CFRC302 [COMCHIP]
SMD Fast Recovery Rectifier; 贴片快恢复整流二极管型号: | CFRC302 |
厂家: | COMCHIP TECHNOLOGY |
描述: | SMD Fast Recovery Rectifier |
文件: | 总2页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SSMMDD FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchip.com.tw
CFRC301 Thru CFRC307
Reverse Voltage: 50 - 1000 Volts
Forward Current: 3.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
SMC/DO-214AB
Plastic package has Underwriters Lab.
flammability classification 94V-0
Fast recovery time: 150 - 500 nS
Low leakage current
0.124(3.15)
0.108(2.75)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
Mechanical data
0.012(0.31)
0.006(0.15)
Case: JEDEC DO-214AB molded plastic
0.103(2.62)
0.079(2.00)
Terminals: solderable per MIL-STD-750,
method 2026
0.008(0.20)
0.050(1.27)
0.030(0.76)
Polarity: Color band denotes cathode
end
0.0203(0.10)
0.320(8.13)
0.305(7.75)
Mounting position: Any
Dimensions in inches and (millimeter)
Approx. Weight: 0.21 gram
Maximum Ratings and Electrical Characterics
CFRC
301
CFRC CFRC
CFRC
304
CFRC
305
CFRC
306
CFRC
307
Unit
Symbol
VRRM
VDC
Parameter
302
303
200
400
400
280
600
600
420
50
50
35
800
800
560
1000
1000
700
Max. Repetitive PeakReverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
100
V
V
V
200
100
70
VRMS
140
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
superimposed on rateload
( JEDEC method)
IFSM
A
100
I o
3.0
Max. Average Forward Current
A
Max. Instantaneous ForwardCurrent
at 3.0 A
1.3
V F
V
Trr
Reverse Recovery Time
100
nS
250
500
Max. DC ReverseCurrent at RatedDC
I R
5.0
50
Blocking Voltage
Ta=25 C
Ta=100C
uA
50
R
JA
Max. Thermal Resistance(Note 1)
Operating Junction Temperature
Storage Temperature
C/W
- 5 5 t o + 1 5 0
T j
C
- 5 5 t o + 1 5 0
TSTG
C
Note 1: Thermal resistance from junction to ambient.
Page 1
MDS0210012B
SSMMDD FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchip.com.tw
Rating and Characteristic Curves (CFRC301 Thru CFRC307)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
1000
100
Tj=125 C
10
100
10
1
0.1
1.0
Tj=25 C
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0
0.01
30
60
90
120
150
0
0.4
0.8
1.2
1.6
2.0
Forward Voltage (V)
Percent of RatedPeak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
140
100
8.3mS Single HalfSine
Wave JEDEC methode
Tj=25 C
f=1.0MHz
120
100
80
Vsig=50mV p-p
80
60
60
40
Tj=25 C
40
20
20
0
5
0.1
1.0
10
100
1000
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cyclesat 60Hz
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
3.5
trr
50
W
10W
NONINDUCTIVE
3.0
2.5
2.0
1.5
NONINDUCTIVE
|
|
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|
|
|
|
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+0.5A
(
)
(+)
0
D.U.T.
25Vdc
PULSE
GENERATOR
(NOTE 2)
(approx.)
-0.25A
(
)
(+)
Single Phase
1.0
1W
OSCILLISCOPE
(NOTE 1)
NON-
Half Wave 60Hz
INDUCTIVE
0.5
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
0
0
25
50
75
100 125 150 175
1cm
Ambient Temperature ( C)
SET TIME BASE FOR
50 / 10ns / cm
Page 2
MDS0210010B
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