2N3700 [COMSET]
SILICON PLANAR EPITAXIAL TRANSISTORS; 硅平面外延晶体管
| 型号： | 2N3700 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON PLANAR EPITAXIAL TRANSISTORS |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN 2N3700
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3700 are NPN transistors mounted in TO-18 metal package with the collector
connected to the case .
They are intended for small signal, low noise industrial applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
80
140
7
V
V
V
A
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
1
@ Tamb = 25°
@ Tcase= 25°
@ Tcase<100°
0.5
1.8
PD
Total Power Dissipation
W
1
TJ
Junction Temperature
200
°C
°C
TStg
Storage Temperature range
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-a
RthJ-c
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
350
97
°C/ W
°C/ W
17/10/2012
COMSET SEMICONDUCTORS
1/3
NPN 2N3700
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
ICBO
IEBO
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage
Collector Base
Breakdown Voltage
Emitter Base Breakdown
Voltage
VCB=90 V, IE=0V
VCB=90 V, IE=0V, Tj=150°C
VBE=5.0 V, IC=0
-
-
-
-
-
-
10
10
10
nA
µA
nA
VCEO (*)
VCBO
IC=30 mA, IB=0
IC=100 µA, IE=0
IE=100 µA, IC=0
80
140
7
-
-
-
-
-
-
V
V
V
VEBO
IC=0.1 mA, VCE=10 V
IC=10 mA, VCE=10 V
IC=150 mA, VCE=10 V
IC=500 mA, VCE=10 V
IC=1A, VCE=10 V
50
90
100
50
-
-
-
-
-
-
300
-
hFE (*)
DC Current Gain
-
15
-
-
IC=150 mA, VCE=10 V
40
-
-
T
amb = -55°
IC=150 mA, IB=15 mA
IC=500 mA, IB=50 mA
-
-
-
-
0.2
0.5
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
VCE(SAT) (*)
VBE(SAT) (*)
fT
V
IC=150 mA, IB=15 mA
-
-
-
100
-
1.1
IC=50 mA, VCE=10 V
f= 20MHz
IC=1 mA, VCE=5.0 V
f= 1 KHz
IE= 0 ,VCB=10 V
f = 1MHz
IC= 0 ,VEB=0.5 V
f = 1MHz
Transition frequency
-
400
-
MHz
-
hfe
Small signal current gain
80
-
Collector-Base
Capacitance
Emitter-Base
Capacitance
CCBO
12
60
-
pF
pF
ps
CEBO
-
-
IC=10 mA, VCE=10 V
f= 4 MHz
rbb’,Cb’c
Feedback time constant
25
400
(*) Pulse conditions : tp < 300 µs, δ =1%
17/10/2012
COMSET SEMICONDUCTORS
2 | 3
NPN 2N3700
MECHANICAL DATA CASE TO-18
DIMENSIONS (mm)
min
max
A
B
C
D
E
F
G
H
I
12.7
-
-
0.9
-
0.49
-
5.3
4.9
5.8
-
-
2.54
-
-
-
1.2
1.16
-
L
45°
Pin 1 :
Pin 2 :
Pin 3 :
Case :
emitter
base
Collector
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
17/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
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