BD136 [COMSET]
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.; 硅平面外延功率晶体管。
| 型号： | BD136 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON PLANAR EPITAXIAL POWER TRANSISTORS. |
| 文件： | 总3页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN BD136 – BD138 – BD140
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
The BD136-BD138-BD140 are PNP Transistors
They are recommended for driver stages in hi-fi amplifiers and television circuits.
They are mounted in Jedec TO-126 plastic package.
NPN complements are BD135-BD137-BD139.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
-VCBO
Ratings
Value
Unit
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
45
60
100
45
60
80
45
60
Collector-Base Voltage (IE= 0)
V
-VCEO
Collector-Emitter Voltage (IB= 0)
V
V
-VCER
Collector-Emitter Voltage (RBE= 1 kΩ)
100
-VEBO
-IC
Emitter-Base Voltage (IE= 0)
Collector Current
5
1.5
2
V
A
-IC
-ICM
-IB
PT
TJ
TStg
Base current
0.5
8
150
A
Watts
°C
Total power Dissipation
Junction Temperature
Storage Temperature
@ Tmb = 70°C
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-mb
RthJ-a
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
10
100
K/W
K/W
15/10/2012
COMSET SEMICONDUCTORS
1 | 3
NPN BD136 – BD138 – BD140
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
-ICBO
Ratings
Test Condition(s)
Min Typ Max Unit
BD135
IE=0, -VCB= 30 V BD137
BD139
-
-
-
-
-
-
-
45
60
80
-
-
-
-
-
-
-
-
-
-
0,1
0,1
0,1
10
10
10
10
-
Collector cut-off current
Emitter cut-offcurrent
µA
BD135
IE=0, -VCB = 30V
BD137
Tj= 125°C
BD139
-IEBO
IC=0, -VEB=5 V
BD135
IB=0, -IC=30 mA BD137
BD139
µA
V
Collector-Emitter
sustaning Voltage (*)
-VCEO(SUS)
-
-
Collector-Emitter
saturation Voltage (*)
-VCE(SAT)
-IC=0.5 A, -IB=50 mA
-
-
0,5
V
-VCE=2 V, -IC=5 mA
25
40
63
100
25
-
-
-
-
-
-
-
-
BDxxx
BDxxx -10
BDxxx -16
250
160
250
-
-VCE=2 V
-IC=150 mA
hFE
DC Current Gain (*)
-VCE=2 V, -IC=500 mA
-VCE=2 V, -IC=500 mA
-VCE=5 V, -IC=50 mA
f= 35 MHz
-VBE
fT
Base-Emitter Voltage(*)
Transition frequency
1
V
-
75
-
MHz
(*) Measured under pulse conditions :tP <300µs, δ <2%.
15/10/2012
COMSET SEMICONDUCTORS
2 | 3
NPN BD136 – BD138 – BD140
MECHANICAL DATA CASE TO-126
DIMENSIONS
min
7.4
10.5
2.4
max
7.8
10.8
2.7
A
B
C
D
E
F
0.7
0.9
2.25 typ.
0.49
0.75
G
L
4.4 typ.
15.7 typ.
M
N
P
S
1.27 typ.
3.75 typ.
3.0
3.2
2.54 typ.
Pin 1 :
Emitter
Pin 2 :
Pin 3 :
Collector
Base
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to
change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically
disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not
authorized for use as critical components in life support devices or systems.
www.comsetsemi.com
15/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
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