C460DA3547-SXXX00 [CREE]
Rectangular LED RF Performance High Reliability - Eutectic Attach; 矩形LED射频性能的高可靠性 - 低共熔附
| 型号： | C460DA3547-SXXX00 |
| 厂家： | 
CREE, INC |
| 描述： | Rectangular LED RF Performance High Reliability - Eutectic Attach |
| 文件： | 总5页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Direct Attach DA3547™ LEDs
CxxxDA3547-Sxxx00
Data Sheet
Cree’sꢀDirectꢀAttachꢀDA3547ꢀLEDsꢀareꢀtheꢀnextꢀgenerationꢀofꢀsolid-stateꢀLEDꢀemittersꢀthatꢀcombineꢀhighlyꢀefficientꢀ
InGaNꢀmaterialsꢀwithꢀCree’sꢀproprietaryꢀdeviceꢀtechnologyꢀandꢀsilicon-carbideꢀsubstratesꢀtoꢀdeliverꢀsuperiorꢀvalueꢀ
forꢀtheꢀTV-backlightingꢀandꢀgeneral-illuminationꢀmarkets.ꢀTheꢀDA3547ꢀLEDsꢀareꢀamongꢀtheꢀbrightestꢀinꢀtheꢀtop-viewꢀ
marketꢀwhileꢀdeliveringꢀaꢀlowꢀforwardꢀvoltage,ꢀresultingꢀinꢀaꢀveryꢀbrightꢀandꢀhighlyꢀefficientꢀsolution.ꢀTheꢀbondpad-
downꢀdesignꢀallowsꢀꢀforꢀeutecticꢀdieꢀattach,ꢀeliminatingꢀtheꢀneedꢀforꢀwireꢀbonds,ꢀandꢀenablesꢀsuperiorꢀperformanceꢀ
fromꢀimprovedꢀthermalꢀmanagement.ꢀTheꢀdesignꢀisꢀoptimallyꢀsuitedꢀforꢀindustry-standardꢀtop-viewꢀpackages.
FEATURES
APPLICATIONS
•ꢀ RectangularꢀLEDꢀRFꢀPerformance
–ꢀ 450ꢀ&ꢀ460ꢀnmꢀ–ꢀ76ꢀmWꢀmin
•ꢀ LargeꢀLCDꢀBacklightingꢀ
–ꢀ Television
•ꢀ HighꢀReliabilityꢀ-ꢀꢀEutecticꢀAttach
•ꢀ LowꢀForwardꢀVoltageꢀ(Vf)ꢀ–ꢀ3.1ꢀVꢀTypicalꢀatꢀ50ꢀmA
•ꢀ MaximumꢀDCꢀForwardꢀCurrentꢀ–ꢀ150ꢀmA
•ꢀ 1000-VꢀESDꢀThresholdꢀRating
•ꢀ GeneralꢀIllumination
•ꢀ MediumꢀLCDꢀBacklightingꢀ
–ꢀ PortableꢀPCs
–ꢀ Monitors
•ꢀ InGaNꢀJunction-DownꢀDesignꢀforꢀImprovedꢀThermalꢀ •ꢀ LEDꢀVideoꢀDisplays
Management
•ꢀ WhiteꢀLEDs
•ꢀ NoꢀWireꢀBondsꢀRequired
CxxxDA3547-Sxxx00 Chip Diagram
ꢀ
Top View
Die Cross Section
Bottom View
DA3547ꢀLED
350ꢀxꢀ470ꢀμm
Anodeꢀ(+)
296ꢀxꢀ90ꢀμmꢀ
Gapꢀ90ꢀμmꢀ
Cathodeꢀ(-)
296ꢀxꢀ236ꢀμm
tꢀ=ꢀ155ꢀμm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°CNotes 1,3, & 4
DCꢀForwardꢀCurrent
CxxxDA3547-Sxxx00
150ꢀmA
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)
LEDꢀJunctionꢀTemperature
200ꢀmA
150°C
ReverseꢀVoltage
5ꢀV
OperatingꢀTemperatureꢀRange
-40°Cꢀtoꢀ+100°C
-40°Cꢀtoꢀ+100°C
1000ꢀV
StorageꢀTemperatureꢀRange
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2
Classꢀ2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.1
Max.
Max.
Typ.
