KBU608-G [COMCHIP]
Silicon Bridge Rectifiers; 硅桥式整流器
| 型号： | KBU608-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Silicon Bridge Rectifiers |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Bridge Rectifiers
KBU600-G thru 610-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
A
Forward Current: 6.0 Amp
C
B
D
Features:
Diffused Junction
KBU
Min
Dim
A
Max
K
L
Low Forward Voltage Drop
High Current Capability
High Reliability
22.7 23.70
_
_
_
+
E
B
3.80
4.20
1.70
4.10
4.70
2.20
C
D
E
G
H
J
K
L
M
N
P
High Surge Current Capability
Ideal for Printed Circuit Boards
10.30 11.30
J
G
4.50
4.60
25.40
-
6.80
5.60
-
Mechanical Data:
H
19.30
Case: Molded Plastic
M
16.80 17.80
Terminals: Plated Leads Solderable per MIL
STD-202, Method 208
Weight: 1.7 grams (approx.)
Mounting Position: Any
6.60
4.70
1.20
7.10
5.20
1.30
All Dimensions in mm
Marking: Type Number
N
P
KBU
KBU
KBU
KBU
KBU
KBU
KBU
CHARACTERISTICS
UNIT
V
Symbol
600-G 601-G 602-G 604-G 606-G 608-G 610-G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
50
35
100
70
200
140
400
600
420
800
560
1000
700
RWM
V
R
V
RMS Reverse Voltage
280
6.0
V
A
R(RMS)
IO
Average Rectified Output Current @ T = 100ºC
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half Sine-Wave Superimposed on rated load
(JEDEC Method)
I
FSM
250
1.0
A
V
V
Forward Voltage (per element) @ I =3.0A
FM
F
Peak Reverse Current
@T =25ºC
C
10
1.0
uA
mA
I
R
At Rated DC Blocking Voltage @T =100ºC
C
I t
166
4.2
A2S
2
Rating for Fusing (t<8.3ms) (Note1)
Typical Thermal Resistance (Note2)
Operating and Storage Temperature Range
Rθ
K/W
JC
T T
j
STG
-65 to +150
ºC
Note:
1. Non-repetitive for t>1ms and <8.3ms.
2. Thermal resistance junction to ambient mounted on PC board with 13.0x13.0x0.03mm thick land areas.
“-G” suffix designated RoHS compliant version
.
.
.
Page1
Comchip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com
Silicon Bridge Rectifiers
KBU600-G thru 610-G (RoHS Device)
100
10
6
5
4
3
2
1
1.0
0.1
Tj = 25ºC
Pulse Width = 300ms
Single Phase Half Wave
60Hz Resistive or Inductive Load
0
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
20 40
60
80 100 120 140
V , Instanteous FWD Voltage (V)
F
T , CASE TEMPERATURE (ºC)
c
Fig.2 Typical Forward Characteristics, per element
Fig. 1 Forawrd Current Derating Curve
400
100
250
200
150
100
50
Tj=25ºC
8.3ms Single Half Sine-Wave
Jedec Method
0
0
1
10
V , Reverse Voltage (V)
100
1
10
100
Number of Cycles at 60Hz
R
Fig 4. Typical Junction Capacitance Per Element
Fig.3 MAx Non-Repetitive FWD Surge Current
“-G” suffix designated RoHS compliant version
.
.
.
Page2
Comchip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com
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WTE
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