UBD2.0 [CLARE]
HIGH-SPEED TRANSIENT SURGE PROTECTORS; 高速瞬变浪涌保护器
| 型号： | UBD2.0 |
| 厂家： | 
CLARE |
| 描述： | HIGH-SPEED TRANSIENT SURGE PROTECTORS |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH-SPEED TRANSIENT SURGE PROTECTORS
UNI-IMPS
DESCRIPTION
CP Clare’s UNI-IMP high-speed transient surge protectors (0.55-20kV) provide the ultimate protection from high-
energy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary
semiconductor junction process that results in nanosecond response times combined with peak current ratings in
excess of 20kA. A unique benefit of this technology is that the breakdown voltage is virtually independent of the
rise time of the transient. In addition, the low capacitance of these devices allows for direct placement on high-
frequency lines and antenna feeds without excessive loading.
APPLICATIONS
FEATURES
■
■
■
■
■
■
Antenna feedlines
Test equipment
Video displays
Medical electronics
Instrumentation circuits
Fast impulse breakdown (≤120% of typical DC
breakdown to 200kV/µs)
Tight DC breakdown voltage tolerance (±10%)
Non-radioactive
■
■
■
Low capacitance
STANDARD VOLTAGES
Series
DC Breakdown
Voltage (typ)
Unit
UBD
550
600
V
V
650
750
850
V
V
V
1.0
1.2
1.5
2.0
2.5
3.0
4.0
4.0
5.0
6.0
7.5
10.0
12.0
15.0
20.0
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
UBT
and
UGT
(See detailed specifications for more information.)
www.cpclare.com
561
HIGH-SPEED TRANSIENT SURGE PROTECTORS
UNI-IMPS
SPECIFICATIONS
All characteristics at 25˚C
UBD-550
UBD-600
UBD-650
PARAMETER
CONDITIONS
SYMBOL MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Device Specifications
DC Breakdown
Impulse Breakdown
Insulation Resistance
Capacitance
100V/s
5kV/µs
100V
VBD
Vbd
IR
C
495 550
605
660
-
540
600
660
720
-
585
650
715
780
-
V
V
Ω
pF
-
1010
-
-
-
-
-
1010
-
-
-
-
-
1010
-
-
-
-
1MHz
20.0
20.0
20.0
Life Ratings
Surge Life
3kA (PW=15µs)
-
330
-
-
420
-
-
500
-
-
surges
UBD-750
UBD-850
UBD-1.0
PARAMETER
CONDITIONS
SYMBOL MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Device Specifications
DC Breakdown
Impulse Breakdown
Insulation Resistance
Capacitance
100V/s
5kV/µs
100V
VBD
Vbd
IR
C
675 750
825
900
-
765
850
935
1020
-
900 1000 1100
V
V
Ω
pF
-
1010
-
-
-
-
-
1010
-
-
-
-
-
1010
-
-
-
-
1200
-
15.0
1MHz
20.0
20.0
Life Ratings
Surge Life
3kA (PW=15µs)
660
-
-
830
-
-
1080
-
-
surges
UBD-1.2
UBD-1.5
UBD-2.0
PARAMETER
CONDITIONS
SYMBOL MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Device Specifications
DC Breakdown
Impulse Breakdown
Insulation Resistance
Capacitance
100V/s
5kV/µs
100V
VBD
Vbd
IR
C
1.08 1.20 1.32 1.35 1.50 1.65 1.80 2.00 2.20
kV
kV
Ω
-
1010
-
-
-
-
1.44
-
15.0
-
1010
-
-
-
-
1.80
-
15.0
-
1010
-
-
-
-
2.40
-
10.0
1MHz
pF
Life Ratings
Surge Life
3kA (PW=15µs)
-
1410
-
-
1900
-
-
2400
-
-
surges
UBD-2.5
UBD-3.0
UBD-4.0
PARAMETER
CONDITIONS
SYMBOL MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Device Specifications
DC Breakdown
Impulse Breakdown
Insulation Resistance
