CSF30S45CT-A [CITC]

Super Low Barrier High Voltage Power Rectifier;
CSF30S45CT-A
型号: CSF30S45CT-A
厂家: Chip Integration Technology Corporation    Chip Integration Technology Corporation
描述:

Super Low Barrier High Voltage Power Rectifier

文件: 总3页 (文件大小:501K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CSF30S45CT-A  
Super Low Barrier High Voltage Power Rectifier  
Chip Integration Technology Corporation  
Main Product Characteristics  
Outline  
K
L
ITO-220AB  
IF(AV)  
VRRM  
TJ  
2x15A  
Dimensions in inches(millimeters)  
symbol  
A
ØP  
Min  
Max  
45V  
150OC  
0.41V  
A
B
0.390(9.9)  
0.268(6.8)  
0.583(14.8)  
0.512(13.0)  
0.102(2.6)  
0.101(2.55)  
0.043(1.1)  
0.043(1.1)  
0.020(0.5)  
0.098(2.49)  
0.169(4.3)  
0.112(2.85)  
0.098(2.5)  
0.020(0.5)  
0.130(3.3)  
0.408(10.36)  
0.283(7.2)  
0.598(15.2)  
0.543(13.8)  
0.150(3.8)  
0.112(2.85)  
0.053(1.35)  
0.053(1.35)  
0.028(0.7)  
0.102(2.59)  
0.185(4.7)  
0.128(3.25)  
0.114(2.9)  
0.028(0.7)  
0.134(3.5)  
F
B
C
C
D
E
V(Typ)  
Marking code  
1
2
3
F
G
H
I
M
G
Features  
E
H
J
D
K
Low forward voltage drop.  
Excellent high temperature stability.  
Fast switching capability.  
I
L
M
N
ØP  
J
N
Lead free in compliance with EU RoHS.  
Alternate  
K
Dimensions in inches(millimeters)  
L
symbol  
A
ØP  
Min  
Max  
A
B
0.383(9.72) 0.404(10.27)  
F
Mechanical data  
0.248(6.3)  
0.571(14.5)  
0.516(13.1)  
-
0.094(2.4)  
0.039(1.0)  
0.039(1.0)  
0.020(0.5)  
0.095(2.41)  
0.169(4.3)  
0.055(1.4)  
0.091(2.3)  
0.014(0.35)  
0.122(3.1)  
0.272(6.9)  
0.610(15.5)  
0.547(13.9)  
0.161(4.1)  
0.126(3.2)  
0.051(1.3)  
0.051(1.3)  
0.035(0.9)  
0.105(2.67)  
0.189(4.8)  
0.122(3.1)  
0.117(2.96)  
0.031(0.8)  
0.142(3.6)  
B
C
C
D
E
Epoxy : UL94-V0 rated flame retardant.  
Case : JEDEC ITO-220AB molded plastic body.  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026.  
Polarity: As marked.  
Weight : Approximated 2.25 gram.  
Marking code  
1
2
3
F
G
H
I
M
G
E
H
J
D
K
I
L
M
N
ØP  
J
N
Dimensions in inches and (millimeters)  
Maximum ratings and electrical characteristics  
Rating at 25OC ambient temperature unless otherwise specified.  
Circuit Diagram  
Parameter  
Conditions  
Symbol  
VRWM  
IO  
IFSM  
CSF30S45CT-A  
UNIT  
Working peak reverse voltage  
Forward rectified current (total device)  
45  
30  
V
A
8.3ms single half sine-wave superimposed on  
rate load (JEDEC method)  
Forward surge current (per diode)  
320  
A
Peak repetitive reverse surge current  
(per diode)  
IRRM  
2us - 1kHz  
2
A
OC/W  
OC/W  
OC  
RθJC  
RθJA  
TSTG  
TJ  
Thermal resistance (per diode)  
Thermal resistance (per diode)  
Storage temperature  
Junction to case  
8
Junction to ambient  
50  
-55 ~ +150  
-55 ~ +150  
OC  
Operating Junction temperature  
Parameter  
Conditions  
IF = 3A, TJ = 25OC  
IF = 15A, TJ = 25OC  
IF = 15A, TJ = 125OC  
VR = 45V TJ = 25OC  
VR = 45V TJ = 125OC  
IR = 0.5mA, TJ = 25OC  
Symbol  
VF  
MIN.  
TYP.  
330  
450  
410  
MAX.  
UNIT  
mV  
Forward voltage drop (per diode)  
470  
420  
0.5  
IR  
Reverse current (per diode)  
mA  
V
100  
Reverse Breakdown Voltage (per diode)  
VBR  
45  
Document ID : DS-11KAI  
Revised Date : 2016/11/17  
Revision : C8  
1
CSF30S45CT-A  
Super Low Barrier High Voltage Power Rectifier  
Chip Integration Technology Corporation  
Rating and characteristic curves  
Fig. 2 - Instantaneous Forward  
Characteristics (per diode)  
Fig.1 - Forward Current Derating Curve (per diode)  
100  
10  
1
18  
15  
12  
9
TA=150°C  
TA=125°C  
TA=100°C  
6
3
TA=85°C  
TA=50°C  
0.1  
0
25  
50  
75  
100  
125  
OC)  
150  
175  
TA=25°C  
Case Temperature,TC  
(
0.01  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
Instantaneous Forward Voltage (Volts)  
Fig. 3 - Reverse Characteristics (per diode)  
Fig. 4 - ForwardPowerDissipation  
1000  
10  
9
8
7
6
5
4
3
2
1
0
100  
10  
TA=150OC  
TA=125OC  
TA=85OC  
1
0.1  
TA=50OC  
TA=25OC  
Per diode  
20  
0.01  
0
5
10  
15  
25  
0
10  
20  
30  
40  
50  
Average Forward Current, IF (A)  
Reverse Voltage (V)  
Fig. 5 - Junction Capacitance  
10000  
1000  
100  
10  
Per diode  
1
0
5
10  
15  
20  
25  
Reverse Voltage, VR (V)  
Document ID : DS-11KAI  
Revised Date : 2016/11/17  
Revision : C8  
2
CSF30S45CT-A  
Super Low Barrier High Voltage Power Rectifier  
Chip Integration Technology Corporation  
Marking Information  
CSF30S45CT-A : Product type marking code  
: CITC Logo  
CSF30S45CT-A  
Ordering / Packing Information  
Part number  
Case  
Q'TY/Tube (PCS)  
50  
Q'TY/Box (PCS)  
1000  
Q'TY/Carton (PCS)  
5000  
Halogen  
CSF30S45CT-A  
ITO-220AB  
Halogen free  
CSF30S45CTG-A  
Notes:  
1. For packaging details please reference our website at http://www.citcorp.com.tw/tchinese/products/index.php  
CITC reserves the right to make changes to this document and its products and specifications at any  
time without notice.  
Customers should obtain and confirm the latest product information and specifications before final  
design, purchase or use.  
CITC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does CITC assume any liability for application assistance or customer product  
design.  
CITC does not warrant or accept any liability with products which are purchased or used for any  
unintended or unauthorized application.  
No license is granted by implication or otherwise under any intellectual property rights of CITC.  
CITC products are not authorized for use as critical components in life support devices or systems  
without express written approval of CITC.  
http://www.citcorp.com.tw/  
Tel:886-3-5600628  
Fax:886-3-5600636  
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)  
Document ID : DS-11KAI  
Revised Date : 2016/11/17  
Revision : C8  
3

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