概述
数据手册C3D1P7060Q 概述
Silicon Carbide Schottky Diode 碳化硅肖特基二极管
C3D1P7060Q 数据手册
通过下载C3D1P7060Q数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载C3D1P7060Q
VRRM
IF; TC<150˚C=ꢀ1.7ꢀA
Qcꢀ ꢀꢀꢀ=ꢀꢀ 5.6ꢀnC
=
600 V
Silicon Carbide Schottky Diode
™
Z-Rec RectifieR
Features
Package
•ꢀ 600-VoltꢀSchottkyꢀRectifier
•ꢀ OptimizedꢀforꢀPFCꢀBoostꢀDiodeꢀApplication
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent
•ꢀ High-FrequencyꢀOperation
•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior
•ꢀ ExtremelyꢀFastꢀSwitching
•ꢀ PositiveꢀTemperatureꢀCoefficientꢀonꢀVF
ꢀꢀꢀꢀꢀPowerQFNꢀ3.3x3.3ꢀ ꢀꢀꢀꢀꢀꢀꢀ
Benefits
•ꢀ Smallꢀcompactꢀsurfaceꢀmountꢀpackage
•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses
•ꢀ HigherꢀEfficiency
•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements
•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway
Applications
Part Number
Package
Marking
C3D1P7060
•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ
•ꢀ LEDꢀLightingꢀ
ꢀ
C3D1P7060Q
QFNꢀ3.3
Maximum Ratings
Symbol Parameter
Value
Unit
Test Conditions
Note
VRRM
VRSM
VDC
RepetitiveꢀPeakꢀReverseꢀVoltage
SurgeꢀPeakꢀReverseꢀVoltage
DCꢀBlockingꢀVoltage
600
600
600
V
V
V
1.7
3
A
A
TC<150˚C,ꢀNoꢀACꢀComponent
TC<135˚C,ꢀNoꢀACꢀComponent
See
Figꢀ3
IF
ContinuousꢀForwardꢀCurrent
7
4.4
TC=25˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀpulseꢀ
TC=110˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀpulse
IFRM
RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent
Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent
PowerꢀDissipation
A
A
15
12
TC=25˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀpulse
TC=110˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀpulse
IFSM
39
17
TC=25˚C
TC=110˚C
Ptot
W
-55 to
+175
TJꢀ,ꢀTstg
OperatingꢀJunctionꢀandꢀStorageꢀTemperature
MaximumꢀCaseꢀTemperature
˚C
˚C
T
150
c
Subject to change without notice.
www.cree.com
1
Electrical Characteristics
Symbol Parameter
Typ.
Max.
Unit
V
Test Conditions
IFꢀ=ꢀ1.7ꢀAꢀꢀTJ=25°C
Note
1.5
1.8
1.7
2.4
VF
ForwardꢀVoltage
ReverseꢀCurrent
IFꢀ=ꢀ1.7ꢀAꢀꢀTJ=175°C
10
20
50
100
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
IR
μA
VRꢀ=ꢀ600ꢀV,ꢀIFꢀ=ꢀ1.7A
di/dtꢀ=ꢀ500ꢀA/μs
TJꢀ=ꢀ25°C
QC
C
TotalꢀCapacitiveꢀCharge
TotalꢀCapacitance
5.6
nC
pF
100
7
6
VRꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ25°C,ꢀfꢀ=ꢀ1ꢀMHz
VRꢀ=ꢀ200ꢀV,ꢀTJꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz
VRꢀ=ꢀ400ꢀV,ꢀTJꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz
Note:
1.ꢀThisꢀisꢀaꢀmajorityꢀcarrierꢀdiode,ꢀsoꢀthereꢀisꢀnoꢀreverseꢀrecoveryꢀcharge.
Thermal Characteristics
Symbol Parameter
Typ.
