CSF20L60CT-A [CITC]

20A Low Barrier Diode;
CSF20L60CT-A
型号: CSF20L60CT-A
厂家: Chip Integration Technology Corporation    Chip Integration Technology Corporation
描述:

20A Low Barrier Diode

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中文:  中文翻译
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CSF20L60CT-A  
20A Low Barrier Diode  
Features  
Outline  
K
L
ITO-220AB  
Dimensions in inches(millimeters)  
Low forward voltage drop.  
symbol  
A
ØP  
Min  
Max  
Excellent high temperature stability.  
Fast switching capability.  
Suffix "G" indicates Halogen-free part, ex.CSF20L60CTG-A.  
Lead-free parts meet environmental standards of  
MIL-STD-19500 /228  
A
B
0.390(9.9)  
0.268(6.8)  
0.583(14.8)  
0.512(13.0)  
0.102(2.6)  
0.101(2.55)  
0.043(1.1)  
0.043(1.1)  
0.020(0.5)  
0.098(2.49)  
0.169(4.3)  
0.112(2.85)  
0.098(2.5)  
0.020(0.5)  
0.130(3.3)  
0.408(10.36)  
0.283(7.2)  
0.598(15.2)  
0.543(13.8)  
0.150(3.8)  
0.112(2.85)  
0.053(1.35)  
0.053(1.35)  
0.028(0.7)  
0.102(2.59)  
0.185(4.7)  
0.128(3.25)  
0.114(2.9)  
0.028(0.7)  
0.134(3.5)  
F
B
C
C
D
E
Marking code  
1
2
3
F
G
H
I
M
G
E
H
J
D
K
I
L
M
N
ØP  
J
N
Mechanical data  
Alternate  
K
Dimensions in inches(millimeters)  
L
symbol  
Epoxy : UL94-V0 rated flame retardant.  
Case : JEDEC ITO-220AB molded plastic body.  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026.  
Polarity: As marked.  
Mounting Position : Any.  
A
ØP  
Min  
Max  
A
B
0.383(9.72) 0.404(10.27)  
F
0.248(6.3)  
0.571(14.5)  
0.516(13.1)  
-
0.094(2.4)  
0.039(1.0)  
0.039(1.0)  
0.020(0.5)  
0.095(2.41)  
0.169(4.3)  
0.055(1.4)  
0.091(2.3)  
0.014(0.35)  
0.122(3.1)  
0.272(6.9)  
0.610(15.5)  
0.547(13.9)  
0.161(4.1)  
0.126(3.2)  
0.051(1.3)  
0.051(1.3)  
0.035(0.9)  
0.105(2.67)  
0.189(4.8)  
0.122(3.1)  
0.117(2.96)  
0.031(0.8)  
0.142(3.6)  
B
C
C
D
E
Marking code  
1
2
3
F
G
H
I
M
G
E
Weight : Approximated 2.25 gram.  
H
J
D
K
I
L
M
N
ØP  
J
N
PIN 1  
PIN 3  
PIN 2  
Maximum ratings and electrical characteristics  
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Parameter  
Marking code  
Conditions  
Symbol  
CSF20L60CT-A  
CSF20L60CT  
UNIT  
V
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VRM  
IO  
60  
Forward rectified current (total device)  
20  
A
A
8.3ms single half sine-wave superimposed on  
rate load (JEDEC method)  
Forward surge current (per diode)  
IFSM  
IRRM  
250  
Peak repetitive reverse surge current  
(per diode)  
2us - 1kHz  
3
A
Repetitive peak avalanche energy  
(per diode)  
1us, 25OC  
7000  
PARM  
W
OC/W  
OC  
RθJC  
Thermal resistance(1) (per diode)  
Operating and Storage temperature  
Junction to case  
4
TJ, TSTG  
-65 ~ +150  
Parameter  
Conditions  
IF = 10A, TJ = 25OC  
IF = 10A, TJ = 125OC  
IF = 20A, TJ = 25OC  
VR = VRRM TJ = 25OC  
VR = VRRM TJ = 125OC  
Symbol  
VF  
MIN.  
TYP.  
MAX.  
UNIT  
mV  
650  
560  
790  
0.5  
Forward voltage drop (per diode)  
IR  
Reverse current (per diode)  
mA  
100  
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.  
Document ID : DS-11KA5  
Revised Date : 2015/05/25  
Revision : C6  
1
CSF20L60CT-A  
20A Low Barrier Diode  
Rating and characteristic curves  
Fig. 1 - Instantaneous Forward  
Characteristics (per diode)  
Fig.2 - Forward Current Derating Curve  
100  
10  
30  
20  
10  
RθJA = RθJC  
Total Device  
TA=150°C  
TA=125°C  
RθJA = RθJC  
Per Element  
1
TA=100°C  
TA=85°C  
TA=50°C  
TA=25°C  
RθJA = 16OC/W  
Per Element  
0.1  
25  
50  
75  
100  
125  
OC)  
150  
Ambient Temperature,TA  
(
0.01  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
Instantaneous Forward Voltage,VF (Volts)  
Fig. 3 - Reverse Characteristics (per diode)  
Fig. 4 - Maximum Avalanche Power Curve  
100000  
100  
TA=150OC  
TA=125OC  
10000  
1000  
100  
10  
1
TA=100OC  
TA=85OC  
TA=50OC  
0.1  
10  
TA=25OC  
50  
0.01  
1
0.01  
0.1  
1
10  
100  
1000  
0
10  
20  
30  
40  
60  
Reverse Voltage,VR (V)  
Pulse Duration,TP (us)  
Fig. 5 - Total Capacitance VS.  
Reverse Voltage  
10000  
1000  
100  
f = 1MHz  
10  
0
10  
20  
30  
40  
50  
60  
Reverse Voltage,VR (V)  
Document ID : DS-11KA5  
Revised Date : 2015/05/25  
Revision : C6  
2
CSF20L60CT-A  
20A Low Barrier Diode  
CITC reserves the right to make changes to this document and its products and specifications at any  
time without notice.  
Customers should obtain and confirm the latest product information and specifications before final  
design, purchase or use.  
CITC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does CITC assume any liability for application assistance or customer product  
design.  
CITC does not warrant or accept any liability with products which are purchased or used for any  
unintended or unauthorized application.  
No license is granted by implication or otherwise under any intellectual property rights of CITC.  
CITC products are not authorized for use as critical components in life support devices or systems  
without express written approval of CITC.  
http://www.citcorp.com.tw/  
Tel:886-3-5600628  
Fax:886-3-5600636  
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)  
Document ID : DS-11KA5  
Revised Date : 2015/05/25  
Revision : C6  
3

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