2SC2411KRGP [CHENMKO]
Transistor,;
| 型号： | 2SC2411KRGP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总3页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
2SC2411KGP
SURFACE MOUNT
Medium Power NPN Transistor
VOLTAGE 32 Volts CURRENT 0.5 Ampere
APPLICATION
* Medium Power Amplifier .
FEATURE
* Surface mount package. (SOT-23)
* Low saturation voltage V
SOT-23
* Low cob. Cob=6.0pF(Typ.)
CE(sat)=0.4V(max.)(IC=500mA)
* PC= 200mW (mounted on ceramic substrate).
* High saturation current capability.
(1)
(2)
CONSTRUCTION
(3)
* NPN Silicon Transistor
* Epitaxial planner type
MARKING
(
)
(
)
.055 1.40
.028 0.70
* HFE(P):PT
* HFE(Q):ND
* HFE(R):C4G-
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
.086 (2.20)
C
(3)
(
)
.045 1.15
CIRCUIT
(
)
.033 0.85
SOT-23
Dimensions in millimeters
(1)
(2)
E
B
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Open Emitter
SYMBOL
VCBO
MIN.
-
MAX.
40
UNITS
Volts
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Open Base
VCEO
VEBO
IC
-
32
5
Volts
Volts
mAmps
mAmps
mAmps
mW
Open Collector
-
-
500
500
10
Peak Collector Current
Peak Base Current
ICM
-
-
IBM
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TA ≤ 25OC; Note 1
PTOT
TSTG
TJ
-
350
+150
+150
+150
-55
-
oC
oC
TAMB
-55
oC
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2002-10
RATING CHARACTERISTICS ( 2SC2411KGP )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
Collector Cut-off Current
CONDITION
IE=0; VCB=20V
SYMBOL
ICBO
MIN.
-
TYPE
-
MAX.
1.0
UNITS
uA
Emitter Cut-off Current
DC Current Gain
IC=0; VEB=4V
ICEO
-
-
-
1.0
uA
VCE=3V; Note 1
IC=100mA; Note 2
hFE
82
390
Collector-Emitter Saturation Voltage
Base-Emitter Saturatio Voltage
Output Collector Capacitance
Transition Frequency
IC=500mA; IB=50mA
IC=500mA; IB=50mA
VCEsat
VBEsat
Cob
-
-
-
-
-
-
0.4
1.1
-
Volts
Volts
pF
IE=ie=0; VCB=12V;
f=1MHz
6.0
250
IC=20mA; VCE=5V;
f=100MHz
fT
-
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390
RATING CHARACTERISTIC CURVES ( 2SC2411KGP )
Fig.2 Grounded emitter output
characteristics (1)
Fig.3 Grounded emitter output
characteristics (2)
Fig.1 Grounded emitter propagation
characteristics
1000
500
400
300
200
100
0
100
Ta
=
25OC
VCE=6V
Ta
=
25OC
500
A
m
0
4
.
0
0
200
100
50
2mA
1.8mA
1.6mA
1.4mA
1.2mA
Ta=
100OC
A
m
0
3
.
25OC
80OC
25OC
20
10
5
A
m
5
2
.
0
1.0mA
- 55OC
50
0.8mA
0.6mA
2
1
0.4mA
0.5
0.05mA
0A
0.2mA
IB=0A
0.2
0.1
I
B
=
0
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
1
2
3
4
5
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
BASE TO EMITTER VOLTAGE : VBE
(
V)
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
RATING CHARACTERISTIC CURVES ( 2SC2411KGP )
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig.5 DC current gain vs.
collector current
Fig. 6 Gain bandwidth product
vs. emitter current
1
1000
500
500
25OC
10
VCE=3V
Ta 25OC
=
VCE 5V
=
Ta
=
B
lC/l
=
0.5
200
100
50
200
100
50
0.2
0.1
OC
5
2
0.05
20
10
0.02
0.5
0.1 0.2 0.5
1
2
5 10 20 50 100 200 5001000
0.5
1
2
5
10
20
50
1
2
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I
C(
mA)
EMITTER CURRENT : IE mA)
(
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta 25OC
=
50
f
I
I
1MHz
=
E
0A
0A
=
C
=
20
10
5
2
0.5
1
2
5
10
20
50
V)
COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB
(
(
V)
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