BC858B-HF [COMCHIP]

General Purpose Transistor;
BC858B-HF
型号: BC858B-HF
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

General Purpose Transistor

文件: 总6页 (文件大小:163K)
中文:  中文翻译
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General Purpose Transistor  
BC856-HF Thru. BC858-HF Series (PNP)  
RoHS Device  
Halogen Free  
Features  
- Ideally suited for automatic insertion  
SOT-23  
- Power dissipation  
PCM: 0.25W (@TA=25°C)  
0.122(3.10)  
0.106(2.70)  
- Low current.(max. 100mA)  
3
- Collector-base voltage  
VCBO: BC856 = -80V  
BC857 = -50V  
0.059(1.50)  
0.043(1.10)  
1
2
BC858 = -30V  
0.079(2.00)  
0.071(1.80)  
- Operating and storage junction temperature  
range: TJ, TSTG= -65 to +150°C  
0.004(0.10)  
Typ.  
0.039(1.00)  
Typ.  
0.102(2.60)  
0.087(2.20)  
Mechanical data  
- Case: SOT-23, molded plastic.  
0.004(0.10)  
0.001(0.02)  
- Terminals: Solderable per MIL-STD-750,  
0.016(0.40)  
Typ.  
method 2026.  
Circuit diagram  
Dimensions in inches and (millimeter)  
3
- 1.BASE  
- 2.EMITTER  
- 3.COLLECTOR  
1
2
Maximum Ratings (at Ta=25°C unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
-80  
-50  
-30  
BC856  
BC857  
BC858  
Collector-Base voltage  
VCBO  
VCEO  
V
-65  
-45  
-30  
BC856  
BC857  
BC858  
Collector-Emitter voltage  
Emitter-Base voltage  
V
VEBO  
IC  
-5  
V
A
Collector current-continuous  
Collector dissipation  
-0.1  
PC  
250  
mW  
°C  
Junction temperature range  
Storage temperature range  
TJ  
-65 to +150  
-65 to +150  
°C  
TSTG  
REV:A  
Company reserves the right to improve product design , functions and reliability without notice.  
Page 1  
QW-JTR16  
Comchip Technology CO., LTD.  
General Purpose Transistor  
Electrical Characteristics (TA= 25°C unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
MIN  
TYP  
MAX  
Unit  
-80  
-50  
-30  
BC856  
BC857  
BC858  
Collector-Base breakdown voltage  
IC = -10μA , IE=0  
V(BR)CBO  
V
-65  
-45  
-30  
BC856  
BC857  
BC858  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
IC = -10mA , IB=0  
V(BR)CEO  
V(BR)EBO  
V
V
IE = -1μA , IC=0  
-5  
VCB= -30V , IE=0  
VEB= -5V , IC=0  
Collector cut-off current  
Emitter cut-off current  
ICBO  
IEBO  
-1  
-15  
nA  
µA  
-0.1  
BC856A ,857A ,858A  
BC856B ,857B ,858B  
BC857C ,858C  
125  
220  
420  
250  
475  
800  
DC current gain  
VCE = -5V , IC= -2.2mA  
hFE  
IC =-100mA , IB=-5mA  
IC =-10mA , IB=-0.5mA  
-0.65  
-0.3  
Collector-Emitter saturation voltage  
Base-Emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
IC =-10mA , IB=-0.5mA  
IC =-100mA , IB=-5mA  
-0.7  
-0.85  
IC =-2mA , VCE=-5V  
IC =-10mA , VCE=-5V  
-0.6  
-0.65  
-0.75  
-0.82  
Base-Emitter voltage  
Collector capacitance  
Transition frequency  
VBE(on)  
CC  
V
VCB =-10V , IE=Ie=0  
f=1MHZ  
pF  
4.5  
2
IC=-200uA,VCE=-5V  
RS=2kΩ,f=1kHz,  
B=200Hz  
F
10  
dB  
VCE=-5V, IC=-10mA  
f=100MHZ  
Transition frequency  
fT  
100  
MHZ  
REV:A  
Company reserves the right to improve product design , functions and reliability without notice.  
Page 2  
QW-JTR16  
Comchip Technology CO., LTD.  
General Purpose Transistor  
Electrical Characteristic Curves (BC856-HF Thru. BC858-HF Series)  
Fig.1 - DC current gain as A function fo  
collector current; typical values.  
Fig.2 - Base-Emitter voltage as a function  
of collector current; typical values  
-1200  
-1000  
500  
400  
300  
200  
100  
0
BC857A;VCE= -5V  
-800  
-600  
-400  
-200  
0
BC857A;VCE= -5V  
-2  
-1  
-2  
-1  
3
3
-10  
-10  
-1  
IC, (mA)  
-10  
-102  
-10  
-10  
-1  
IC, (mA)  
-10  
-102  
-10  
-10  
Fig.3 - Collector-Emitter saturation voltage  
as a function of collector current;  
typical values.  
Fig.4 - Base-Emitter saturation voltage  
as a function of collector current;  
typical values  
4