Capacitance
100V/s
5kV/µs
100V
VBD
Vbd
IR
C
2.25 2.50 2.75 2.70 3.00 3.30 3.60 4.00 4.40
kV
kV
Ω
-
1010
-
-
-
-
3.00
-
10.0
-
1010
-
-
-
-
3.60
-
5.0
-
1010
-
-
-
-
4.80
-
5.0
1MHz
pF
Life Ratings
Surge Life
3kA (PW=15µs)
-
2400
-
-
2400
-
-
2400
-
-
surges
UBT-4.0
UGT-4.0
UBT-5.0
UGT5.0
UBT-6.0
UGT-6.0
PARAMETER
CONDITIONS
SYMBOL MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Device Specifications
DC Breakdown
Impulse Breakdown
Insulation Resistance
Capacitance
100V/s
5kV/µs
100V
VBD
Vbd
IR
C
3.60 4.00 4.40 4.50 5.00 5.50 5.40 6.00 6.60
kV
kV
Ω
-
1010
-
-
-
-
4.80
-
5.0
-
1010
-
-
-
-
6.00
-
3.0
-
1010
-
-
-
-
7.20
-
3.0
1MHz
pF
Life Ratings
Surge Life
10kA (PW=5µs)
-
1300
-
-
1300
-
-
1300
-
-
surges
North America: 1-800-CPCLARE
Europe: 32-11-300868
Asia: 886-2-2523-6368
Japan: 81-3-3980-2212
562
HIGH-SPEED TRANSIENT SURGE PROTECTORS
UNI-IMPS
SPECIFICATIONS
UBT-7.5
UGT-7.5
UBT-10.0
UGT-10.0
UBT-12.0
UGT-12.0
All characteristics at 25˚C
PARAMETER
CONDITIONS
SYMBOL MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Device Specifications
DC Breakdown
Impulse Breakdown
Insulation Resistance
Capacitance
100V/s
5KV/µs
100V
VBD
Vbd
IR
C
6.75 7.50 8.25 9.0
10.0 11.0 10.8 12.0 13.2
kV
kV
Ω
-
1010
-
-
-
-
4.8
-
5.0
-
1010
-
-
-
-
6
-
3.0
-
1010
-
-
-
-
7.2
-
3.0
1MHz
pF
Life Ratings
Surge Life
10kA (PW=5µs)
-
1300
-
-
1300
-
-
1300
-
-
surges
UBT-15.0
UGT-15.0
UBT-20.0
UGT-20.0
PARAMETER
CONDITIONS
SYMBOL MIN TYP MAX MIN TYP MAX UNITS
Device Specifications
DC Breakdown
Impulse Breakdown
Insulation Resistance
Capacitance
100V/s
5KV/µs
100V
VBD
Vbd
IR
C
13.5 15.0 16.5 18.0 20.0 22.0
kV
kV
Ω
-
1010
-
-
-
-
18.0
-
2.0
-
1010
-
-
-
-
24.0
-
2.0
1MHz
pF
Life Ratings
Surge Life
10kA (PW=5µs)
-
1300
-
-
1300
-
-
surges
DIMENSIONS
mm
MECHANICAL DIMENSIONS
(inches)
UGT SERIES
UBT SERIES
7.94 ± 1.59
(0.312 ± 0.063)
7.94 ± 1.59
(0.312 ± 0.063)
7.94 ± 1.59
(0.312 ± 0.063)
7.94 ± 1.59
(0.312 ± 0.063)
14.22 ± 0.79 DIA.
(0.560 ± 0.031)
14.96 ± 0.79 DIA.
(0.589 ± 0.031)
54.28 ± 1.59
(2.137 ± 0.063)
30.16 ± 1.59
(1.187 ± 0.063)
ORDERING INFORMATION
UNI-IMPS with other breakdown voltages in the 0.55 to 20kV range
are available on request. All UNI-IMPs are available with .360 O.D.
endcaps. UGTs are also available with .250 O.D. endcaps. UBDs are
available with a threaded male termination (#8-20) on one end.
UBD SERIES
14.29 ± 1.59
(0.562 ± 0.063)
6.32 ± 1.59
(0.249 ± 0.063)
A complete part number is represented by the digits below.
Breakdown voltages are expressed in Volts for devices <1000V and
kV for devices ≥1kV. For example, UBD-550 is a 550V UBD series
device, and UBT-10.0 is a 10kV UBT series device.
14.96 ± 0.79 DIA.
(0.589 ± 0.031)
UBT- X.X for 4.0-9.0kV
UBT-XX.X for 10.0-20.0kV
UGT- X.X for 4.0-9.0kV
UGT-XX.X for 10.0-20.0kV
20.64 ± 1.59
(0.812 ± 0.063)
Series
UBD
UBT
Breakdown Voltage
See specifications
tables
UGT
www.cpclare.com
563
相关型号：
UBFQ31A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
ZETEX
©2020 ICPDF网 联系我们和版权申明