2SB1197KPTQGP [CHENMKO]

Transistor,;


型号：	2SB1197KPTQGP
厂家：	CHENMKO ENTERPRISE CO. LTD.
描述：	Transistor,
文件：	总4页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CHENMKO ENTERPRISE CO.,LTD

2SB1197KPT

SURFACE MOUNT

PNP Switching Transistor

VOLTAGE 32 Volts CURRENT 0.8 Ampere

APPLICATION

* Telephone and proferssional communction equipment.

* Other switching applications.

FEATURE

SOT-23

* Small surface mounting type. (SOT-23)

* Corrector peak current (Max.=1000mA).

* Suitable for high packing density.

* Low voltage (Max.=40V) .

* High saturation current capability.

* Voltage controlled small signal switch.

(1)

(2)

(3)

CONSTRUCTION

* PNP Switching Transistor

MARKING

(

)

(

)

.055 1.40

.028 0.70

* PN @hFE as Q Grade

(

)

(

)

.047 1.20

.020 0.50

(

)

.103 2.64

* RC @hFE as R Grade

.086 (2.20)

(

)

.045 1.15

(3)

CIRCUIT

(

)

.033 0.85

(1)

(2)

Dimensions in inches and (millimeters)

SOT-23

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

V_CBOcollector-base voltage open emitter

MIN.

MAX.

-40

UNIT

−

V_CEO

V_EBO

I_C

collector-emitter voltage

emitter-base voltage

collector current DC

open base

-32

open collector

-5

-0.8

-1.0

-80

I_CM

I_BM

peak collector current

peak base current

°C

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_amb≤ 25 °C; note 1

300

+150

150

+150

−65

−

°C

T_amb

−65

°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

2003-5

RATING CHARACTERISTIC CURVES ( 2SB1197KPT )

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-a}

Note

PARAMETER

CONDITIONS

note 1

VALUE

UNIT

thermal resistance from junction to ambient

500

K/W

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T_amb= 25 °C unless otherwise speciÞed.

SYMBOL PARAMETER

CONDITIONS

MIN.

-40

MAX.

UNIT

BV_CBO

BV_CEO

BV_EBO

I_CBO

collector-base breakdown voltage I_E= 0; I_C=-50 uA

collector-emitter breakdown voltage I_B= 0; I_C=-1 mA

emitter-base breakdown voltage I_C= 0; I_E=-50 uA

−

-32

-5

−

collector cut-off current

emitter cut-off current

DC current gain

I_E= 0; V_CB= - 20 V

I_C= 0; V_EB= - 4 V

V_CE= -3V; note 1

−

-500

390

I_EBO

−

h_FE

120

I_C= -100 mA

V_CEsat

collector-emitter saturation

voltage

I_C= -500 mA, I_B=-50 mA

−

-500

C_c

f_T

collector capacitance

transition frequency

I_E= i_e= 0; V_CB=-10 V;f = 1 MHz

12Typ.

I_C= 10 mA; V_CE= - 20 V ;

f = 100 MHz

200Typ.

MHz

Note

1. Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

2. hFE: Q Gade: 120~270

R Gade: 180~390

RATING CHARACTERISTIC CURVES ( 2SB1197KPT )

Fig.1 DC Current gain vs.

collector current

Fig.2 Collector-emittersaturation

voltage vs. collector current

1000

100

-1000

-100

-10

TA=25^OC

VCE=-3V

-2V

-1V

IC/IB=50

-1m

-1

-1m

-10m

-100m

-1

-10m

-100m

-1

COLLECTOR CURRENT: I

(A)

COLLECTOR CURRENT: IC (A)

Fig.3 Gain bandwidthproduct vs.

emitter current

Fig.4 Collector output capacitance

1000

100

1000

TA=25^OC

VCE=-5V

TA=25^OC

f=1MHz

IE=0A

100

-1m

-10m

-100m

(A)

-1

-1m

-10m

-100m

-1

EMITTER CURRENT: I

COLLECTOR TO BASE VOLATGE: VCB (V)

RATING CHARACTERISTIC CURVES ( 2SB1197KPT )

Fig.5 Grounded emittterpropgation

characteristics

Fig.6 Grounded emitter output

characteristics

-1000

-200

TA=25^OC

VCE=6V

TA=25^OC

-1.0mA

-0.9mA

-0.8mA

-0.7mA

-100

-10

-1

-0.6mA

-0.5mA

-0.4mA

-100

-0.3mA

-0.2mA

-0.1mA

IB=0mA

-0.4

-0.8

-1.2

-1.6

-0

-10

-20

BASE TO EMITTER VOLTAGE: VBE (V)

COLLECTOR TO EMITTER VOLTAGE: VCE (V)

Fig.7 Grounded emitter output

characteristics

-500

-400

-20mA

-18mA

-16mA

-14mA

-12mA

-10mA

-8mA

-6mA

-4mA

-300

-200

IB=-2mA

-100

TA=25^OC

-0

-0.5

-1.0

COLLECTOR TO EMITTER VOLTAGE: VCE (V)

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