1N5402T-G [COMCHIP]
Rectifier Diode,;
| 型号： | 1N5402T-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Rectifier Diode, 二极管 |
| 文件： | 总4页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General Purpose Silicon Rectifiers
1N5400-G Thru. 1N5408-G
Voltage: 50 to 1000 V
Current: 3.0 A
RoHS Device
DO-27 (DO-201AD)
Features
-Low forward voltage drop.
-High reliability.
0.052(1.32)
DIA.
-High current capability.
-High surge current capability.
0.048(1.22)
1.000(25.40) Min.
0.375(9.53)
0.335(8.51)
Mechanical data
-Case: Molded plastic
0.220(5.60)
0.197(5.00)
DIA.
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Color band denotes cathode end
-Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
1.000(25.40) Min.
-Mounting position: Any
Dimensions in inches and (millimeter)
-Weight: 1.2 grams
Maximum Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408
Symbol
Parameter
Unit
-G
50
35
50
-G
100
70
-G
200
140
200
-G
400
280
400
-G
600
420
600
-G
800
560
800
-G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
1000
700
V
V
V
VRMS
Maximum DC blocking voltage
VDC
100
1000
Maximum average forward rectified current
I
F(AV)
3.0
A
A
.375”(9.5mm) Lead length
@TA=75°C
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
1.0
Maximum instantaneous forward voltage @3.0A
V
F
V
@TJ=25°C
5.0
Maximum DC reverse current
μA
I
R
at rated DC blocking voltage
Typical thermal resistance (Note 1)
Operating temperature range
Storage temperature range
@TJ=100°C
100
R
θJA
18
°C/W
°C
T
J
-65 to +125
-65 to +150
TSTG
°C
NOTES:
1. Thermal resistance from junction to ambient 0.375” (9.5mm) lead length.
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General Purpose Silicon Rectifiers
Rating and Characteristic Curves (1N5400-G Thru. 1N5408-G)
Fig.1 - Maximum Forward Current
Derating Curve
Fig.2 - Typical Instantaneous Forward
Characteristics Per Bridge Element
3.0
2.0
1.0
0
100
10
1
0.1
Single phase half wave 60Hz
Resistive or inductive load
0.375” (9.5mm) lead length
TJ =25°C
Pulse width=300us
1% Duty cycle
0.01
0
25
50
75
100
125
150
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage, (V)
Ambient Temperature, (°C)
Fig.3 - Maximum Non-repetitive Forward
Surge Curren Per Bridge Element
Fig.4 - Typical Reverse Characteristics
Per Bridge Element
200
10.0
TJ=100°C
100
50
1.0
0.1
TJ=25°C
8.3ms single half sine-wave
(JEDEC Method)
0.01
10
1
10
100
0
20 40 60 80 100 120 140
Number of Cycles at 60Hz
Percent of Rated Peak Reverse Voltage, (V)
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General Purpose Silicon Rectifiers
Taping Specification For Axial Lead Diodes
90° ± 5°
Z
A
E
L1
B
L2
T
E
Do
W0
D1
L
H
D
W
SYMBOL
(mm)
A
B
Z
T
E
L1
L2
DO-27
1.20 (max)
1.00 (max)
1.00 (max)
1.00 (max)
10.00 ± 0.50
52.00 ± 0.50
6.00 ± 0.40
(DO-201AD)
0.047 (max)
0.039 (max)
0.039 (max)
0.039 (max)
(inch)
0.394 ± 0.020 2.047 ± 0.020
0.236 ± 0.016
SYMBOL
(mm)
D1
D0
D
W0
L
W
H
DO-27
85.70 ± 0.30
16.60 ± 0.40
330.00
72.00 ± 3.00
260.00
75.00
145.00
(DO-201AD)
(inch)
3.374 ± 0.012
0.654 ± 0.016
13.000
2.835 ± 0.118
10.236
2.953
5.709
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General Purpose Silicon Rectifiers
Marking Code
Marking code
Packaging
Part Number
1N5400-G
1N5401-G
1N5402-G
1N5404-G
1N5406-G
1N5407-G
1N5408-G
1N5400T-G
1N5401T-G
1N5402T-G
1N5404T-G
1N5406T-G
1N5407T-G
1N5408T-G
1N5400
1N5401
1N5402
1N5404
1N5406
1N5407
1N5408
1N5400
1N5401
1N5402
1N5404
1N5406
1N5407
1N5408
AMMO
AMMO
AMMO
AMMO
AMMO
AMMO
AMMO
REEL
REEL
REEL
REEL
REEL
REEL
REEL
1N54XX
XX = Product type marking code
Note:
1) Suffix code after part number to specify packaging item .
Packaging
AMMO PACK
REEL PACK
Code
NA
T
Standard Packaging
AMMO PACK
Case Type
BOX
CARTON
( pcs )
( pcs )
DO-27
1,200
12,000
(DO-201AD)
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
DO-27
1,200
13
(DO-201AD)
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