CDBD2SC21200-G [COMCHIP]
Rectifier Diode,;
| 型号： | CDBD2SC21200-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Rectifier Diode, 二极管 |
| 文件： | 总2页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Carbide Power Schottky Diode
CDBD2SC21200-G
Reverse Voltage: 1200V
Forward Current: 2A
RoHS Device
Features
TO-263/D2PAK
- Rated to 1200V at 2 Amps
- Short recovery time
- High speed switching possible
0.402(10.20)
0.394(10.00)
0.185(4.70)
0.177(4.50)
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
0.054(1.37)
0.046(1.17)
0.051(1.30)
0.043(1.10)
3
0.346(8.80)
0.339(8.60)
1
2
0.205(5.20)
0.197(5.00)
Circuit diagram
0.107(2.72)
0.091(2.32)
0.019(0.47)
0.014(0.37)
0.063(1.60)
0.055(1.40)
0.049(1.25)
0.045(1.15)
C(3)
0.037(0.95)
0.033(0.85)
Dimensions in inches and (millimeters)
C(1) A(2)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Symbol
Value
1200
1200
1200
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Conditions
Unit
V
VRRM
VRSM
VDC
V
V
6.2
3.2
2
TC = 25°C
TC = 135°C
TC = 155°C
Continuous forward current
IF
A
Tc = 25°C, tp = 10ms
Repetitive peak forward surge current
IFRM
IFSM
15
35
A
A
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
Non-repetitive peak forward surge current
53.2
23
TC = 25°C
Power dissipation
PTOT
W
TC = 110°C
Typical thermal resistance
Junction to case
RθJC
TJ
2.82
°C/W
°C
Operating junction temperature range
Storage temperature range
-55 ~ +175
-55 ~ +175
TSTG
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:
Page 1
QW-BSCXX
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Symbol
Typ.
Parameter
Conditions
Min.
Max.
Unit
IF = 2A, Tj = 25°C
1.62
2.8
20
1.7
3
Forward voltage
VF
V
IF = 2A, Tj = 175°C
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
VR = 800V, Tj = 150°C
100
200
μA
Reverse current
IR
30
Total capacitive charge
QC = ∫VR C(V) dv
QC
nC
12
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj = 25°C, f = 1MHZ
VR = 800V, Tj = 25°C, f = 1MHZ
136
12
150
13
Total capacitance
pF
C
11
12
RATING AND CHARACTERISTIC CURVES (CDBD2SC21200-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Forward Voltage, VF (V)
0
200
400
600
800 1000 1200 1400
Reverse Voltage, VR (V)
Fig.3 - Current Derating
Fig.4 - Capacitance VS. Reverse Voltage
22
20
18
16
14
12
10
8
160
140
120
100
80
10% Duty
30% Duty
60
6
40
4
50% Duty
20
70% Duty
DC
2
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
Case Tempature, TC (°C)
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
REV:
Page 2
Comchip Technology CO., LTD.
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