SB140E-G [COMCHIP]
Low VF/ESD Leaded Schottky Barrier Rectifiers;
| 型号： | SB140E-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Low VF/ESD Leaded Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：457K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low VF/ESD Leaded Schottky Barrier Rectifiers
SB120E-G thru SB1100E-G "-G" : RoHS Device
Voltage Range: 20 to 100 V
Current: 1.0 A
DO-41
FEATURES
• Low drop down voltage
• 1.0A operation at TA=75°C with no thermal runaway
• For use in low voltage, high frequency invertors free
wheeling and polarity protection
1.0(25.4) Min.
• Silicon epitaxial planar chips
.107(2.7)
.080(2.0)
• Electrostatic discharge (ESD) test under IEC61000-4-2:
standard: >15KV (air) & >8KV (contact)
• Lead-free part, meet RoHS requirements
.205(5.2)
.160(4.1)
MECHANICAL DATA
• Case: Molded plastic body DO-41
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
1.0(25.4) Min.
.034(0.86)
.028(0.70)
• Weight: 0.012 ounces, 0.34 grams
Unit :inch(mm)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Symbols 120E 140E 145E 150E 160E 180E 1100E Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
20
14
20
40
28
40
45
30
45
50
35
50
60
42
60
80 100 Volts
56 70 Volts
Maximum DC Blocking Voltage
80 100 Volts
Amps
Maximum Average Forward Rectified Current
0.375” (9.5mm) lead length at TA=75°C, See Figure 1
IAV
1.0
30
Peak Forward Surge Current
8.3mS single half sine-wave superimposed on
rated load (JEDEC Method) TL=110°C
IFSM
Amps
Maximum Forward Voltage at 1.0A (Note 1)
VF
IR
0.50
10
0.70
0.5
0.85
Volts
mA
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TA= 25°C
TA=100°C
5
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
CJ
110
pF
RθJA
RθJL
80.0
30.0
°C/W
Operating Junction Temperature Range
TJ
-65 ~ +125
-65 ~ +150
-65 ~ +150
°C
°C
Storage Temperature Range
TSTG
Note 1. Pulse test: 300µS pulse width, 1% duty cycle
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.375” (9.5mm) lead length
Page 1
MDS0906002A
Low VF/ESD Leaded Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES SB120E-G thru SB1100E-G
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
Fig.1 - Forward Current Derating Curve
100
10
1.2
1.0
0.8
SB120E - SB145E
SB150E - SB1100E
0.6
0.4
0.2
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
single phase half wave 60Hz
resistive or inductive load
3.75”(9.5mm) lead length
1
1
10
100
0
25
50
75 100
125 150 175
Lead Temperature ( °C)
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneour Forward
Characteristics
Fig. 4A - Typical Reverse Characteristics
SB120E - SB145E
10
1.0
0.1
100
10
pulse width =300µS
1% duty cycle, Tj=25°C
SB120E - SB145E
TJ=125°C
TJ=75°C
1.0
0.1
SB150E - SB160E
SB180E - SB1100E
0.01
TJ=25°C
0.01
0
0.001
0
20
40
60
80
100
120
140
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (Volts)
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
Fig. 4B - Typeical Reverse Characteristic
SB150E - SB1100E
1000
1000
100
TJ=150°C
TJ=125°C
10
100
TJ=100°C
1.0
0.1
TJ=25°C
f=1.0MHz
TJ=25°C
10
0.1
0.01
1.0
10
100
0
20
40
60
80
100
Reverse Voltage (Volts)
Percent of Rated Peak Reverse Voltage ( %)
Page 2
MDS0906002A
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