CHDTD143TKPTGP [CHENMKO]
Transistor,;
| 型号： | CHDTD143TKPTGP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, 晶体 晶体管 |
| 文件： | 总3页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHDTD143TKPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 500 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SOT-23)
* High current gain.
SOT-23
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated NPN transistors in one package.
* Built in single resistor(R1=4.7kΩ, Typ. )
(1)
(2)
(3)
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
(
)
(
)
.055 1.40
.028 0.70
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
.086 (2.20)
Emitter
2
Base
1
(
)
.045 1.15
CIRCUIT
(
)
.033 0.85
TR
R1
3
SOT-23
Collector
Dimensions in inches and (millimeters)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
VALUE
SYMBOL
PARAMETER
CONDITIONS
UNIT
VCBO
Collector-Base voltage
50
40
5
V
V
V
VCEO
VEBO
Collector-Emitter voltage
Emitter-Base voltage
IC(Max.)
PD
Collector current
500
200
mA
mW
OC
Tamb ≤ 25 OC, Note 1
Power dissipation
Storage temperature
Junction temperature
-55 ~ +150
-55 ~ +150
TSTG
TJ
OC
OC/W
RθJ-S
, Note 1
Thermal resistance
junction - soldering point 140
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-06
RATING CHARACTERISTIC ( CHDTD143TKPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
IC=50uA
MIN.
50
TYP.
MAX.
UNIT
−
−
BVCBO
BVCEO
Collector-base breakdown voltage
−
−
−
V
V
V
40
Collector-emitter breakdown voltage IC=1.0mA
IE=50uA
BVEBO
ICBO
Emitter-base breakdown voltage
5.0
−
−
−
−
−
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
VCB=50V
0.5
0.5
0.3
600
6.11
−
uA
uA
V
IEBO
VEB=4V
−
VCE(sat)
IC/IB=50mA/2.5mA
IC=50mA; VCE=5.0V
−
hFE
R1
f T
100
3.29
−
250
4.7
KΩ
Input resistor
Transition frequency
IE=-50mA, VCE=10.0V
f=100MHz
200
MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTD143TKPT )
Typical Electrical Characteristics
Fig.1 DC current gain vs. collector
Fig.2 Collector-emitter voltage vs.
current
collector current
1k
1
V
CE =5V
lO/lI=20
500
500m
200m
200
100
50
Ta=100OC
25OC
Ta=100OC
25OC
100m
50m
-40OC
-40OC
20
10
5
20m
10m
5m
2
1
2m
1m
500u 1m 2m
5m 10m 20m
50m 100m 200m 500m
500u 1m 2m
5m 10m 20m
50m 100m 200m 500m
COLLECTOR CURRENT : IC (uA)
COLLECTOR CURRENT : IC (uA)
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