1N5400-G [COMCHIP]
General Purpose Rectifier; 通用整流器型号: | 1N5400-G |
厂家: | COMCHIP TECHNOLOGY |
描述: | General Purpose Rectifier |
文件: | 总2页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
General Purpose Rectifier
1N5400-G thru 1N5408-G (RoHS Device)
Voltage: 50 ~ 1000 Volts
Current: 3.0 Amp
Features:
Low forward voltage drop
DO-201AD
High current capability
.052 (1.3)
.048 (1.2)
Low reverse leakage current
1.0 (25.4)
DIA.
High surge current capability
MIN.
Mechanical Data:
Case: Molded plastic DO-201AD
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
.375 (9.5)
.285 (7.2)
.210 (5.3)
.190 (4.8)
1.0 (25.4)
MIN.
Weight: 1.1gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ºC unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate currently by 20%.
1N
1N
1N
1N
1N
1N
1N
Characteristics
Symbol
UNIT
5400-G 5401-G 5402-G 5404-G 5406-G 5407-G 5406-G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
A
50
35
50
100
70
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
V
V
RRM
RMS
Maximum DC Blocking Voltage
100
1000
V
DC
Max. Average Forward Rectified Current@ T = 75ºC
I
L
(AV)
Peak Forward Surge Current 8.3ms Single
half-sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
150
A
V
Max. Instantaneous Forward Voltage @ 3.0A
V
0.95
F
uA
uA
Max. DC Reverse Current @ TJ = 25ºC
At Rated DC Blocking Voltage @ TJ = 100ºC
5.0
I
R
250
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Junction and Storage
Temperature Range
pF
40
15
C
J
ºC/W
RθJC
TJ TSTG
,
-55 to +125
ºC
Note:
(1) Thermal resistance junction to lead.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
“-G” suffix designated RoHS compliant version
.
.
.
Page1
Comchip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com
General Purpose Rectifier
1N5400-G thru 1N5408-G (RoHS Device)
FIG.2 - MAXIMUM NON-REPETITIVE
FIG.1 - FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT
3.0
2.5
2.0
1.5
1.0
0.5
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
50
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
LEAD TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
1.0
100
TJ=100oC
10
1
0.1
TJ=25oC
0.1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
100
10
1
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
“-G” suffix designated RoHS compliant version
.
.
.
Page2
Comchip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com
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