MBR10100CT-J [CITC]
10A High Power Schottky Barrier Rectifiers;
| 型号： | MBR10100CT-J |
| 厂家： | 
Chip Integration Technology Corporation |
| 描述： | 10A High Power Schottky Barrier Rectifiers |
| 文件： | 总3页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10100CT-J
10A High Power Schottky Barrier Rectifiers
■ Features
■ Outline
• Low power loss, high efficiency.
TO-220AB-J
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
0.406(10.31)
0.394(10.01)
0.200(5.08)
0.161(4.08)
• Silicon epitaxial planar chip, metal silicon junction.
• Suffix "G" indicates Halogen-free part, ex.MBR10100CTG-J.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.043(1.10)
0.020(0.50)
0.287(7.30)
0.169(4.30)
Marking code
0.039(1.0)
MAX
1
2
3
0.110(2.79)
0.070(1.79)
0.470(11.94)
0.313(7.94)
■ Mechanical data
Φ0.041(1.03)
Φ0.021(0.53)
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB-J molded plastic body over
passivated chip.
0.120(3.04)
0.080(2.04)
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
PIN 1
PIN 3
PIN 2
• Polarity: Color band denotes cathode end.
• Mounting Position : Any.
Dimensions in inches and (millimeters)
• Weight : Approximated 2.25 gram.
■ Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
MBR10100CT-J
Parameter
Marking code
UNIT
V
MBR10100CT
VRRM
VRMS
VDC
100
70
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
100
0.81
0.71
Maximum DC Blocking Voltage
@5.0A, TA = 25OC
@5.0A, TA = 125OC
Maximum Forward Voltage
Operating Temperature
VF
TJ
V
OC
-50 ~ +150
Parameter
Conditions
Symbol
IO
MIN.
TYP.
MAX.
UNIT
A
Forward rectified current
See Fig.1
10
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current
IFSM
125
A
VR = VRRM TA = 25OC
VR = VRRM TA = 125OC
0.1
10
IR
Reverse current
mA
CJ
Diode junction capacitance
Thermal resistance
f=1MHz and applied 4V DC reverse voltage
Junction to ambient
150
30
pF
OC/W
OC
RθJA
TSTG
Storage temperature
-55
+175
Document ID : DS-11K4N
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C1
1
MBR10100CT-J
10A High Power Schottky Barrier Rectifiers
■ Rating and characteristic curves
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
Fig.1 - Forward Current Derating Curve
150
12
10
RESISTIVE OR INDUCTIVE LOAD
125
100
8.0
75
50
25
0
6.0
4.0
2.0
single phase half wave 60Hz
resistive or inductive load
0
25
50
75
100
125
150
175
1
10
100
Lead Temperature ( OC)
Number of Cycles at 60 Hz
Fig. 4 - Reverse Characteristics
Fig. 3 - Instantaneous Forward
Characteristics
100
10
50
10
TJ=150OC
TJ=125OC
1
TJ=125OC
0.1
TJ=75OC
TJ=25OC
0.01
0.001
0.0001
1.0
0.5
TJ=25OC
0.8
0
10
20
30
40
50
60
70
80 90 100
Percent of Rated Peak Reverse Voltage ( %)
0
0.2
0.4
0.6
1.0
Instantaneous Forward Voltage (Volts)
Document ID : DS-11K4N
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C1
2
MBR10100CT-J
10A High Power Schottky Barrier Rectifiers
■ CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
■ Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
■ CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
■ No license is granted by implication or otherwise under any intellectual property rights of CITC.
■ CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-11K4N
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C1
3
相关型号：
MBR10100CTP-G
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, ITO-220S, 3 PIN
DIODES
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