CDBGBSC201200-G [COMCHIP]
Dual Silicon Carbide Power Schottky Diode;
| 型号： | CDBGBSC201200-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Dual Silicon Carbide Power Schottky Diode 二极管 |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Dual Silicon Carbide Power Schottky Diode
CDBGBSC201200-G
Reverse Voltage: 1200V
Forward Current: 20A
RoHS Device
TO-247
0.640(16.26)
0.620(15.75)
Features
- Rated to 1200 at 20 Amps
- Short recovery time
- High speed switching possible
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
0.209(5.30)
0.185(4.70)
0.244(6.20)
0.213(5.40)
0.144(3.65)
0.140(3.55)
4
0.216(5.49)
0.170(4.32)
0.845(21.46)
0.819(20.80)
1
2
3
Circuit diagram
0.800(20.32)
0.780(19.81)
0.084(2.13)
0.065(1.65)
C(4)
0.031(0.80)
0.016(0.40)
0.055(1.40)
0.039(1.00)
0.098(2.49)
0.059(1.50)
0.433(11.00)
0.425(10.80)
A(3)
A(1)
Dimensions in inches and (millimeter)
C(2)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Symbol
Value
1200
1200
1200
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Conditions
Unit
V
TJ = 25°C
TJ = 25°C
TJ = 25°C
VRRM
VRSM
VDC
V
V
25.9
12.5
10
TC = 25°C (Per leg)
TC = 135°C (Per leg)
TC = 155°C (Per leg)
Continuous forward current
IF
A
Tc = 25°C, tp = 10ms
Repetitive peak forward surge current
IFRM
IFSM
50
A
A
Half sine wave, D = 0.3 (Per leg)
Tc = 25°C, tp = 10ms
Non-repetitive peak forward surge current
100
Half sine wave (Per leg)
141.5
62
TC = 25°C (Per leg)
TC = 110°C (Per leg)
Per leg
Power dissipation
PTOT
W
Typical thermal resistance from
junction to case
RθJC
RθJC
1.06
0.27
°C/W
Per diode
Maximum case temperature
TC
TJ
135
°C
°C
-55 ~ +175
Operating junction temperature range
Storage temperature range
TSTG
-55 ~ +175
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:
Page 1
QW-BSCXX
Comchip Technology CO., LTD.
Dual Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Symbol
Typ.
Parameter
Conditions
Min.
Max.
Unit
IF = 10A, Tj = 25°C
1.63
2.55
50
1.8
3
Forward voltage
VF
V
IF = 10A, Tj = 175°C
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
VR = 800V, Tj = 150°C
100
200
μA
Reverse current
IR
100
Total capacitive charge
QC = ∫VR C(V) dv
QC
nC
69
-
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj = 25°C, f = 1MHZ
VR = 800V, Tj = 25°C, f = 1MHZ
770
52
790
54
Total capacitance
pF
C
50
51
RATING AND CHARACTERISTIC CURVES (CDBGBSC201200-G)
Fig.1 - Forward IV Characteristics as a
Function of TJ :
Fig.2 - Reverse IV Characteristics as a
Function of TJ :
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
14
12
10
8
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
6
4
2
0
0
0.5
1
1.5
2
2.5
3
0
200 400 600 800 1000 1200 1400 1600
Reverse Voltage, VR (V)
Forward Voltage, VF (V)
Fig.3 - Current Derating
Fig.4 - Capacitance VS. Reverse Voltage
1000
900
800
700
600
500
400
100
90
80
70
60
50
40
30
20
10
0
10% Duty
30% Duty
50% Duty
300
200
70% Duty
DC
100
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
Case Tempature, TC (°C)
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
REV:
Page 2
Comchip Technology CO., LTD.
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