BD135 [COMSET]
SILICON PLANAR EPITAXIAL POWER TRANSISTORS; 硅平面外延功率晶体管
| 型号： | BD135 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN BD135 – BD137 – BD139
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
The BD135-BD137-BD139 are NPN Transistors
They are recommended for driver stages in hi-fi amplifiers and television circuits.
They are mounted in Jedec TO-126 plastic package.
PNP complements are BD136-BD138-BD140.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
45
60
100
45
60
80
45
60
VCBO
Collector-Base Voltage (IE= 0)
V
VCEO
Collector-Emitter Voltage (IB= 0)
V
V
VCER
Collector-Emitter Voltage (RBE= 1 kΩ)
100
VEBO
IC
Emitter-Base Voltage (IC= 0)
Collector Current
5
1.5
2
0.5
8
V
A
IC
ICM
IB
IB
PT
TJ
Base current
A
Total power Dissipation
Junction Temperature
Storage Temperature
T
mb = 70°C
W
°C
°C
150
-65 to +150
TStg
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-c
RthJ-a
Thermal Resistance, Junction-Case
Thermal Resistance, Junction-ambient in free air
10
100
°C/W
°C/W
25/09/2012
27/08/201225/09/2012
COMSET SEMICONDUCTORS
1 | 3
NPN BD135 – BD137 – BD139
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min
Typ Max Unit
BD135
BD137
BD139
BD135
BD137
BD139
-
-
-
-
-
-
-
45
60
80
-
-
-
-
-
-
-
-
-
-
0,1
0,1
0,1
10
10
10
10
-
IE=0 , VCB= 30 V
Collector cut-off
current
ICBO
µA
IE=0 ,VCB = 30V
Tj= 125°C
IEBO
Emitter cut-offcurrent
IC=0, VEB=5 V
µA
V
BD135
BD137
BD139
Collector-Emitter
sustaning Voltage (1)
VCEO(SUS)
IB=0 , IC=30 mA
-
-
Collector-Emitter
saturation Voltage (1)
VCE(SAT)
IC=0.5 A,IB=50 mA
VCE=2 V, IC=5 mA
-
-
0,5
V
25
40
63
100
25
-
-
-
-
-
-
BDxxx
250
160
250
-
hFE
DC Current Gain (1)
VCE=2 V, IC=150 mA BDxxx -10
BDxxx -16
VCE=2 V, IC=500 mA
Base-Emitter
Voltage(1)
Transition frequency
VBE
fT
VCE=2 V, IC=500 mA
-
-
-
1
-
V
VCE=5 V, IC=50 mA , f= 35 MHz
250
MHz
1. Measured under pulse conditions :tP <300µs, δ <2%.
25/09/2012
COMSET SEMICONDUCTORS
2 | 3
27/08/201225/09/2012
NPN BD135 – BD137 – BD139
MECHANICAL DATA CASE TO-126
DIMENSIONS
min
7.4
10.5
2.4
max
7.8
10.8
2.7
A
B
C
D
E
F
0.7
0.9
2.25 typ.
0.49
4.4 typ.
15.7 typ.
0.75
G
L
M
N
P
S
1.27 typ.
3.75 typ.
3.0
2.54 typ.
3.2
Pin 1 :
Pin 2 :
Pin 3 :
Emitter
Collector
Base
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to
change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically
disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not
authorized for use as critical components in life support devices or systems.
www.comsetsemi.com
info@comsetsemi.com
25/09/2012
COMSET SEMICONDUCTORS
3 | 3
27/08/201225/09/2012
相关型号：
BD135-16
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CENTRAL
BD135-16-BP
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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