀforꢀtheꢀEZBright400.ꢀꢀActualꢀcurvesꢀwillꢀvaryꢀslightlyꢀforꢀtheꢀvariousꢀradiantꢀfluxꢀ
andꢀdominantꢀwavelengthꢀbins.
Forward Current vs. Forward Voltage
Relative Light Intensity vs Junction Temperature
200
175
150
125
100
75
100%
95%
90%
85%
80%
75%
70%
65%
50
25
0
25
50
75
100
125
150
0
1
2
3
4
5
Vf (V)
Junction Temperature (°C)
Relative Intensity vs. Forward Current
Voltage Shift vs Junction Temperature
150%
125%
100%
75%
50%
25%
0%
0.100
0.000
-0.100
-0.200
-0.300
-0.400
-0.500
-0.600
0
25
50
75
100
125
150
175
200
225
25
50
75
100
125
150
Junction Temperature (°C)
If (mA)
Dominant Wavelength Shift vs Junction Temperature
Wavelength Shift vs. Forward Current
16
12
8
6
5
4
3
4
2
1
0
0
-4
-8
-1
-2
0
25
50
75
100
125
150
175
200
225
25
50
75
100
125
150
Junction Temperature (°C)
If (mA)
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2009ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀEZBright,ꢀEZ,ꢀandꢀEZ400ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
4
CPR3ED Rev. -
Radiation Pattern
ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀEZBrightꢀPowerꢀChipꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀ
eachꢀchip.
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Copyrightꢀ©ꢀ2009ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀEZBright,ꢀEZ,ꢀandꢀEZ400ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
5
CPR3ED Rev. -
相关型号：
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