CHT2301WPT [CHENMKO]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | CHT2301WPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总3页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT2301WPT
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts CURRENT 2.3 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-70/SOT-323
FEATURE
* Small surface mounting type. (SC-70/SOT-323)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
* Rugged and reliable.
0.65
1.3±0.1
2.0±0.2
0.65
* High saturation current capability.
* Voltage controlled small signal switch.
0.3±0.1
1.25±0.1
CONSTRUCTION
* P-Channel Enhancement
MARKING
* 21
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
D
3
2.0~2.45
CIRCUIT
1
G
SC-70/SOT-323
Dimensions in millimeters
2
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHT2301WPT
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
Maximum Drain Current - Continuous
- Pulsed
(Note 1)
(Note 2)
-2.3
-10
ID
A
A
IS
(Note 1)
-1.6
Drain-Source Diose Forward Current
PD
(Note 1)
1250
mW
°C
Maximum Power Dissipation
TJ
STG
,T
Operating and Storage Temperature Range
-55 to 150
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
Thermal characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
85
°C/W
2004-8
RATING CHARACTERISTIC CURVES ( CHT2301WPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage VGS
V
= 0 V, I
D
= -250 µA
-20
DSS
I
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V
-1
µ
A
GSS
I
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSS
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
-0.6
V
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
130
190
1.0
V
V
GS=-4.5V, I
GS=-2.5V, I
D
=-2.8A
=-2.0A
RDS(ON)
m
Ω
Static Drain-Source On-Resistance
Diose Forward Voltage
D
VSD
VDS = 0V, IS = -1.0 A
V
SWITCHING CHARACTERISTICS (Note 3)
4.32
1.06
0.84
13
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=-10V, I
GS=-4.5V
D
=-1A
nC
nS
Qgs
gd
Q
ton
tr
Turn-On Time
Rise Time
VDD
-10V
=
36
,
D
I = -1.0A
GEN
V
= -4.5 V
toff
tf
Turn-Off Time
Fall Time
42
Ω Ω
R = 10 , RGEN= 10
L
34
Note : 3. Guaranteed by design , not subject to production trsting
RATING CHARACTERISTIC CURVES ( CHT2301WPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
10
10
8
J=-55°C
T
J=125°C
T
GS=
V
5.0V
4.5V
4.0V
3.5V
3.0V
8
6
4
2
J=25°C
T
6
2.5V
GS=
V
4
2
0
2.0V
GS=
V
0
0
1
2
3
4
5
6
2.0
3.0
4.0
5.0
6.0
0
1.0
VDS , DRAIN-SOURCE VOLTAGE (V)
VGS , GATE-TE-SOURCE VOLTAGE (V)
Figure 3. Breakdown Voltage Variation
with Temperature
Figure 4. On-Resistance Variation with
Temperature
1.15
1.8
VGS=-4.5V
ID=-2.8A
ID=-250uA
1.10
1.05
1.00
0.95
1.6
1.4
1.2
1.0
0.90
0.85
0.8
0.6
0.80
-50
0.4
-50
-25
0
25
50
75
100
125
-25
0
25
T , JUNCTION TEMPERATURE (°C)
J
50
75
100
125
T
J
,
JUNCTION TEMPERATURE (°C)
Figure 5. Gate Threshold Variation with
Temperature
Figure 6. Gate Charge
5
4
1.12
VD S =10V
ID =1.0A
ID=-250uA
1.09
1.06
1.03
3
1.00
0.97
0.94
2
1
0
0.91
0
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100
125
Qg , TOTAL GATE CHARGE (nC)
T
J
, JUNCTION TEMPERATURE (°C)
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