BSS138-G_15 [COMCHIP]
MOSFET;
| 型号： | BSS138-G_15 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | MOSFET |
| 文件： | 总5页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
BSS138-G
N-Channel 50-V(D-S) MOSFET
RoHS Device
Features
1 : Gate
2 : Source
3 : Drain
SOT-23
-High density cell design for extremely low RDS(ON).
-Rugged and Reliable.
0.118(3.00)
0.110(2.80)
3
0.055(1.40)
0.047(1.20)
Mechanical data
1
2
-Case: SOT-23, molded plastic.
0.079(2.00)
0.071(1.80)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.006(0.15)
0.003(0.08)
0.041(1.05)
0.035(0.90)
0.100(2.55)
0.089(2.25)
Circuit diagram
0.004(0.10) max
0.020(0.50)
0.020(0.50)
0.012(0.30)
D
0.012(0.30)
Dimensions in inches and (millimeter)
G
S
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Parameter
Value
Units
Drain-source voltage
VDS
VGS
ID
50
±20
V
V
Continuous gate-source voltage
Continuous drain current
Power dissipation
0.22
A
PD
0.35
W
Thermal resistance from Junction to ambient
Operating temperature
RΘJA
TJ
357
°C/W
°C
°C
150
Storage temperature
TSTG
-55 to +150
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-BTR40
Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics ( TA=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
50
Typ
Max
Unit
Off characteristics
Drain-Source breakdown voltage
Gate-body leakage
VGS=0V, ID=250μA
V(BR)DSS
IGSS
V
V
VDS=0V, VGS=±20V
VDS=50V, VGS=0V
VDS=30V, VGS=0V
±100
0.5
nA
μA
IDSS
Zero gate voltage drain current
IDSS
100
nA
On characteristics
Gate-threshold voltage (note 1)
VDS=VGS, ID=1mA
VGS=10V, ID=0.22A
VGS=4.5V, ID=0.22A
VDS=10V, ID=0.22A
VGS(th)
0.8
1.5
3.5
6
V
Ω
S
Static drain-source on-resistance
(note 1)
RDS(ON)
gFS
Forward transconductance (note 1)
Dynamic characteristics (note 2)
Input capacitance
0.12
Ciss
27
13
Coss
Output capacitance
pF
VDS=25V, VGS=0V, f=1MHz
Reverse transfer capacitance
Switching Characteristics
Turn-on delay time (note 1,2)
Crss
6
td(on)
5
Rise time (note 1,2)
tr
18
36
14
VDD=30V, VDS=10V,
ns
V
ID=0.29A, RGEN=6Ω
Turn-off delay time (note 1,2)
Fall time (note 1,2)
td(off)
tf
Drain-source body diode characteristics
Body diode forward voltage (note 1)
IS=0.44A, VGS=0V
VSD
1.4
Note:
1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2%
2. These parameters have no way to verify.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-BTR40
Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (BSS138-G)
Fig.1 - Output Characteristics
Fig.2 - Transfer Characteristics
2.0
1.5
1.0
0.5
0
0.6
0.5
0.4
0.3
0.2
0.1
0
TA=25°C
Pulsed
TA=25°C
Pulsed
VGS=10V
5V
4V
3V
2V
0
1
2
3
4
5
0
1
2
3
4
Drain to Source Voltage, VDS (V)
Gate to Source Voltage, VGS (V)
Fig.3 - RDS(ON) － ID
Fig.4 - RDS(ON) － VGS
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TA=25°C
Pulsed
TA=25°C
Pulsed
VGS= 4.5V
ID= 500mA
VGS= 6V
VGS= 10V
0.1 0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
Drain Current, ID (A)
Gate to Source Voltage, VGS (V)
Fig.5 - IS － VSD
1
0.1
TA=25°C
Pulsed
0.01
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source to Drain Voltage, VSD (V)
REV:A
Page 3
QW-BTR40
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
P0
P1
T
W
C
A
P
1
2
0
o
D2
D1
D
W1
SYMBOL
A
B
C
d
D
D1
D2
SOT-23
SOT-23
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
Φ1.50 ± 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004 Φ0.059 ± 0.004 7.008 ± 0.079
0.512 ± 0.039
2.142 ± 0.039
SYMBOL
(mm)
E
F
P
P0
P1
W
W1
8.00 + 0.30 /–0.10
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
0.157 ± 0.004
2.00 ± 0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004
0.484 ± 0.039
REV:A
Page 4
QW-BTR40
Comchip Technology CO., LTD.
MOSFET
Marking Code
Marking Code
SS
3
Part Number
BSS138-G
XX
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-23
SIZE
(mm)
(inch)
A
A
B
C
0.80
0.031
C
D
1.90
2.02
0.075
0.080
D
2.82
0.111
B
Standard Packaging
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
3,000
SOT-23
7
REV:A
Page 5
QW-BTR40
Comchip Technology CO., LTD.
相关型号：
BSS138-T
TRANSISTOR 200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
BSS138-TAPE-13
TRANSISTOR 200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
BSS138-TAPE-7
TRANSISTOR 200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
BSS138/D87Z
TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal
TI
BSS138/S62Z
TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal
TI
©2020 ICPDF网 联系我们和版权申明