CZRA3011 [COMCHIP]
Surface Mount Zener Diode; 表面贴装稳压二极管
| 型号： | CZRA3011 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Surface Mount Zener Diode |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSuurffaace Moount Zener Diode
CCOOMMCCHHIIPP
www.comchip.com.tw
CZRA3011 Thru CZRA3100
Voltage: 11 - 100 Volts
Power: 3.0 Watt
Features
- For surf ace mounted applications in order to
optimize board space
- Low profile package
- Built-in strain relief
DO-214AC (SMA)
- Glass passivated junction
- Low inductance
0.067(1.70)
0.051(1.29)
0.110(2.79)
0.086(2.18)
- Excellent clamping capability
- Typical ID less than 1uA above 11V
0.180(4.57)
0.160(4.06)
- High temperature soldering 260°C /10
seconds at terminals
0.012(0.31)
0.006(0.15)
- Plastic package has underwriters laboratory
flammability classification 94V-O
0.091(2.31)
0.067(1.70)
Mechanical data
- Case: JEDEC DO-214AC, Molded plastic
over passivated junction
0.008(0.20)
0.004(0.10)
0.059(1.50)
0.035(0.89)
0.209(5.31)
0.185(4.70)
- Terminals: Solder plated, solderable per MIL-
STD-750, method 2026
- Polarity: Color band denotes positive end
(cathode) except Bidirectional
Dimensions in inches and (millimeters)
- Standard Packaging: 12mm tape (EIA-481)
- Weight: 0.002 ounce, 0.064 gram
Maximum Ratings and Electrical Characterics
Ratings at 25°C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation (Note A)
Derate above 75
Symbol
Value
3
24
Units
Watts
mW/°C
PD
Peak forward Surge Current 8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
IFSM
15
Amps
°C
TJ,TSTG
-55 to +150
Page 1
MDS0211015A
SSuurrffaaccee MMoouunntt ZZeenneerr DDiiooddee
CCOOMMCCHHIIPP
www.comchip.com.tw
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) (VF=1.2Volts Max, IF=500mA for all types.)
Nominal
Zener
Voltage VZ
Maximum Zener Impedance
Surge
Current
@TA=25°C
(Note 4.)
Test
current
IZT
Leakage Current Maximum
Zener
(Note 3.)
Device
(Note 1.)
Current IZM
@ IZT
(Note 2.)
(Volts)
11
ZZT @ IZT ZZK @ IZK
IR
IZK
VR
(mA)
68
63
58
53
50
47
44
42
40
37
34
31
28
27
25
23
21
19
17
16
15
13
12
11
10
9.1
8.2
7.5
(Ohms)
4
4.5
4.5
5
5.5
5.5
6
(Ohms)
700
700
700
700
700
700
750
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
(uA)
1
1
(Volts)
Madc
225
246
208
193
180
169
150
159
142
135
123
112
100
96
90
82
75
69
63
57
53
48
Ir - mA
1.82
1.66
1.54
1.43
1.33
1.25
1.18
1.11
1.05
1.00
0.91
0.83
0.74
0.71
0.67
0.61
0.56
0.51
0.45
0.42
0.39
0.36
0.32
0.29
0.27
0.24
0.22
0.20
CZRA3011
CZRA3012
CZRA3013
CZRA3014
CZRA3015
CZRA3016
CZRA3017
CZRA3018
CZRA3019
CZRA3020
CZRA3022
CZRA3024
CZRA3027
CZRA3028
CZRA3030
CZRA3033
CZRA3036
CZRA3039
CZRA3043
CZRA3047
CZRA3051
CZRA3056
CZRA3062
CZRA3068
CZRA3075
CZRA3082
CZRA3091
CZRA3100
8.4
9.1
9.9
12
13
14
15
16
17
18
19
20
22
24
27
28
30
33
36
39
43
47
51
56
62
68
75
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
20.6
21
22.5
25.1
27.4
29.7
32.7
35.6
38.8
42.6
47.1
51.7
56
6
7
7
8
9
10
12
16
20
22
28
33
38
45
50
55
70
85
95
115
160
44
40
36
33
30
27
82
91
100
62.2
69.2
76
NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms +- 10ms
from the diode body, and an ambient temperature of 25 °C (+8°C , -2°C ).
