MMBTA43 [COMCHIP]
High Voltage Transistors; 高电压晶体管
| 型号： | MMBTA43 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | High Voltage Transistors |
| 文件： | 总3页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage Transistors
CCOOMMCCHHIIPP
www.comchiptech.com
MMBTA42, MMBTA43
NPN Silicon Type
Features
This device is designed for application as a
video output to drive color CRT and other
high voltage applications
SOT-23
.119 (3.0)
.110 (2.8)
.020 (0.5)
Top View
3
1
2
COLLECTOR
3
.037(0.95)
.037(0.95)
1
BASE
2
EMITTER
.103 (2.6)
.086 (2.2)
.020 (0.5) .020 (0.5)
Dimensions in inches (millimeters)
MAXIMUM RATINGS
Rating
Symbol MMBTA42 MMBTA43
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current−Continuous
V
V
V
300
300
6.0
200
200
6.0
Vdc
Vdc
CEO
CBO
EBO
Vdc
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board (Note 1)
P
D
225
mW
T = 25°C
A
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction−to−Ambient
R
q
JA
Total Device Dissipation
P
D
Alumina Substrate (Note 2)
T = 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
q
JA
T , T
J
−55 to
+150
stg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Page 1
MDS0605002A
High Voltage Transistors
CCOOMMCCHHIIPP
www.comchiptech.com
O
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
MMBTA42
MMBTA43
300
200
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
Vdc
MMBTA42
MMBTA43
300
200
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
6.0
−
Vdc
E
C
Collector Cutoff Current
(V = 200 Vdc, I = 0)
I
mAdc
CBO
MMBTA42
MMBTA43
−
−
0.1
0.1
CB
E
(V = 160 Vdc, I = 0)
CB
E
Emitter Cutoff Current
(V = 6.0 Vdc, I = 0)
I
mAdc
EBO
MMBTA42
MMBTA43
−
−
0.1
0.1
EB
C
(V = 4.0 Vdc, I = 0)
EB
C
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
−
(I = 1.0 mAdc, V = 10 Vdc)
Both Types
Both Types
25
40
−
−
C
CE
(I = 10 mAdc, V = 10 Vdc)
C
CE
(I = 30 mAdc, V = 10 Vdc)
MMBTA42
MMBTA43
40
40
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = 20 mAdc, I = 2.0 mAdc)
V
Vdc
Vdc
CE(sat)
MMBTA42
MMBTA43
−
−
0.5
0.5
C
B
Base−Emitter Saturation Voltage
(I = 20 mAdc, I = 2.0 mAdc)
V
−
0.9
BE(sat)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
50
−
MHz
pF
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
C
CE
Collector−Base Capacitance
(V = 20 Vdc, I = 0, f = 1.0 MHz)
C
cb
MMBTA42
MMBTA43
−
−
3.0
4.0
CB
E
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Page 2
MDS0605002A
High Voltage Transistors
CCOOMMCCHHIIPP
www.comchiptech.com
Rating and Characteristic Curves (MMBTA42, MMBTA43)
120
100
V
CE
= 10 Vdc
T = +125°C
J
80
60
25°C
40
20
0
−55°C
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
100
80
70
60
50
40
C
eb
@ 1MHz
10
1.0
0.1
C
cb
@ 1MHz
30
20
10
T = 25°C
J
V
= 20 V
f = 20 MHz
CE
0.1
1.0
10
100
1000
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 2. Capacitance
Figure 3. Current−Gain − Bandwidth
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
@ 25°C, I /I = 10
@ 125°C, I /I = 10
C B
CE(sat)
C B
CE(sat)
CE(sat)
BE(sat)
V
V
V
V
V
@ −55°C, I /I = 10
C B
@ 25°C, I /I = 10
C B
@ 125°C, I /I = 10
C B
BE(sat)
BE(sat)
BE(on)
@ −55°C, I /I = 10
C B
@ 25°C, V = 10 V
CE
V
V
@ 125°C, V = 10 V
CE
BE(on)
@ −55°C, V = 10 V
CE
BE(on)
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 4. “ON” Voltages
Page 3
MDS0605002A
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