MHU04N65 [CITC]
Silicon N-Channel Power MOSFET;
| 型号： | MHU04N65 |
| 厂家： | 
Chip Integration Technology Corporation |
| 描述： | Silicon N-Channel Power MOSFET |
| 文件： | 总10页 (文件大小：789K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
Main Product Characteristics
■ Outline
TO-251
ID
4A
VDSS
PD(TC=25oC)
650V
75W
2.3Ω
RDS(ON)Typ
■ Features
• Fast switching.
• ESD improved capability.
• Low gate charge. (Typical Data:13nC)
• Low reverse transfer capacitances.(Typical:2.2pF)
• 100% single pulse avalanche energy test.
1.Gate 2.Drain 3.Source
Drain
■ Application
• Power switch circuit of adaptor and charger.
■ Mechanical data
Gate
• Epoxy:UL94-V0 rated flame retardant
• Case : JEDEC TO-251 molded plastic body over
passivated chip
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Source
Inner Equivalent principium Chart
■ Absolute(TC = 25OC unless otherwise specified)
Symbol
VDSS
PARAMETER
CONDITIONS
MHU04N65
UNIT
V
Drain-Source Voltage
650
Continuous Drain Current
4
ID
TC = 100OC
A
Continuous Drain Current
3.2
IDM
VGS
EAS
IAR
Pulsed Drain Current(Note:1)
Gate-Source Voltage
16
±30
V
mJ
A
Single Pulse Avalanche Energy(Note:2)
Avalanche Current(Note:1)
150
2.5
Repetitive Avalanche Energy(Note:1)
EAR
30
mJ
Power Dissipation
Derating factor above 25OC
75
W
Power Dissipation
PD
0.6
5.0
W/OC
V/ns
V
OC
OC
Peak Diode Recovery dv/dt(Note:3)
Gate source ESD
dV/dt
VESD(G-S)
TJ, TSTG
TL
HBM-C = 100pF, R = 1.5kΩ
3000
Operating Junction and Storage Temperature Range
Maximum temperature for soldering
150,-55 ~ +150
300
NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2.L=10.0mH, ID = 5.5A, Start TJ = 25OC.
3.ISD =4A,di/dt ≤100A/us, VDD≤BVDS, Start TJ = 25OC.
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
1
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Electrical characteristics(TC = 25OC unless otherwise specified)
■ OFF Characteristics
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
VDSS
PARAMETER
Drain-Source Breakdown Voltage
Bvdss Temperature Coefficient
VGS = 0V, ID = 250µA
650
V
ID = 250µA, Reference 25OC
VDS = 650V, VGS = 0V, Ta = 25°C
VDS = 520V, VGS = 0V, Ta = 125°C
VGS = +20V
ΔBVDSS /ΔTJ
0.67
V/OC
1
Drain-Source Leakage Current
IDSS
100
10
µA
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
IGSS(F)
IGSS(R)
VGS = -20V
-10
■ ON Characteristics
PARAMETER
CONDITIONS
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2A
Symbol MIN. TYP. MAX. UNIT
VGS(th)
Gate Threshold Voltage
2.0
4.0
2.8
V
RDS(on)
Drain-to-Source On-Resistance
2.3
Ω
Pulse Width tp≤300µs,δ≤2%
■ Dynamic Characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
gfs
VDS = 15V, ID = 2A
Forward Trans conductance
Input Capacitance
3.5
560
50
S
Ciss
Coss
Crss
Output Capacitance
VDS = 25V, VGS = 0V, f = 1.0MHz
pF
Reverse Transfer Capacitance
2.2
■ Resistive Switching Characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
td(ON)
Turn-on Delay Time
Rise Time
14
tr
22
ID = 4A, VDD = 325V, RG = 10Ω
ns
td(OFF)
Turn-off Delay Time
Fail Time
29
tf
15
Qg
Total Gate Charge
13
Qgs
Gate-Source Charge
Gate-Drain (”Miller”) Charge
ID = 4A, VDD = 520V, VGS = 10V
2.7
5.5
nC
Qgd
■ Source-Drain Diode Characteristics
PARAMETER
CONDITIONS
Boby Diode
Symbol MIN. TYP. MAX. UNIT
IS
ISM
VSD
trr
Continuous Source Current
Maximum Pulse Current
Diode Forward Voltage
4
A
Boby Diode
16
1.5
IS = 4.0A, VGS = 0V
V
IS = 4A, TJ = 25OC, dIF/dt = 100A/μs,
VGS = 0V
Reverse recovery time
ns
250
Reverse recovery charge
Qrr
1200
nC
Pulse Width tp≤380µs,δ≤2%
■ Thermal characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
RθJC
RθJA
Junction to Case
1.67
62.5
Thermal Resistance
OC/W
Junction to Ambient
■ Gate-source Zener Diode
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
Gate-Source Breakdown Voltage
IGS = ±1mA(open Drain)
VGSO
30
V
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
2
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Rating and characteristic curves
Fig.1- Maximum Forward Bias Safe Operating Area
100
Fig.2- Maximum Power Dissipation vs Case Temperature
80
70
60
50
40
30
20
10
0
10
1ms
1
10ms
OPERATION IN THIS AREA
100ms
MAY BE LIMITED BY RDS(ON)
DC
0.1
TJ=MAX RATED
TC=25℃Single Pulse
0.01
1
10
1000
100
0
25
50
75
100
125
150
Drain-to-Source Voltage , Vds (V)
Case Temperature , Tc, (C)
Fig.3- Maximum Continuous Drain Current VS Case Temperaure
6
Fig.4- Typical Output Characteristics
6
4.5
3
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
5
4
3
2
1
0
Tc = 25℃
VGS=15V
VGS=7V
VGS=6V