-10  
-1200  
-1000  
BC857A;IC/IB= 20  
3
-10  
-800  
-600  
-400  
Tamb=150°C  
2
-10  
-200  
0
Tamb=25°C  
Tamb=-55°C  
BC857A;IC/IB= 20  
-10  
-102  
-10  
-10  
-1  
-10  
-102  
-10  
-1  
3
-1  
3
-10  
-1  
-10  
IC, (mA)  
IC, (mA)  
Fig.5 - DC current gain as a function fo  
collector current; typical values.  
Fig. 6 - Base-Emitter voltage as a function  
of collector current; typical values.  
-1200  
1000  
800  
600  
400  
200  
0
BC857B;VCE= -5V  
-1000  
-800  
-600  
-400  
-200  
0
BC857B;VCE=-5V  
-2  
-1  
-10  
2
-10  
3
-10  
-2  
-1  
-10  
2
-10  
3
-10  
-1  
-10  
-10  
-1  
-10  
-10  
IC, (mA)  
IC, (mA)  
REV:A  
Company reserves the right to improve product design , functions and reliability without notice.  
Page 3  
QW-JTR16  
Comchip Technology CO., LTD.  
General Purpose Transistor  
Electrical Characteristic Curves (BC856-HF Thru. BC858-HF Series)  
Fig.7 - Collector-Emitter saturation voltage  
as a function of collector current  
typical values.  
Fig.8 - Base-Emitter saturation voltage  
as a function of collector current;  
typical values  
4
-10  
-1200  
-1000  
BC857B;IC/IB= 20  
3
-10  
-800  
-600  
-400  
Tamb=150°C  
2
-10  
-200  
0
Tamb=25°C  
Tamb=-55°C  
BC857B;IC/IB= 20  
2
-10  
-10  
2
-10  
3
-10  
-1  
-1  
3
-10  
-1  
-10  
-1  
-10  
-10  
-10  
IC, (mA)  
IC, (mA)  
Fig.9 - DC current gain as a function fo  
collector current; typical values.  
Fig.10 - Base-Emitter voltage as a function  
of collector current; typical values  
-1200  
1000  
800  
600  
400  
200  
0
BC857C;VCE= -5V  
-1000  
-800  
-600  
-400  
-200  
0
BC857C;VCE= -5V  
2
-2  
-1  
-10  
2
3
-1  
3
-10  
-1  
-10  
-1  
-10  
-10  
-10  
-10  
-10  
-10  
IC, (mA)  
IC, (mA)  
Fig.12 - Base-Emitter saturation voltage  
Fig.11 - Collector-Emitter saturation voltage  
as a function of collector current;  
typical values  
as a function of collector current;  
typical values.  
4
-10  
-1200  
-1000  
BC857C;IC/IB= 20  
3
-10  
-800  
-600  
-400  
Tamb=150°C  
2
-10  
-200  
0
BC857C;IC/IB= 20  
2
Tamb=-55°C  
Tamb=25°C  
-10  
-10  
-1  
2
-10  
3
-10  
-1  
3
-10  
-1  
-10  
-1  
-10  
-10  
-10  
IC, (mA)  
IC, (mA)  
REV:A  
Company reserves the right to improve product design , functions and reliability without notice.  
Page 4  
QW-JTR16  
Comchip Technology CO., LTD.  
General Purpose Transistor  
Reel Taping Specification  
P0  
P1  
W
XX  
1
2
0
o
D2  
D
D1  
W1  
SYMBOL  
A
B
C
d
D
D1  
D2  
(mm)  
SOT-23  
SOT-23  
3.15 ± 0.10  
2.77 ± 0.10  
1.22 ± 0.10  
1.50 ± 0.10  
178.00 ± 1.00  
54.40 ± 0.50  
13.00 ± 0.50  
(inch)  
0.124 ± 0.004  
0.109 ± 0.004  
0.048 ± 0.004  
0.059 ± 0.004  
7.008 ± 0.039  
0.512 ± 0.020  
2.142 ± 0.020  
SYMBOL  
(mm)  
E
F
P
P0  
P1  
W
W1  
8.00 + 0.30 / - 0.10  
1.75 ± 0.10  
3.50 ± 0.05  
4.00 ± 0.10  
4.00 ± 0.10  
2.00 ± 0.05  
12.50 ± 1.00  
(inch)  
0.069 ± 0.004  
0.138 ± 0.002  
0.157 ± 0.004  
0.157 ± 0.004  
0.079 ± 0.002 0.315 + 0.012 / - 0.004  
0.492 ± 0.039  
REV:A  
Company reserves the right to improve product design , functions and reliability without notice.  
Page 5  
QW-JTR16  
Comchip Technology CO., LTD.  
General Purpose Transistor  
Marking Code  
Marking Code  
Part Number  
BC856A-HF  
BC857A-HF  
BC858A-HF  
BC856B-HF  
BC857B-HF  
BC858B-HF  
BC857C-HF  
BC858C-HF  
3A  
3E  
3J  
3
XX  
1
2
3B  
3F  
3K  
3G  
3L  
xx = Product type marking code  
Suggested PAD Layout  
SOT-23  
SIZE  
B
(mm)  
(inch)  
A
A
B
C
D
0.90  
0.035  
0.80  
1.90  
2.00  
0.031  
0.075  
0.079  
D
C
Standard Packaging  
Qty Per Reel  
Case Type  
Reel Size  
(inch)  
(Pcs)  
SOT-23  
3,000  
7
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 6  
QW-JTR16  
Comchip Technology CO., LTD.  

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