CDBU54-HF [COMCHIP]
SMD Schottky Barrier Diode; SMD肖特基势垒二极管
| 型号： | CDBU54-HF |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Schottky Barrier Diode |
| 文件： | 总4页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Schottky Barrier Diode
SMD Diodes Specialist
(RoHS Device)
CDBU54-HF
VR = 30 Volts
Io = 200 mA
Features
Halogen free.
0603(1608)
0.071(1.80)
0.063(1.60)
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
0.039(1.00)
0.031(0.80)
Mechanical data
0.033(0.85)
0.027(0.70)
Case: 0603(1608) standard package,
molded plastic.
0.014(0.35) Typ.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.012 (0.30) Typ.
Marking code: cathode band & BF
Mounting position: Any
0.028(0.70) Typ.
Weight: 0.003 gram(approx.).
Dimensions in inches and (millimeter)
O
Maximum Rating (at TA=25 C unless otherwise noted)
Symbol
Min Typ Max Unit
Parameter
Peak reverse voltage
Reverse voltage
Conditions
VRM
30
V
VR
30
V
RMS reverse voltage
VR(RMS)
IO
21
200
0.3
V
mA
A
Average forward rectified current
Repetitive peak forward current
IFRM
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Forward current,surge peak
IFSM
0.6
A
Power dissipation
PD
TSTG
Tj
150
mW
O
Storage temperature
Junction temperature
-65
+125
+125
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Typ
Symbol
Parameter
Conditions
Min
Max Unit
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
0.24
0.32
Forward voltage
VF
V
0.4
0.5
1
Reverse current
VR = 25V
IR
2
10
5
uA
pF
Capacitance between terminals
f = 1 MHz, and 1 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
CT
Reverse recovery time
Trr
nS
REV:A
Page 1
QW-G1017
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBU54-HF)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1m
1000
100
10
125OC
100u
10u
1u
75OC
1
25OC
100n
10n
C
O
O
C
O
C
-25OC
5
5
5
2
7
2
-
0.1
0
0.2
0.4
0.6
0.8
0
5
10
15
20
25
30
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between
Fig.4 - Current derating curve
terminals characteristics
120
14
12
Mounting on glass epoxy PCBs
f=1MHz
TA=25OC
100
80
10
8
60
40
20
0
6
4
2
0
0
5
10
15
20
25
30
0
25
50
75
100
125 150
O
Reverse voltage (V)
Ambient temperature ( C)
REV:A
Page 2
QW-G1017
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
d
P0
P1
T
E
F
Index hole
W
B
Polarity
C
P
A
1
2
0
o
D2
D
D1
W1
Trailer
Device
Leader
.......
.......
.......
.......
.......
.......
.......
.......
Start
End
10 pitches (min)
10 pitches (min)
Direction of Feed
1
2
SYMBOL
A
B
C
d
D
D
D
(mm)
1.00 ± 0.10
1.85 ± 0.10
1.00 ± 0.10
1.55 ± 0.05
178 ± 1
60.0 MIN.
13.0 ± 0.20
U/0603
U/0603
(inch)
0.039 ± 0.004
0.073 ± 0.004
0.039± 0.004
0.061 ± 0.002
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
0
1
1
SYMBOL
E
F
P
P
P
T
W
W
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:A
Page 3
QW-G1017
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
Marking Code
BF
Park Number
CDBU54-HF
BF
Suggested PAD Layout
U/0603
SIZE
(mm)
(inch)
D
A
A
B
C
1.70
0.067
0.60
0.80
0.024
0.031
E
C
D
E
2.30
1.10
0.091
0.043
B
Standard Package
Qty per Reel
(Pcs)
Reel Size
(inch)
Case Type
U/0603
4000
7
REV:A
Page 4
QW-G1017
Comchip Technology CO., LTD.
相关型号：
©2020 ICPDF网 联系我们和版权申明