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage,
which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is
superimposed on IZT or IZK.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is
maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse
of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual
device capability is as described in Figure 3.
Page 2
MDS0211015A
SSuurrffaaccee MMoouunntt ZZeenneerr DDiiooddee
CCOOMMCCHHIIPP
www.comchip.com.tw
Rating and Characteristic Curves (CZRA3011 Thru CZRA3100)
30
20
D = 0.5
0.2
10
7
5
0.1
3
2
0.05
0.02
NOTE BELOW 0.1 SECOND,
THERMAL RESPONSE
CURVE IS APPLICABLE TO
ANY LEAD LENGTH (L)
1
0.7
0.5
SINGLE PULSE
TJL = JL(t)PPK
REPETITIVE PULSES TJL =
JL(t,D)PPK
0.01
D = 0
0.3
0.0001 0.0002 0.0005 0.001 0.002
0.005 0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Fig. 2-TYPICAL THERMAL RESPONSE L,
1K
500
300
200
RECTANGULAR NONREPETITIVE
WAVEFORM TJ = 25°C PRIOR TO
INITIAL PULSE
0.1
0.05
0.03
0.02
100
50
0.01
0.005
0.003
0.002
30
20
0.001
0.0005
0.0003
0.0002
0.0001
10
.1
.2 .3
5
1
2 3 5
10
20
50
100
1
2
5
10
20
50
100
200
500
1K
P.W. PULSE WIDTH (ms)
NOMINAL VZ (VOLTS)
Fig. 3-MAXIMUM SURGE POWER
Fig. 4-TYPICAL REVERSE LEAKAGE
8
6
200
100
4
2
RANGE
50
40
30
RANGE
0
-2
-4
20
3
4
6
8
10
12
10
0
20
40
60
80 100
VZ, ZENER VOLTAGE @IZT (VOLTS)
VZ, ZENER VOLTAGE @IZT (VOLTS)
Fig. 5 - UNITS TO 12 VOLTS
Fig. 6 - UNITS 10 TO 100 VOLTS
Page 3
MDS0211015A
SSuurrffaaccee MMoouunntt ZZeenneerr DDiiooddee
CCOOMMCCHHIIPP
www.comchip.com.tw
Rating and Characteristic Curves (CZRA3011 Thru CZRA3100)
100
100
50
30
20
10
50
30
20
10
5
3
2
5
3
2
1
1
0.5
0.3
0.2
0.5
0.3
0.2
0.1
0
0.1
0
1
2
3
4
5
6
7
8
9
10
10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
80
70
60
50
40
30
20
10
0
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
Fig. 9 -TYPICAL THERMAL RESISTANCE
Page 4
MDS0211015A
Surface Mount Zener Diode
CCOOMMCCHHIIPP
www.comchip.com.tw
∆TJL is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
∆TJL = θLAPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ (∆TJL ) may be estimated.
Changes in voltage, Vz, can then be found from:
∆V = θVZ ∆TJ
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA
θLA is the lead-to-ambient thermal resistance (°C/W)
and PD is the power dissipation. The value for θLA will
vary and depends on the device mounting method.
θLA is generally 30-40 °C/W for the various chips and
tie points in common use and for printed circuit board
wiring.
θVZ , the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure 3 be
exceeded.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible to
the tie point. The thermal mass connected to the tie point
is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result
of pulsed operation once steady-state conditions are
achieved. Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + ∆TJL
MDS0211015A
Page 5
相关型号：
©2020 ICPDF网 联系我们和版权申明