CJ3139KDW-G [COMCHIP]
MOSFET;
| 型号： | CJ3139KDW-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | MOSFET |
| 文件： | 总5页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Comchip
S M D D i o d e S p e c i a l i s t
CJ3139KDW-G (Dual P-Channel )
RoHS Device
SOT-363
0.087(2.20)
0.079(2.00)
V(BR)DSS
RDS(on)MAX
520mΩ @ -4.5V
ID
6
1
5
4
3
0.053(1.35)
0.045(1.15)
700mΩ @ -2.5V
-20V
-0.66A
2
0.055(1.40)
0.047(1.20)
950mΩ(TYP) @ -1.8V
0.006(0.15)
0.003(0.08)
0.045(1.15)
0.041(1.05)
0.096(2.45)
0.085(2.15)
Features
- High-side switching
0.018(0.46)
0.010(0.26)
0.004(0.10)
0.000(0.00)
0.014(0.35)
0.006(0.15)
- Low on-resistance
- Low threshold
Dimensions in inches and (millimeter)
- Fast switching speed
Circuit diagram
Mechanical data
- Case: SOT-363, molded plastic.
G : Gate
S : Source
D1
S2
G2
6
4
5
D : Drain
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Weight: 0.006 grams (approx.)
3
2
1
D2
S1
G1
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain-source voltage
VDSS
VGS
-20
±12
V
V
Typ. Gate-source voltage
Drain current-Continuous
ID(DC)
IDM(pulse)
PD
-0.66
A
Drain current-pulsed (note1)
Power dissipation (note 2)
-2.64
A
150
mW
°C/W
°C
°C
Thermal resistance from junction to ambient
Junction temperature range
Storage temperature range
RΘJA
TJ
833
-40 to +150
-55 to +150
TSTG
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-BTR52
Comchip Technology CO., LTD.
MOSFET
Comchip
S M D D i o d e S p e c i a l i s t
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Typ
Parameter
Conditions
Min
Max
Unit
On/Off States
Drain-source breakdown voltage
Gate threshold voltage (note 3)
Gate-body leakage current
VGS = 0V , ID = -250µA
VDS = VGS , ID = -250µA
VGS = ±10V, VDS = 0V
VDS = -20V , VGS = 0V
VGS = -4.5V , ID = -1A
V(BR) DSS
VGS(th)
IGSS
-20
V
V
-0.35
-1.1
±20
-1
µA
µA
Zero gate voltage drain current
IDSS
520
700
Drain-source on-state resistance (note 3)
RDS(on)
VGS = -2.5V , ID = -800mA
VGS = -1.8V , ID = -500mA
VDS = -10V , ID = -540mA
mΩ
S
950
gfs
Forward transconductance
Dynamic characteristics (note 4)
Input capacitance
0.8
ciss
Coss
Crss
170
25
VDS = -16V , VGS = 0V
f=1MHZ
Output capacitance
pF
Reverse transfer capacitance
Switching time (note4)
Turn-on delay time
15
td(on)
9
Rise time
tr
5.8
VDD = -10V, ID = -200mA
VGS = -4.5V, RG = 10Ω
nS
V
Turn-off delay time
td(off)
32.7
20.3
Fall time
tf
Drain-source diode characteristics
Drain-source diode forward voltage
(note 3)
IS = -0.5A , VGS = 0V
VSD
-1.2
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperture.
2. This test is performed with no heat sink at Ta=25°C.
3. Pulse test: Pulse width≤300µs, Duty cycle≤0.5%.
4. These parameters have no way to verify.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-BTR52
Comchip Technology CO., LTD.
MOSFET
Comchip
S M D D i o d e S p e c i a l i s t
RATING AND CHARACTERISTIC CURVES (CJ3139KDW-G)
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
-0.0
-3.0
VDS= -5V
VGS= -10V
Pulsed
VGS= -4.5V
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
VGS= -3V
Ta=25°C
VGS= -2.5V
Ta=100°C
VGS= -1.5V
-0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
0
-1
-2
-3
-4
-5
Drain to Source Voltage, VDS (V)
Gate to Source Voltage, VGS (V)
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — I
D
2.0
1.6
1.2
0.8
2.0
1.6
Ta=25°C
Pulsed
VGS= -1.8V
1.2
0.8
0.4
0
VGS= -2.5V
0.4
0.0
VGS= -4.5V
ID = -0.8A
-1
-2
-3
-4
-5
-6
0
-0.4
-0.8
-1.2
-1.6
-2.0
Drain Current, ID (A)
Gate to Source Voltage, VGS (V)
Fig.6 - Threshold Voltage
Fig.5 - I
S
— VSD
-3
-1
-0.8
-0.7
-0.1
ID = -250uA
-0.6
-0.5
-0.4
-0.01
-1E-3
-1E-4
-0.4
-0.8
-1.2
-1.6
-2.0
25
50
75
100
125
Source to Drain Voltage, VSD (V)
Junction Temperature, TJ (°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
QW-BTR52
Comchip Technology CO., LTD.
MOSFET
Comchip
S M D D i o d e S p e c i a l i s t
Reel Taping Specification
P0
P1
W
C
A
P
1
2
0
o
D2
D1
D
W1
SYMBOL
(mm)
A
B
C
d
D
D1
D2
SOT-363
SOT-363
2.25 ± 0.05
2.55 ± 0.05
1.20 ± 0.05
1.50 ± 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.089 ± 0.002
0.100 ± 0.002
0.047 ± 0.002
0.059 ± 0.004
7.008 ± 0.079
0.512 ± 0.039
2.142 ± 0.039
SYMBOL
(mm)
E
F
P
P0
P1
W
W1
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30/-0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.315 + 0.012/-0.004 0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 4
QW-BTR52
Comchip Technology CO., LTD.
MOSFET
Marking Code
6
1
5
4
3
Marking Code
39K
Part Number
39K
.
CJ3139KDW-G
2
Suggested PAD Layout
C
SOT-363
SIZE
(mm)
0.80
0.40
(inch)
0.032
0.016
A
A
B
C
D
E
0.65
1.94
2.74
0.026
0.076
0.108
D
E
B
Standard Packaging
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
3,000
SOT-363
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 5
QW-BTR52
Comchip Technology CO., LTD.
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