CHEMF7PT [CHENMKO]
Power Management (Dual Transistor); 电源管理（ Dual晶体管）
| 型号： | CHEMF7PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Power Management (Dual Transistor) |
| 文件： | 总5页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHEMF7PT
Power Management (Dual Transistor)
Tr1:VOLTAGE 12 Volts CURRENT 0.5 Ampere
DTr2:VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Power management circuit
FEATURE
* Small surface mounting type. (SOT-563)
* Power switching circuit in a single package.
SOT-563
* Mounting cost and area can be cut in half.
* Both the 2SC5585 & CHDTC123E in one package.
* Built in bias resistor(R1=2.2kΩ, Typ. )
(1)
(5)
(4)
0.50
1.5~1.7
0.50
0.9~1.1
MARKING
(3)
* F7
0.15~0.3
1.1~1.3
0.5~0.6
0.09~0.18
6
4
3
CIRCUIT
1.5~1.7
R1 R2
Tr1
DTr2
1
SOT-563
Dimensions in millimeters
2SC5585 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
15
UNIT
VCBO
V
Collector-base voltage
−
VCEO
VEBO
12
−
Collector-emitter voltage
Emitter-base voltage
V
V
6
−
500
mA
I C
−
−
DC Output current
NOTE.1
Icp
1000
NOTE.2
mW
OC
OC
−
−55
−
150
+150
150
PC
Total power dissipation
Storage temperature
TSTG
Junction temperature
TJ
Note
1. Single pulse Pw=1ms
2004-07
2. 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
CHDTC123E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Supply voltage
CONDITIONS
MIN.
MAX.
50
UNIT
VCC
−
V
V
VIN
Input voltage
-10
−
+20
100
100
150
IO
DC Output current
mA
−
IC(Max.)
PC
NOTE.1
NOTE.2
−
mW
OC
Power dissipation
TSTG
Storage temperature
−55
+150
OC
Junction temperature
−
TJ
150
Note
1. Characteristics of built-in transistor.
2. Each terminal mounter on a recommended land.
2SC5585 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IC=1mA
12
BVCEO
BVCBO
V
V
V
−
−
−
Collector-emitter breakdown voltage
Collector-base breakdown voltage
−
IC=10uA
IE=10uA
15
6
Emitter-base breakdown voltage
BVEBO
ICBO
−
−
−
−
VCB=15V
100
100
680
250
−
nA
nA
−
Collector cut-off current
Emitter cut-off current
VEB=6V
IEBO
hFE
−
−
VCE=2V,IC=10mA
IC=200mA,IB=10mA
VCB=10V,IE=0mA,f=1MHZ
DC current gain
270
−
VCE(sat)
Collector-emitter saturation voltage
Collector output capacitance
90
mV
pF
−
−
Cob
f T
7.5
MHz
−
Transition frequency
320
VCE=2V,IE=-10mA,f=100MHZ
−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
CHDTC123E CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
SYMBOL
VIoff)
−
−
−
Input off voltage
Input on voltage
IO=100uA; VCC=5.0V
IO=20mA; VO=0.3V
IO=10mA; II=0.5mA
V
V
0.5
VI(on)
3.0
0.3
3.8
0.5
−
−
VO(on)
II
Output voltage
Input current
−
−
−
0.1
−
V
mA
uA
−
VI=5V
IC(off)
G1
Output current
DC current gain
Input resistor
VI=0V; VCC=50V
IO=20mA; VO=5.0V
−
20
−
R1
2.2
KΩ
−
−
−
R2/R1
f T
Resistor ratio
0.8
−
1.0
1.2
−
Transition frequency
IE=-5mA, VCE=10.0V
f==100MHz
250
MHz
Note
Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHEMF7PT )
2SC5585 Typical Electrical Characteristics
Fig.2 DC current gain vs. collector
current
Fig.1 Ground emitter propagation
characteristics
1000
Ta=125OC
1000
100
10
VCE=2V
pulsed
VCE=2V
pulsed
O
25 C
-40OC
100
10
O
O
O
1
1
1
1000
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
100
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
1000
O
IC/IB=20
pulsed
Ta=25 C
pulsed
100
10
1
100
Ta=125OC
Ta=25OC
Ta=-40OC
Ta=125OC
Ta=25OC
10
1
Ta=-40OC
1
1000
1
1000
10
100
10
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
RATING CHARACTERISTIC CURVES ( CHEMF7PT )
2SC5585 Typical Electrical Characteristics
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product vs.
collector current
1000
1000
100
10
IC/IB=20
pulsed
VCE=2V
Ta=25OC
pulsed
Ta=-40OC
Ta=25OC
Ta=125OC
100
10
1
1
1
1000
10
100
1
1000
10
100
COLLECTOR CURRENT : IC(mA)
EMITTER CURRENT : IE(mA)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
IE=0A
f=1MHZ
O
Ta=25 C
100
Cib
10
Cob
1
1
1000
COLLECTOR TO BASE VOLTAGE : VCB(V)
10
100
RATING CHARACTERISTIC CURVES ( CHEMF7PT )
CHDTC123E Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
100
10m
VO=0.3V
V
CC=5V
5m
50
2m
Ta=100°C
25°C
−40°C
20
10
1m
500µ
Ta=−40°C
25°C
100°C
5
2
200µ
100µ
50µ
1
20µ
500m
10µ
5µ
200m
100m
2µ
1µ
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
0
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
INPUT VOLTAGE : VI(off) (V)
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
1k
1
V
O
=5V
lO
/lI
=20
500
500m
200m
100m
50m
200
100
Ta=100°C
25°C
−40°C
50
Ta=100°C
25°C
−40°C
20
10
5
20m
10m
5m
2m
1m
2
1
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I (A)
O
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