CJA03N10-HF [COMCHIP]
MOSFET;
| 型号： | CJA03N10-HF |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | MOSFET |
| 文件： | 总4页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
CJA03N10-HF
N-Channel
RoHS Device
Halogen Free
1 : Gate
SOT-89-3L
Features
2 : Drain
3 : Source
0.181(4.60)
0.173(4.40)
-Special process technology for high ESD capability.
-High density cell design for extremely low RDS(ON).
-Good stability and uniformity with high EAS.
-Excellent package for good heat dissipation.
0.061(1.55)
REF.
0.102(2.60)
0.091(2.30)
0.167(4.25)
0.155(3.94)
1
2
3
0.020(0.52)
0.013(0.32)
0.023(0.58)
0.016(0.40)
Circuit Diagram
0.060(1.50)
TYP.
D
0.118(3.00)
TYP.
0.063(1.60)
0.055(1.40)
G
0.017(0.44)
0.014(0.35)
0.047(1.20)
0.035(0.90)
S
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Parameter
Value
Units
V
Drain-source voltage
Gate-source voltage
Continuous drain current
VDS
VGS
ID
100
±20
V
3
20
A
Pulsed drain current (Note 1)
Power dissipation
IDM
PD
A
0.5
W
Thermal resistance from Junction to ambient (Note 2)
Junction temperature
RΘJA
TJ
250
°C/W
°C
°C
150
Storage temperature
Note:
TSTG
-55 to +150
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-JTR11
Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics ( TA=25°C unless otherwise noted)
Symbol
Conditions
Min
Typ
Max
Unit
Parameter
Static Characteristics
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage (note 1)
Drain-source on-resistance (note 1)
Forward transconductance (note 1)
Diode forward voltage (note 1)
Dynamic Characteristics (note 2)
Input capacitance
VGS=0V, ID=250μA
V(BR)DSS
100
V
1
V
μA
VDS=100V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS, ID=250μA
VGS=10V, ID=5A
VDS=5V, ID=2.9A
IS=3A, VGS=0V
IDSS
IGSS
±100
2
nA
V
VGS(th)
1
3
RDS(ON)
gFS
140
mΩ
S
VSD
1.2
V
Ciss
Coss
Crss
690
120
90
Output capacitance
pF
VDS=25V, VGS=0V, f=1MHz
Reverse transfer capacitance
Switching Characteristics (note 2)
Turn-on delay time
td(on)
11
7.4
35
Turn-on rise time
tr
VDS=30V, VGS=10V,
ns
ID=2A, RGEN=2.5Ω, RL=15Ω
Turn-off delay time
td(off)
Turn-off fall time
Total gate charge
Gate-source charge
Gate-drain charge
Note:
tf
9.1
15.5
3.2
4.7
Qg
Qgs
Qgd
VDS=30V, VGS=10V, ID=3A
nC
1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2%
2. Guaranteed by design, not subject to producting.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-JTR11
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
1
2
0
o
D2
D
D1
W1
SYMBOL
A
B
C
d
D
D1
D2
(mm)
4.85 ± 0.10
4.45 ± 0.10
1.85 ± 0.10
1.50 + 0.10
180 ± 2.00
60.00 ± 1.00
R32.00 ± 1.00
1.260 ± 0.039
SOT-89-3L
SOT-89-3L
(inch)
0.191 ± 0.004
0.175± 0.004
0.073 ± 0.004
0.059 + 0.004
7.087 ± 0.079
2.362 ± 0.039
SYMBOL
(mm)
E
F
P
P0
P1
W
W1
+
12.00 0.30 /–0.10
1.75 ± 0.10
5.50 ± 0.10
8.00 ± 0.10
4.00 ± 0.10
0.158 ± 0.004
2.00 ± 0.10
16.50 ± 1.00
+
(inch)
0.069 ± 0.004
0.217 ± 0.004
0.315 ± 0.004
0.079 ± 0.004 0.472 0.012 /–0.004
0.650 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
QW-JTR11
Comchip Technology CO., LTD.
MOSFET
Marking Code
Marking Code
Part Number
CJ A
03N10
CJ A
CJA03N10-HF
.03N10
xx/xxx = Product type marking code
Suggested PAD Layout
A
B
SOT-89-3L
SIZE
(mm)
2.60
1.40
4.40
3.20
1.90
1.40
0.80
0.90
1.50
(inch)
0.102
0.055
0.173
0.126
0.075
0.055
0.032
0.035
0.059
A
B
C
D
E
F
G
H
I
C
D
45°
E
F
G
H
I
Standard Packaging
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
1,000
SOT-89-3L
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 4
QW-JTR11
Comchip Technology CO., LTD.
相关型号：
©2020 ICPDF网 联系我们和版权申明