C450DA1000-0324 [CREE]
Direct Attach LED Technology Rectangular LED RF Performance; 直连式LED技术的矩形LED RF性能
| 型号： | C450DA1000-0324 |
| 厂家： | 
CREE, INC |
| 描述： | Direct Attach LED Technology Rectangular LED RF Performance |
| 文件： | 总5页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Direct Attach DA1000™ LEDs
CxxxDA1000-Sxx000
Data Sheet
Cree’sꢀDirectꢀAttachꢀDA1000ꢀLEDsꢀareꢀtheꢀnextꢀgenerationꢀofꢀsolid-stateꢀLEDꢀemittersꢀthatꢀcombineꢀhighlyꢀefficientꢀ
InGaNꢀmaterialsꢀwithꢀCree’sꢀproprietaryꢀdeviceꢀtechnologyꢀandꢀsilicon-carbideꢀsubstratesꢀtoꢀdeliverꢀsuperiorꢀvalueꢀforꢀ
theꢀgeneral-illuminationꢀmarket.ꢀTheꢀDA1000ꢀLEDsꢀareꢀamongꢀtheꢀbrightestꢀinꢀtheꢀlightingꢀmarketꢀwhileꢀdeliveringꢀ
aꢀlowꢀforwardꢀvoltage,ꢀresultingꢀinꢀaꢀveryꢀbrightꢀandꢀhighlyꢀefficientꢀsolution.ꢀTheꢀbondpad-downꢀdesignꢀallowsꢀforꢀ
aꢀeutecticꢀdirectꢀdie-attachꢀprocess,ꢀeliminatingꢀtheꢀneedꢀforꢀwireꢀbonds,ꢀandꢀenablesꢀsuperiorꢀperformanceꢀfromꢀ
improvedꢀthermalꢀmanagement.
FEATURES
APPLICATIONS
•ꢀ DirectꢀAttachꢀLEDꢀTechnology
•ꢀ GeneralꢀIllumination
−ꢀ Aircraft
•ꢀ RectangularꢀLEDꢀRFꢀPerformance
–ꢀ 450ꢀ&ꢀ460ꢀnmꢀ–ꢀ485ꢀmWꢀmin
−ꢀ DecorativeꢀLighting
−ꢀ TaskꢀLighting
•ꢀ HighꢀReliabilityꢀ-ꢀꢀEutecticꢀAttach
•ꢀ LowꢀForwardꢀVoltageꢀ(Vf)ꢀ–ꢀ3.15ꢀVꢀTypicalꢀatꢀ350ꢀmA
•ꢀ MaximumꢀDCꢀForwardꢀCurrentꢀ–ꢀ1000ꢀmA
•ꢀ InGaNꢀJunction-DownꢀDesignꢀforꢀImprovedꢀThermalꢀ
Management
−ꢀ OutdoorꢀIllumination
•ꢀ WhiteꢀLEDs
•ꢀ CameraꢀFlash
•ꢀ ProjectionꢀDisplays
•ꢀ Automotive
•ꢀ NoꢀWireꢀBondsꢀRequired
CxxxDA1000-Sxx000 Chip Diagram
ꢀ
Top View
Die Cross Section
Bottom View
DA1000ꢀLED
1000ꢀxꢀ1000ꢀμm
Anodeꢀ(+)
945ꢀxꢀ75ꢀμmꢀ
Gapꢀ75ꢀμmꢀ
Cathodeꢀ(-)
945ꢀxꢀ795ꢀμm
tꢀ=ꢀ335ꢀμm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°CNotes 1,2 & 3
DCꢀForwardꢀCurrent
CxxxDA1000-Sxx000
1000ꢀmA
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)
LEDꢀJunctionꢀTemperature
1250ꢀmA
150°C
ReverseꢀVoltage
5ꢀV
OperatingꢀTemperatureꢀRange
StorageꢀTemperatureꢀRange
-40°Cꢀtoꢀ+100°C
-40°Cꢀtoꢀ+100°C
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.15
3.15
Max.
Max.
Typ.
20
C450DA1000-Sxx000
C460DA1000-Sxx000
2.7
2.7
3.5
3.5
2
2
21
Mechanical Specifications
Description
CxxxDA1000-Sxx000
Dimension
Tolerance
±35
P-NꢀJunctionꢀAreaꢀ(μm)
960ꢀxꢀ960
ChipꢀBottomꢀAreaꢀ(μm)
1000ꢀxꢀ1000
±35
ChipꢀTopꢀAreaꢀ(μm)
630ꢀxꢀ630
335
75
±45
ChipꢀThicknessꢀ(μm)
±25
AuSnꢀBondꢀPadꢀWidthꢀ–ꢀAnodeꢀ(um)
AuSnꢀBondꢀPadꢀLengthꢀ–ꢀAnodeꢀ(um)
AuSnꢀBondꢀPadꢀWidthꢀ–ꢀCathodeꢀ(um)
AuSnꢀBondꢀPadꢀLengthꢀ–ꢀCathodeꢀ(um)
BondꢀPadꢀGapꢀ(μm)
±15
945
795
945
75
±35
±35
±35
±15
AuSnꢀBondꢀPadꢀThicknessꢀ(μm)
3
±0.5
Notes:
1.ꢀ Maximumꢀ ratingsꢀ areꢀ package-dependent.ꢀ Theꢀ aboveꢀ ratingsꢀ wereꢀ determinedꢀ usingꢀ aꢀ Creeꢀ 3.45-mmꢀ xꢀ 3.45-mmꢀ SMTꢀ packageꢀ (withꢀ siliconeꢀ
encapsulationꢀ andꢀ intrinsicꢀ AuSnꢀ metalꢀ dieꢀ attach)ꢀ forꢀ characterization.ꢀ Ratingsꢀ forꢀ otherꢀ packagesꢀ mayꢀ differ.ꢀ Junctionꢀ temperatureꢀ shouldꢀ beꢀ
characterizedꢀinꢀaꢀspecificꢀpackageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).