20
C450DA3547-Sxxx00
C460DA3547-Sxxx00
2.8
2.8
3.4
3.4
2
2
3.1
21
Mechanical Specifications
Description
CxxxDA3547-Sxxx00
Dimension
Tolerance
±35
P-NꢀJunctionꢀAreaꢀ(μm)
296ꢀxꢀ416
350ꢀxꢀ470
200ꢀxꢀ320
155
ChipꢀBottomꢀAreaꢀ(μm)
±35
ChipꢀTopꢀAreaꢀ(μm)
±35
ChipꢀThicknessꢀ(μm)
±15
AuSnꢀBondꢀPadꢀWidthꢀ–ꢀAnodeꢀ(um)
AuSnꢀBondꢀPadꢀLengthꢀ–ꢀAnodeꢀ(um)
AuSnꢀBondꢀPadꢀWidthꢀ–ꢀCathodeꢀ(um)
AuSnꢀBondꢀPadꢀLengthꢀ–ꢀCathodeꢀ(um)
BondꢀPadꢀGapꢀ(μm)
90
±15
296
±35
236
±35
296
±35
90
±15
AuSnꢀBondꢀPadꢀThicknessꢀ(μm)
3
±0.5
Notes:
1.ꢀ Maximumꢀratingsꢀareꢀpackage-dependent.ꢀTheꢀaboveꢀratingsꢀwereꢀdeterminedꢀusingꢀaꢀchipꢀsub-mountꢀonꢀMCPCBꢀ(withꢀsiliconeꢀencapsulationꢀandꢀ
intrinsicꢀAuSnꢀmetalꢀdieꢀattach)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀJunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀ
packageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀenergyꢀtestꢀ(RAET).ꢀ
TheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀandꢀoperatedꢀ
atꢀ50ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀareꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀ
valuesꢀexpectedꢀbyꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀmeasurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀ
packagesꢀ(withꢀHysolꢀOS4000ꢀepoxyꢀencapsulantꢀandꢀintrinsicꢀAuSnꢀmetalꢀdieꢀattach).ꢀOpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀintegratingꢀsphereꢀ
usingꢀIlluminanceꢀE.
4.ꢀ TheꢀmaximumꢀforwardꢀcurrentꢀisꢀdeterminedꢀbyꢀtheꢀthermalꢀresistanceꢀbetweenꢀtheꢀLEDꢀjunctionꢀandꢀambient.ꢀItꢀisꢀcrucialꢀforꢀtheꢀend-productꢀtoꢀbeꢀ
designedꢀinꢀaꢀmannerꢀthatꢀminimizesꢀtheꢀthermalꢀresistanceꢀfromꢀtheꢀLEDꢀjunctionꢀtoꢀambientꢀinꢀorderꢀtoꢀoptimizeꢀproductꢀperformance.
160
140
120
100
80
Rth j-a = 10 C/W
Rth j-a = 20 C/W
60
Rth j-a = 30 C/W
Rth j-a = 40 C/W
40
20
0
50
75
100
125
150
175
Ambient Temperature (C)
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀDAꢀandꢀDA3547ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
2
CPR3EL Rev. A
Standard Bins for CxxxDA3547-Sxxx00
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant fluxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀAꢀsortedꢀdieꢀsheetꢀcontainsꢀdieꢀ
fromꢀonlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxDA3547-Sxxxxx)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxDA3547-xxxxx)ꢀ
containedꢀinꢀtheꢀkit.ꢀAllꢀradiantꢀfluxꢀandꢀdominantꢀwavelengthꢀvaluesꢀshownꢀandꢀspecifiedꢀareꢀatꢀIfꢀ=ꢀ50ꢀmA.
C450DA3547-S07600
C450DA3547-0313
C450DA3547-0309
C450DA3547-0305
C450DA3547-0314
C450DA3547-0310
C450DA3547-0306
C450DA3547-0315
C450DA3547-0311
C450DA3547-0307
C450DA3547-0316
C450DA3547-0312
C450DA3547-0308
88
82
76
455
445
447.5
450
452.5
Dominant Wavelength (nm)
C460DA3547-S07600
C460DA3547-0313
C460DA3547-0309
C460DA3547-0305
C460DA3547-0314
C460DA3547-0310
C460DA3547-0306
C460DA3547-0315
C460DA3547-0311
C460DA3547-0307
C460DA3547-0316
C460DA3547-0312
C460DA3547-0308
88
82
76
465
455
457.5
460
Dominant Wavelength (nm)
462.5
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀDAꢀandꢀDA3547ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
3
CPR3EL Rev. A
Characteristic Curves
TheseꢀareꢀrepresentativeꢀmeasurementsꢀforꢀtheꢀDAꢀLEDꢀproduct.ꢀActualꢀcurvesꢀwillꢀvaryꢀslightlyꢀforꢀtheꢀvariousꢀradiantꢀ
fluxꢀandꢀdominantꢀwavelengthꢀbins.ꢀ
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
150
100
50
2
1
0
-1
-2
0
0
50
100
150
0
1
2
3
4
5
Vf (V)
Relative Intensity vs. Forward Current
Relative Intensity vs. Wavelength
300%
250%
200%
150%
100%
50%
100
80
60
40
20
0
0%
0
50
100
150
350
400
450
500
550
600
If (mA)
Wavelength (nm)
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀDAꢀandꢀDA3547ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
4
CPR3EL Rev. A
Radiation Pattern
ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀDAꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀeachꢀchip.
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀDAꢀandꢀDA3547ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
5
CPR3EL Rev. A
相关型号：
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