CS10S280CT-A [CITC]
Super Low Barrier High Voltage Power Rectifier;
| 型号： | CS10S280CT-A |
| 厂家： | 
Chip Integration Technology Corporation |
| 描述： | Super Low Barrier High Voltage Power Rectifier |
| 文件： | 总3页 (文件大小：469K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CS10S280CT-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
Main Product Characteristics
■ Outline
IF(AV)
VRRM
TJ
2x5A
Dimensions in inches(millimeters)
TO-220AB
K
symbol
Min
Max
L
ØP
280V
175OC
0.64V
A
A
B
0.398(10.1)
0.236(6.0)
0.579(14.7)
0.543(13.8)
0.143(3.63)
0.104(2.64)
0.335(8.5)
0.046(1.17)
0.028(0.71)
0.098(2.49)
0.176(4.47)
0.046(1.17)
0.102(2.6)
0.019(0.28)
0.147(3.74)
0.406(10.3)
0.252(6.4)
0.594(15.1)
0.551(14.0)
0.159(4.03)
0.112(2.84)
0.350(8.9)
0.054(1.37)
0.036(0.91)
0.102(2.59)
0.184(4.67)
0.054(1.37)
0.110(2.8)
0.021(0.48)
0.155(3.94)
F
C
D
E
B
C
V(Typ)
Marking code
F
G
G
H
I
1
2
3
C
M
H
E
■ Features
J
I
K
D
L
• Low forward voltage drop.
M
N
ØP
• Excellent high temperature stability.
• Fast switching capability.
J
N
Alternate
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Dimensions in inches(millimeters)
K
symbol
Min
Max
0.413(10.5)
0.268(6.8)
L
ØP
A
A
B
0.394(10.0)
0.228(5.8)
0.570(14.48) 0.625(15.87)
0.519(13.18) 0.558(14.18)
F
■ Mechanical data
C
D
E
B
C
0.089(3.5)
0.100(2.54)
0.330(8.38)
0.045(1.15)
0.029(0.75)
0.095(2.42)
0.160(4.07)
0.045(1.15)
0.080(2.04)
0.013(0.33)
0.148(3.75)
0.099(3.9)
0.120(3.04)
0.350(8.9)
0.060(1.52)
0.037(0.95)
0.105(2.66)
0.190(4.82)
0.055(1.39)
0.110(2.8)
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
Marking code
F
G
G
H
I
1
2
3
M
H
E
J
I
K
D
L
M
N
ØP
0.019(0.52)
0.156(3.95)
J
N
PIN 2
• Weight : Approximated 2.25 gram.
PIN 1
PIN 3
■ Maximum ratings and electrical characteristics
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Conditions
Symbol
CS10S280CT-A
CS10S280CT
UNIT
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VRM
IO
280
Forward rectified current (total device)
10
A
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current (per diode)
IFSM
280
Peak repetitive reverse surge current
(per diode)
IRRM
2us - 1kHz
3
A
OC/W
OC
RθJC
Thermal resistance(1) (per diode)
Operating and Storage temperature
Junction to case
2
TJ, TSTG
-55 ~ +175
Parameter
Conditions
IF = 5A, TJ = 25OC
IF = 5A, TJ = 125OC
IF = 10A, TJ = 25OC
VR = VRRM, TJ = 25OC
VR = VRRM, TJ = 125OC
IF = 0.5A, IR = 1A, IRR = 0.25A
IF = 1A, VR = 30V, di/dt = 100A/us, TJ = 25OC
Symbol
VF
MIN.
TYP.
640
MAX.
UNIT
mV
860
710
920
0.2
25
Forward voltage drop (per diode)
IR
trr
Reverse current (per diode)
mA
ns
25
28
30
Reverse recovery time (per diode)
35
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Document ID : DS-11KFN
Revised Date : 2015/08/06
Revision : C4
1
CS10S280CT-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
■ Rating and characteristic curves
Fig. 1 - Instantaneous Forward
Characteristics
Fig.2 - Forward Current Derating Curve (per diode)
100
6
10
TA=150°C
4
2
TA=125°C
1
TA=100°C
TA=75°C
0.1
TA=50°C
50
75
100
125
150
OC)
175
TA=25°C
Ambient Temperature,TA
(
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics
100
TA=150OC
TA=125OC
10
1
TA=75OC
TA=50OC
0.1
0.01
0.001
TA=25OC
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage ( %)
Document ID : DS-11KFN
Revised Date : 2015/08/06
Revision : C4
2
CS10S280CT-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
■ CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
■ Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
■ CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
■ No license is granted by implication or otherwise under any intellectual property rights of CITC.
■ CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-11KFN
Revised Date : 2015/08/06
Revision : C4
3
相关型号：
CS11-E2GA222MYGS
Ceramic Capacitor, Multilayer, Ceramic, 20% +Tol, 20% -Tol, E, -55/+20% TC, 0.0022uF, Through Hole Mount, 4128, RADIAL LEADED, ROHS COMPLIANT
TDK
CS11-E2GA222MYGSA
Mid-high Voltage Ceramic Capacitors Disk type with lead Safety standard approved
TDK
CS11-E2GA222MYNS
Ceramic Capacitor, Multilayer, Ceramic, 20% +Tol, 20% -Tol, E, -55/+20% TC, 0.0022uF, Through Hole Mount, 4128, RADIAL LEADED, ROHS COMPLIANT
TDK
CS11-E2GA222MYNSA
Mid-high Voltage Ceramic Capacitors Disk type with lead Safety standard approved
TDK
CS11-E2GA222MYVS
Ceramic Capacitor, Ceramic, 20% +Tol, 20% -Tol, E, -55/+20% TC, 0.0022uF, Through Hole Mount, 4128, RADIAL LEADED, ROHS COMPLIANT
TDK
CS11-E2GA222MYVSA
Mid-high Voltage Ceramic Capacitors Disk type with lead Safety standard approved
TDK
©2020 ICPDF网 联系我们和版权申明