BU806 [COMSET]
SILICON DARLINGTON POWER TRANSISTORS; 硅达林顿功率晶体管
| 型号： | BU806 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON DARLINGTON POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BU806
SILICON DARLINGTON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in
a TO-220 plastic package.
They are high voltage, high current devices for fast switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCBO
VCEV
VCEO
VEBO
IC
Collector-Base Voltage
400
V
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
400
200
V
V
6
Collector Current
8
A
ICM
IB
Collector Peak Current
Base Current
15
A
2
60
A
PT
Power Dissipation at Case Temperature
Junction Temperature
Storage Temperature range
T
mb < 25°C
W
tJ
150
°C
ts
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJC
RthJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
2.08
70
°C/W
29/09/2012
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BU806
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
Collector-Emitter
Breakdown Voltage (*)
VCEO
IC= 100 mA, IB= 0
200
-
-
V
ICEOV
ICES
Collector Cutoff Current
Collector Cutoff Current
V
CE = 400 V, VBE(off) = 6 V
CE = 400 V, VBE(off) = 0 V
-
-
-
-
100
100
µA
µA
V
IEBO
Emitter Cutoff Current
VEB= 6 V, IC= 0
-
-
-
-
3
mA
V
Collector-Emitter
saturation Voltage (*)
VCE(SAT)
IC= 5 A, IB= 250 mA
1.5
Base-Emitter Saturation
Voltage (*)
VBE(SAT)
VF
IC= 5 A, IB= 250 mA
-
-
-
-
2.4
3.5
V
V
Diode forward Voltage (*) IF= 7 A
SWITCHING TIMES.
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ton
turn-on time
Storage Time
Fall Time
-
-
-
0.35
0.55
0.2
-
-
-
VCC= 100 V; IC= 5 A
IB1= 50mA, IB2= 500 mA
µs
ts
tf
(*) These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠ 1.5%
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BU806
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
Max.
A
B
C
D
E
F
9,90
10,30
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
G
H
L
M
N
P
R
S
T
0,46
2,50
4,98
2.49
0,70
U
Pin 1 :
Pin 2 :
Pin 3 :
Package
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
29/09/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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