3.8
Unit
RθJC
PackageꢀThermalꢀResistanceꢀfromꢀJunctionꢀtoꢀCase
°C/W
Typical Performance
10.00
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
3.5
3.0
TJ=-55°C
TJ=ꢀ25°C
TJ=ꢀ75°C
TJꢀ=125°C
2.5
TJꢀ=150°C
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
200
400
600
800
1000
1200
VF (V)
VR (V)
Figureꢀ1.ꢀForwardꢀCharacteristics
Figureꢀ2.ꢀReverseꢀCharacteristics
2
C3D1P7060Q Rev. -
Typical Performance
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
18
16
14
12
10
8
20%ꢀDuty*
ꢀꢀ30%ꢀDuty*
ꢀꢀ50%ꢀDuty*
ꢀꢀ70%ꢀDuty*
ꢀꢀDC
6
4
2
0.0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC ˚C
TC ˚C
Figureꢀ3.ꢀCurrentꢀDerating
Figureꢀ4.ꢀPowerꢀDerating
9
8
7
6
5
4
3
2
1
0
120
100
80
60
40
20
0
0
100
200
300
400
500
600
0.1
1
10
VR (V)
100
1000
VR (V)
ꢀꢀꢀꢀꢀꢀFigureꢀ5.ꢀRecoveryꢀChargeꢀvs.ꢀReverseꢀVoltageꢀ
ꢀ
ꢀ
Figureꢀ6.ꢀCapacitanceꢀvs.ꢀReverseꢀVoltage
3
C3D1P7060Q Rev. -
Typical Performance
10
1
0.1
0.01
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
T (Sec)
Figureꢀ7.ꢀTransientꢀThermalꢀImpedance
Diode Model
VfT = VT+If*RT
T =ꢀ0.99+(TJ*ꢀ-1.5*10-3)
V
T =ꢀ0.22+(TJ*ꢀ2.6*10-3)
R
Note: Tj = Diode Junction Temperature In Degrees Celcius
VT
RT
4
C3D1P7060Q Rev. -
Package Dimensions
PackageꢀQFNꢀ3.3
AllꢀDimensionsꢀareꢀinꢀmm
Tolerancesꢀareꢀ0.05ꢀmmꢀifꢀnotꢀspecified
NCꢀ=ꢀNoꢀConnect
5
C3D1P7060Q Rev. -
Recommended Landing Pattern (All Dimensions are in mm)
Note:ꢀTheꢀdesignꢀofꢀtheꢀlandꢀpatternꢀandꢀtheꢀsizeꢀofꢀtheꢀthermalꢀpadꢀdependꢀmainlyꢀonꢀtheꢀthermalꢀcharacteristicꢀ
andꢀpowerꢀdissipation.ꢀInꢀgeneral,ꢀtheꢀsizeꢀofꢀtheꢀthermalꢀpadꢀshouldꢀbeꢀasꢀcloseꢀtoꢀtheꢀexposedꢀpadꢀofꢀtheꢀpackageꢀ
asꢀpossible,ꢀprovidedꢀthatꢀthereꢀisꢀnoꢀbridgingꢀbetweenꢀtheꢀthermalꢀpadꢀandꢀtheꢀleadꢀpads.
Theꢀ0.050mmꢀextraꢀlengthꢀandꢀwidthꢀprovidesꢀspaceꢀtoꢀaccommodateꢀtheꢀplacementꢀtoleranceꢀofꢀtheꢀcomponentꢀ
duringꢀpickꢀandꢀplaceꢀprocess.ꢀTheꢀ0.150mmꢀalongꢀtheꢀperimeterꢀpresentꢀareasꢀforꢀsolderꢀtoꢀformꢀfilletꢀalongꢀtheꢀ
sideꢀmetalꢀedgesꢀofꢀtheꢀpackage.
“Theꢀ levelsꢀ ofꢀ environmentallyꢀ sensitive,ꢀ persistentꢀ biologicallyꢀ toxicꢀ (PBT),ꢀ persistentꢀ organicꢀ pollutantsꢀ (POP),ꢀ orꢀ otherwiseꢀ restrictedꢀ materialsꢀ inꢀ
thisꢀproductꢀareꢀbelowꢀtheꢀmaximumꢀconcentrationꢀvaluesꢀ(alsoꢀreferredꢀtoꢀasꢀtheꢀthresholdꢀlimits)ꢀpermittedꢀforꢀsuchꢀsubstances,ꢀorꢀareꢀusedꢀinꢀanꢀ
exemptedꢀapplication,ꢀinꢀaccordanceꢀwithꢀEUꢀDirectiveꢀ2002/95/ECꢀonꢀtheꢀrestrictionꢀofꢀtheꢀuseꢀofꢀcertainꢀhazardousꢀsubstancesꢀinꢀelectricalꢀandꢀelectronicꢀ
equipmentꢀ(RoHS),ꢀasꢀamendedꢀthroughꢀAprilꢀ21,ꢀ2006.”
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
6
C3D1P7060Q Rev. -
C3D1P7060Q 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| C3D1P7060Q_16 | CREE | Silicon Carbide Schottky Diode | 获取价格 |
|
| C3D20 | LITTELFUSE | Zener Diode, 20V V(Z), 15%, 10W, | 获取价格 |
|
| C3D200 | LITTELFUSE | Zener Diode, 200V V(Z), 15%, 10W, | 获取价格 |
|
| C3D20060D | CREE | Z-RecTM Rectifiers and Zero-Recovery® Rectifiers | 获取价格 |
|
| C3D20060D_13 | CREE | Silicon Carbide Schottky Diode | 获取价格 |
|
| C3D20065D | CREE | Silicon Carbide Schottky Diode | 获取价格 |
|
| C3D24 | LITTELFUSE | Zener Diode, 24V V(Z), 15%, 10W, | 获取价格 |
|
| C3D25170H | CREE | Silicon Carbide Schottky Diode | 获取价格 |
|
| C3D30065D | CREE | Silicon Carbide Schottky Diode | 获取价格 |
|
| C3D33 | LITTELFUSE | Zener Diode, 33V V(Z), 15%, 10W, | 获取价格 |
|
C3D1P7060Q 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
