TIP41 [COMSET]
SILICON POWER TRANSISTORS; 硅功率晶体管
| 型号： | TIP41 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON POWER TRANSISTORS |
| 文件： | 总4页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN TIP41-A-B-C
SILICON POWER TRANSISTORS
They are epitaxial-base NPN power transistors mounted in jedec TO-220 plastic package.
They are intended for use in medium power linear and switching applications.
PNP complements are TIP42-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
Ratings
Value
Unit
TIP41
40
60
80
100
40
TIP41A
TIP41B
TIP41C
TIP41
Collector-Base Voltage
V
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
60
80
100
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
VEBO
5
6
TIP41
TIP41A
TIP41B
TIP41C
IC
Collector Current
A
A
TIP41
TIP41A
TIP41B
TIP41C
ICM
Collector Peak Current
10
04/10/2012
COMSET SEMICONDUCTORS
1 | 4
NPN TIP41-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
TIP41
TIP41A
TIP41B
TIP41C
TIP41
IB
Base Current
2
A
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
@ Tc < 25°
@ Ta < 25°
65
2
Power Dissipation
PC
Watts
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TJ
Ts
Junction Temperature
150
°C
Storage Temperature range
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
TIP41
TIP41A
TIP41B
TIP41C
TIP41
From junction to mounting base
1.92
°C/W
RthJ-MB
TIP41A
TIP41B
TIP41C
From junction to ambient in free air
62.5
°C/W
RthJ-A
04/10/2012
COMSET SEMICONDUCTORS
2 | 4
NPN TIP41-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICES
Ratings
Test Condition(s)
Min Typ Max Unit
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
Collector Cutoff Current
IE= 0, VCE = VCEO
-
-
0.4
Ma
mA
mA
V
IB= 0, VCE = 30V
IB= 0, VCE = 60V
-
-
-
-
0.7
0.7
ICEO
Collector Cutoff Current
Emitter Cutoff Current
TIP41A
TIP41B
TIP41C
TIP41
IEBO
VEB= 5 V, IC= 0
-
-
1
40
60
80
-
-
-
-
-
-
-
-
TIP41A
TIP41B
Collector-Emitter
Breakdown Voltage (*)
VCEO
IC= 30 mA, IB= 0
TIP41C 100
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
Collector-Emitter
saturation Voltage (*)
IC= 6 A, IB= 600
mA
VCE(SAT)
-
-
-
-
-
-
-
1.5
2
V
VBE(on)
Base-Emitter Voltage (*) IC= 6 A, VCE= 4 V
-
V
VCE= 4 V, IC= 0.3 A
DC Current Gain (*)
30
-
hFE
-
VCE= 4 V, IC= 3 A
15
75
-
Small Signal Current
Gain
VCE= 10 V, IC= 0.5
A, f= 1kHz
hfe
20
-
Current Gain-Bandwidth
Product
VCE= 10 V, IC= 0.5
A
fT
3
-
MHz
TIP41B
TIP41C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
04/10/2012 COMSET SEMICONDUCTORS
3 | 4
NPN TIP41-A-B-C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
Max.
A
B
C
D
E
F
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
G
H
L
M
N
P
R
S
T
0,46
2,50
4,98
2.49
0,70
U
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
04/10/2012
info@comsetsemi.com
4 | 4
COMSET SEMICONDUCTORS
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