2SA1213-G [COMCHIP]

General Purpose Transistor;
2SA1213-G
型号: 2SA1213-G
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

General Purpose Transistor

文件: 总4页 (文件大小:155K)
中文:  中文翻译
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General Purpose Transistor  
2SA1213-G Series (PNP)  
RoHS Device  
Features  
-Small flat package.  
1 : Base  
2 : Collector  
3 : Emitter  
SOT-89-3L  
-Power amplifier and switching  
-applications.  
0.181(4.60)  
0.173(4.40)  
-Low saturation voltage.  
0.061(1.55)  
REF.  
-High speed switching time.  
0.102(2.60)  
0.091(2.30)  
0.167(4.25)  
0.155(3.94)  
1
2
3
Maximum Ratings (at TA=25°C unless otherwise noted)  
0.020(0.52)  
0.023(0.58)  
0.016(0.40)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
0.013(0.32)  
Parameter  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Value  
-50  
-50  
-5  
Unit  
V
0.060(1.50)  
TYP.  
0.118(3.00)  
TYP.  
V
V
0.063(1.60)  
0.055(1.40)  
Continuous current  
-2  
A
Collector power dissipation  
PC  
500  
mW  
Thermal resistance from  
junction to ambient  
RθJA  
250  
°C/W  
0.017(0.44)  
0.014(0.35)  
0.047(1.20)  
0.035(0.90)  
Junction temperature  
Storage temperature  
TJ  
150  
°C  
°C  
Dimensions in inches and (millimeter)  
Tstg  
-55~+150  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Conditions  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
IC =-0.1mA , IE=0  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
IC =-10mA , IB=0  
IE =-0.1mA , IC=0  
V
V
nA  
nA  
VCB=-50V , IE=0  
-100  
-100  
240  
VEB=-5V , IC=0  
Emitter cut-off current  
IEBO  
VCE=-2V , IC=-500mA  
VCE=-2V , IC=-2A  
IC=-1A , IB=-50mA  
IC=-1A , IB=-50mA  
VCB=-10V , IE=0 , f=1MHZ  
VCE=-2V , IC=-0.5A  
70  
20  
DC current gain  
hFE  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector output capacitance  
Transition frequency  
VCE(sat)  
VBE(sat)  
Cob  
-0.5  
-1.2  
V
V
40  
PF  
fT  
100  
MHZ  
Classification Of hFE  
2SA1213O-G  
70-140  
Part No.  
2SA1213Y-G  
120-240  
NY  
Range  
Marking  
NO  
REV: A  
Page 1  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BTR42  
General Purpose Transistor  
RATING AND CHARACTERISTIC CURVES (2SA1213-G)  
Fig.1 - Static Characteristic  
Fig.2 - hFE— IC  
1000  
-1000  
-800  
-600  
-400  
-200  
-0  
COMMON EMITTER  
VCE=-2V  
COMMON  
-6mA  
EMITTER  
Ta=25°C  
-5.4mA  
-4.8mA  
-4.2mA  
Ta=100°C  
Ta=25°C  
-3.6mA  
-3mA  
100  
-2.4mA  
-1.8mA  
-1.2mA  
IB=-600uA  
10  
-1  
-10  
-100  
-1000-2000  
-0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
Collector-Emitter Voltage, (V)  
Collector Current , (mA)  
Fig.3 - VCEsat — IC  
Fig.4 - VBEsat — IC  
-1000  
-1000  
Ta=25°C  
-300  
-100  
Ta=100°C  
Ta=100°C  
Ta=25°C  
-30  
-10  
β=20  
β=20  
-200  
-1  
-10  
-100  
-1000  
-1  
-10  
-100  
-1000  
Collector Current, Ic (mA)  
Fig.5 - IC — VBE  
Collector Current, Ic (mA)  
Fig.6 - Cob/Cib — VCB/VEB  
-1000  
-100  
-10  
1000  
100  
10  
f=1MHz  
IE=0/IC=0  
Ta=25°C  
Ta=100°C  
Ta=25°C  
VCE=-2V  
-1  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-0.1  
-1  
-10  
-20  
Base-Emmiter Voltage, VBE(V)  
Reverse Voltage, (V)  
REV: A  
Page 2  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BTR42  
General Purpose Transistor  
RATING AND CHARACTERISTIC CURVES (2SA1213-G)  
Fig.7 - PC Ta  
600  
500  
400  
300  
200  
100  
0
0
25  
50  
75  
100  
125  
150  
Ambient Temperature , Ta (°C)  
Suggested PAD Layout  
A
B
SOT-89-3L  
SIZE  
(mm)  
2.60  
1.40  
4.40  
3.20  
1.90  
1.40  
0.80  
0.90  
1.50  
(inch)  
0.102  
0.055  
0.173  
0.126  
0.075  
0.055  
0.032  
0.035  
0.059  
A
B
C
D
E
F
G
H
I
C
D
45°  
E
F
G
H
I
Standard Packaging  
REEL PACK  
Case Type  
SOT-89-3L  
REEL  
Reel Size  
( pcs )  
(inch)  
1,000  
7
REV: A  
Page 3  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BTR42  
General Purpose Transistor  
Reel Taping Specification  
1
2
0
o
D2  
D
D1  
W1  
SYMBOL  
A
B
C
d
D
D1  
D2  
(mm)  
4.85 ± 0.10  
4.45 ± 0.10  
1.85 ± 0.10  
1.50 + 0.10  
180 ± 2.00  
60.00 ± 1.00  
R32.00 ± 1.00  
1.260 ± 0.039  
SOT-89-3L  
SOT-89-3L  
(inch)  
0.191 ± 0.004  
0.175± 0.004  
0.073 ± 0.004  
0.059 + 0.004  
7.087 ± 0.079  
2.362 ± 0.039  
SYMBOL  
(mm)  
E
F
P
P0  
P1  
W
W1  
+
12.00 0.30 /0.10  
1.75 ± 0.10  
5.50 ± 0.10  
8.00 ± 0.10  
4.00 ± 0.10  
0.158 ± 0.004  
2.00 ± 0.10  
16.50 ± 1.00  
+
(inch)  
0.069 ± 0.004  
0.217 ± 0.004  
0.315 ± 0.004  
0.079 ± 0.004 0.472 0.012 /0.004  
0.650 ± 0.039  
REV: A  
Page 4  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BTR42  

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