VGS=6.5V
VGS=5.5V
1.5
0
VGS=4.5V
0
25
75
100
125
150
50
0
5
10
15
20
25
Case Temperature , Tc, (C)
Drain-to-Source Voltage , Vds (V)
Fig.5- Maximum Effective Thermal Impendence, Junction to Case
1
50%
20%
10%
0.1
0.01
5%
PDM
2%
t1
t2
1%
Single pulse
NOTES：
DUTY FACTOR ：D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration,(S)
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
3
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Rating and characteristic curves
Fig.6- Maximum Peak Current Capability
100
10
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
150 - TC
125
I = I 25
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
P u lse W id th , (S)
1.00E-01
1.00E+00
1.00E+01
Fig.8- Typical Drain to Source ON Resistance vs Gate
Voltage and Drain Current
Fig.7- Typical Transfer Characteristics
7
6
5
4
3
2
1
9
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
PULSE DURATION = 10μs
DUTY CYCLE =0.5%MAX
VDS=30V
7.5
6
ID= 4A
ID= 2A
ID= 1A
4.5
3
-55℃
+25℃
+150℃
1.5
0
2
3
4
5
6
4
6
8
10
12
14
Gate to Source Voltage, Vgs (V)
Gate to Source Voltag，e, Vgs (V)
Fig.10- Typical Drain to Source ON resistance
vs Junction Temperature
Fig.9- Typical Drain to Source ON resistance vs Drain Current
4
2.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
2.25
2
3.5
3
1.75
1.5
1.25
1
VGS=10V
2.5
2
0.75
0.5
-50
0
50
100
150
0
1
2
3
4
Junction temperature ,Tj (C)
Drain Current , Id (A)
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
4
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Rating and characteristic curves
Fig.11- Typical Threshold Voltage vs Junction Temperature
Fig.12- Typical Breakdown Voltage vs Junction Temperature
1.1
1.15
1.1
1.05
1
1.05
1
0.95
0.9
0.85
0.8
0.95
VGS=0V
ID=250μA
0.75
0.7
VGS=0V
ID=250μA
0.9
0.65
-55
-30
-5
20
45
70
95
120 145 170
-75 -50 -25
0
25
50
75 100 125 150 175
Junction temperature ,Tj (C)
Junction temperature ,Tj (C)
Fig.13- Typical Capacitance vs Drain to Source Voltage
Fig.14- Typical Gate Charge vs Gate to Source Voltage
12
10
8
10000
VDS=520V
1000
100
10
Ciss
6
Coss
4
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
2
Crss
ID=4A
0
1
0
2
4
6
8
10
12
14
16
18
20
0.1
1
10
100
Drain-to-Source Voltage , Vds (V)
Total Gate Charge , Qg, (nC)
Fig.15- Typical Body Diode Transfer Characteristics
Fig.16- Unclamped Inductive Switching Capability
8
7
6
5
4
3
2
1
0
100
10
1
STARTING Tj = 25℃
STARTING Tj = 150℃
+150℃
+25℃
-55℃
If R=0: tAV=(L* IAS) / (1.38V -VDD
)
DSS
DSS
If R≠0: t =(L/R) In[IAS*R/ (1.38V -VDD)+1]
R equals total Series resistance of Drain circuit
AV
0.1
1
1E-06
1E-05
E-04
E-03
1E-02
1E-01
1
0
0.2
0.4
0.6
0.8
1
1.2
5
Time in Avalanche , tav(S)
Source-Drain Voltage, Vsd, (V)
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Test circuit and waveform
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
6
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Test circuit and waveform
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
7
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Package Information
A
C
M
D
B
G
H
E
L
N
N
F
Values (mm)
Item
Min
6.30
5.70
2.10
0.30
0.50
0.30
0.70
1.60
7.70
6.00
4.50
2.10
5.10
2.09
Max
6.90
6.30
2.50
0.60
0.70
0.60
1.00
2.40
9.80
6.30
5.80
3.70
5.50
2.49
A
B
C
D
E
F
G
H
L
M
N
TO-251 Package
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
8
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
The name and content of poisonous and harmful material in products
Hazardous Substance
Part’s Name
Pb
Hg
Cd
Cr(VI)
PBB
PBDE
≤0.1%
≤0.1%
≤0.01%
≤0.1%
≤0.1%
≤0.1%
Limit
Lead Frame
Molding Compound
Chip
○
○
○
○
×
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Wire Bonding
Solder
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
The plumbum element of solder exist in products presently, but within the
Note
range of Eurogrou’ps RoHS.
allowed
Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electr.icity when using it
4. This publication is made by CITC and subject to regular change without
notice.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
9
MHU04N65
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
■ Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
■ CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
■ No license is granted by implication or otherwise under any intellectual property rights of CITC.
■ CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-22M76
Revised Date : 2015/08/24
Revision : C
10
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