1N5397-G [COMCHIP]
Axial Silastic Guard Junction Standard Rectifier; AXIAL SILASTIC GUARD JUNCTION标准整流器
| 型号： | 1N5397-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Axial Silastic Guard Junction Standard Rectifier |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Axial Silastic Guard Junction Standard Rectifier
1N5391-G Thru. 1N5399-G
Voltage: 50 to 1000 Volts
Forward Current: 1.5 Amps
RoHS Device
Features
DO-15
-Low cost construction.
0.034(0.9)
0.028(0.7)
DIA.
-Low forward voltage drop.
1.0(25.4)
MIN.
-Low reverse leakage.
-High forward surge current capability.
-High temperature soldering guarantee: 260°C/10
seconds, 0.375" (9.5mm) lead length at 5lbs
(2.3kg) tension.
0.300(7.6)
0.230(5.8)
Mechanical Data
-Case: transfer-molded plastic.
0.140(3.6)
0.104(2.6)
DIA.
-Epoxy: UL94V-0 rate flame retardant.
1.0(25.4)
MIN.
-Lead: Plated axial lead, solderable per MIL-STD-
202E, method 208C.
-Polarity: Cathode indicated by polarity band.
-Mounting position: Any.
Dimensions in inches and (millimeters)
-Weight: 0.012 ounce, 0.33grams.
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399
Unit
Symbol
Parameter
-G
-G
-G
-G
-G
-G
-G
-G
-G
Max.repetitive peak reverse voltage
Max.RMS voltage
VRRM
VRMS
VDC
50
100
200
300
400
500
600
800
1000
V
V
V
35
50
70
140
200
210
300
280
400
350
500
420
600
560
800
700
Max.DC blocking voltage
100
1000
Max. average forward rectified
current , 0.375"(9.5mm) lead length at
TA=75 OC
I(AV)
IFSM
1.5
A
A
Peak forward surge current, 8.3mS
single half sine wave superimpose on
rated load (JEDEC method)
30
Max. instantaneous forward voltage
at IF=1.0A
VF
IR
1.1
V
Max. DC reverse current at TA=25 OC
rated DC blocking voltage TA=100 OC
5.0
50
μA
Max. full load reverse current, full
cycle average 0.375"(9.5mm) lead
length at TL=75 OC
IR(AV)
30
μA
CJ
RθJA
TJ
13
pF
OC/W
OC
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
50
-55 to +150
-55 to +150
OC
TSTG
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted with 0.2"×0.2" (5.0×
5.0mm) copper pads.
REV:A
Page 1
QW-BB021
Comchip Technology CO., LTD.
Axial Silastic Guard Junction Standard Rectifier
Rating and Characteristic Curves (1N5391-G Thru. 1N5399-G)
Fig.1 Typical Forward Current
Derating Curve
Fig.2 Max. Non-Repetitive Peak
Forward Surge Current
1.8
1.5
1.2
0.9
0.6
0.3
0
60
50
40
Single phase, half
wave, 60Hz,
8.3mS, single half
sine-wave, JEDEC
method.
Resistive or
inductive load
TJ=TJmax
30
20
10
0
100
150
175
1
10
0
25
50
75
100
125
TA, Ambient Temperature (°C)
Number of Cycles at 60Hz
Fig.3 Typical Instantaneous Forward
Characteristics
Fig.4 Typical Reverse Characteristics
10
1
10
1
TJ=100 OC
TJ=25 O
C
0.1
0.01
0.1
Pulse width=300μs.
1% duty cycle
TJ=25 O
C
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
140
VF, Instantaneous Forward Voltage (V)
Percent of Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance
1000
f=1MHz
TJ=25 O
C
100
10
0.1
1
10
100
VR, Reverse Voltage (V)
REV:A
Page 2
QW-BB021
Comchip Technology CO., LTD.
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