CHM09N6NPT [CHENMKO]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CHM09N6NPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM09N6NPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 600 Volts CURRENT 9 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
D2PAK
FEATURE
* Small flat package. (D2PAK)
0.420(10.67)
0.380(9.69)
0.190(4.83)
* High density cell design for extremely low RDS(ON).
0.160(4.06)
0.055(1.40)
* Rugged and reliable.
0.245(6.22)
0.045(1.14)
MIN.
K
0.055(1.40)
0.047(1.19)
CONSTRUCTION
* N-Channel Enhancement
3
1
2
0.110(2.79)
0.025(0.64)
0.018(0.46)
0.110(2.79)
0.080(2.03)
0.090(2.29)
0.100(2.54)
0.095(2.41)
0.037(0.940)
0.027(0.686)
D
(3)
1 Gate
CIRCUIT
2 Source
3 Drain ( Heat Sink )
(1)
G
Dimensions in inches and (millimeters)
D2PAK
(2)
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM09N6NPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
600
V
VGSS
±30
V
Maximum Drain Current - Continuous
- Pulsed
9
ID
A
(Note 3)
35
PD
TJ
156
W
°C
°C
Maximum Power Dissipation
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
2006-02
RATING CHARACTERISTIC CURVES ( CHM09N6NPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
600
DSS
I
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VGS = 30V,VDS = 0 V
VGS = -30V, VDS = 0 V
50
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
2
4
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
1.0
5
1.2
V
GS=10V, I
D
=6A
Ω
Static Drain-Source On-Resistance
Forward Transconductance
gFS
S
VDS =50V, ID = 6A
SWITCHING CHARACTERISTICS (Note 4)
73
6
85
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=480V, I =2A
D
nC
nS
Qgs
GS=10V
gd
Q
45
23
26
105
22
ton
tr
Turn-On Time
Rise Time
45
50
VDD
200V
=
,
D
I = 9A
GS
V
= 10 V
toff
tf
Turn-Off Time
Fall Time
165
45
Ω
GEN= 9.1
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
9
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 9A
GS
(Note 2)
VSD
1.5
V
V
= 0 V
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