2.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀandꢀoperatedꢀatꢀ350ꢀ
mAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀareꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀvaluesꢀ
expectedꢀbyꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀmeasurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1¾ꢀpackagesꢀ(withꢀ
HysolꢀOS4000ꢀepoxyꢀencapsulantꢀandꢀintrinsicꢀAuSnꢀmetalꢀdieꢀattach).ꢀOpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀintegratingꢀsphereꢀusingꢀIlluminanceꢀE.
3.ꢀ TheꢀmaximumꢀforwardꢀcurrentꢀisꢀdeterminedꢀbyꢀtheꢀthermalꢀresistanceꢀbetweenꢀtheꢀLEDꢀjunctionꢀandꢀambient.ꢀItꢀisꢀcrucialꢀforꢀtheꢀend-productꢀtoꢀbeꢀ
designedꢀinꢀaꢀmannerꢀthatꢀminimizesꢀtheꢀthermalꢀresistanceꢀfromꢀtheꢀLEDꢀjunctionꢀtoꢀambientꢀinꢀorderꢀtoꢀoptimizeꢀproductꢀperformance.
1200
1000
800
600
Rth j-a = 10 C/W
Rth j-a = 15 C/W
400
Rth j-a = 20 C/W
Rth j-a = 25 C/W
200
0
25
50
75
100
125
150
175
Ambient Temperature (C)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc.
2
CPR3ES Rev A
Standard Bins for CxxxDA1000-Sxx000
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant fluxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀAꢀsortedꢀdieꢀsheetꢀcontainsꢀdieꢀ
fromꢀonlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxDA1000-Sxxxxx)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxDA1000-xxxxx)ꢀ
containedꢀinꢀtheꢀkit.ꢀAllꢀradiantꢀfluxꢀandꢀdominantꢀwavelengthꢀvaluesꢀshownꢀandꢀspecifiedꢀareꢀatꢀIfꢀ=ꢀ350ꢀmA.
C450DA1000-S48500
C450DA1000-0325
C450DA1000-0321
C450DA1000-0317
C450DA1000-0313
C450DA1000-0309
C450DA1000-0326
C450DA1000-0322
C450DA1000-0318
C450DA1000-0314
C450DA1000-0310
C450DA1000-0327
C450DA1000-0323
C450DA1000-0319
C450DA1000-0315
C450DA1000-0311
C450DA1000-0328
C450DA1000-0324
C450DA1000-0320
C450DA1000-0316
C450DA1000-0312
625
585
550
515
485
455
445
447.5
450
452.5
Dominant Wavelength (nm)
C460DA1000-S48500
C460DA1000-0325
C460DA1000-0321
C460DA1000-0317
C460DA1000-0313
C460DA1000-0309
C460DA1000-0326
C460DA1000-0322
C460DA1000-0318
C460DA1000-0314
C460DA1000-0310
C460DA1000-0327
C460DA1000-0323
C460DA1000-0319
C460DA1000-0315
C460DA1000-0311
C460DA1000-0328
C460DA1000-0324
C460DA1000-0320
C460DA1000-0316
C460DA1000-0312
625
585
550
515
485
465
455
457.5
460
Dominant Wavelength (nm)
462.5
Note:ꢀTheꢀradiant-fluxꢀvaluesꢀaboveꢀareꢀrepresentativeꢀofꢀtheꢀdieꢀinꢀaꢀT-1¾ꢀencapsulatedꢀ5-mmꢀlamp.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc.
3
CPR3ES Rev A
Characteristic Curves
TheseꢀareꢀrepresentativeꢀmeasurementsꢀforꢀtheꢀDAꢀLEDꢀproduct.ꢀActualꢀcurvesꢀwillꢀvaryꢀslightlyꢀforꢀtheꢀvariousꢀradiantꢀ
fluxꢀandꢀdominantꢀwavelengthꢀbins.ꢀ
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
1000
900
800
700
600
500
400
300
200
100
0
2
1
0
-1
-2
0
1
2
3
4
5
0
200
400
600
800
1000
Vf (V)
If (mA)
Relative Intensity vs. Forward Current
Dominant Wavelength Shift Vs Junction Temperature
250%
200%
150%
100%
50%
6
5
4
3
2
1
0
0%
25
50
75
100
125
150
0
200
400
600
800
1000
Junction Temperature (°C)
If (mA)
Voltage Shift Vs Junction Temperature
Relative Light Intensity Vs Junction Temperature
0.000
-0.050
-0.100
-0.150
-0.200
-0.250
-0.300
-0.350
100%
95%
90%
85%
80%
75%
70%
65%
25
50
75
100
125
150
25
50
75
100
125
150
Junction Temperature (°C)
Junction Temperature (°C)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc.
4
CPR3ES Rev A
Radiation Pattern
ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀDAꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀeachꢀchip.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc.
5
CPR3ES Rev A
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