CDBQR0140R-HF_12 [COMCHIP]
SMD Schottky Barrier Diode; SMD肖特基势垒二极管
| 型号： | CDBQR0140R-HF_12 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Schottky Barrier Diode |
| 文件： | 总4页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Schottky Barrier Diode
CDBQR0140L
Io = 100 mA
VR = 40 Volts
RoHS Device
0402/SOD-923F
Features
-Low forward voltage.
0.041(1.05)
0.037(0.95)
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.026(0.65)
0.022(0.55)
Mechanical data
0.022(0.55)
0.018(0.45)
-Case: 0402/SOD-923F standard package,
molded plastic.
0.012(0.30) Typ.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & B8
-Mounting position: Any.
0.020(0.50) Typ.
-Weight: 0.001 gram(approx.).
Dimensions in inches and (millimeter)
O
Maximum Rating (at TA=25 C unless otherwise noted)
Symbol
Parameter
Repetitive Peak reverse voltage
Reverse voltage
Conditions
Min Typ Max Unit
VRRM
VR
45
40
V
V
Average forward rectified current
IO
100
mA
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Forward current,surge peak
Power Dissipation
IFSM
PD
1
A
125
mW
O
Storage temperature
Junction temperature
TSTG
Tj
-40
+125
+125
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Typ
Symbol
Parameter
Conditions
Min
Max Unit
IF = 100mA
IF = 10mA
0.55
0.34
Forward voltage
VF
V
Reverse current
VR = 10V
IR
30
uA
pF
Capacitance between terminals
f = 1 MHz, and 10 VDC reverse voltage
CT
6
REV:C
Page 1
QW-A1116
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBQR0140L)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
10m
1m
1000
100
75OC
25OC
100u
10u
1u
10
1
O
C
C
O
O
C
100n
-25OC
C
O
5
5
5
5
2
7
2
2
1
-
10n
1n
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
15
12
100
80
9
6
60
40
20
0
3
0
0
10
20
30
40
0
25
50
75
100 125 150
O
Reverse voltage (V)
Ambient temperature ( C)
REV:C
Page 2
QW-A1116
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
d
P0
P1
T
E
F
Index hole
W
B
Polarity
C
P
A
1
2
0
o
D2
D
D1
W1
Trailer
.......
Device
Leader
.......
.......
.......
.......
.......
Start
End
.......
.......
10 pitches (min)
10 pitches (min)
Direction of Feed
1
2
SYMBOL
A
B
C
d
D
D
D
0402
(mm)
0.75 ± 0.10
1.15 ± 0.10
0.60 ± 0.10
1.55 + 0.10
178 ± 1
60.0 MIN.
13.0 ± 0.20
(SOD-923F)
(inch)
0.026 ± 0.004
0.045 ± 0.004
0.024 ± 0.004
0.061 + 0.004
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
0
1
1
SYMBOL
E
F
P
P
P
T
W
W
0402
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.22 ± 0.05
8.00 ± 0.20
13.5 MAX.
(SOD-923F)
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:C
Page 3
QW-A1116
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
Marking Code
B8
Part Number
CDBQR0140L
B8
Suggested PAD Layout
0402/SOD-923F
SIZE
D
A
(mm)
(inch)
A
B
0.750
0.030
E
0.500
0.700
0.020
0.028
C
C
D
E
B
1.250
0.250
0.049
0.010
Standard Package
Qty per Reel
Reel Size
(inch)
Case Type
(Pcs)
0402/SOD-923F
5000
7
REV:C
Page 4
QW-A1116
Comchip Technology CO., LTD.
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