2SA1213PT [CHENMKO]
PNP Epitaxial Transistor; PNP晶体管外延
| 型号： | 2SA1213PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | PNP Epitaxial Transistor |
| 文件： | 总4页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
2SA1213PT
SMALL FLAT
PNP Epitaxial Transistor
VOLTAGE 50 Volts CURRENT 2 Ampere
APPLICATION
* Power amplifier .
FEATURE
* Small flat package. (SC-62/SOT-89)
SC-62/SOT-89
* Low saturation voltage VCE(sat)
=-0.5V(max.)(IC=-1A)
* High speed switching time: tstg= 1.0uSec (typ.)
* PC= 1.0 to 2.0W (mounted on ceramic substrate).
* High saturation current capability.
4.6MAX.
1.7MAX.
1.6MAX.
0.4+0.05
CONSTRUCTION
* PNP Switching Transistor
+0.08
0.45-0.05
+0.08
+0.08
0.40-0.05
0.40-0.05
MARKING
* HFE(O):NO
* HFE(Y):NY
1.50+0.1
1.50+0.1
1
2
3
1 Base
2 Collector ( Heat Sink )
3 Emitter
CIRCUIT
1
B
2
C
3
E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Open Emitter
SYMBOL
VCBO
MIN.
-
MAX.
-50
UNITS
Volts
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Open Base
VCEO
VEBO
IC
-
-50
-5
Volts
Volts
Amps
Amps
Amps
mW
oC
Open Collector
-
-
-2
Peak Collector Current
Peak Base Current
ICM
-
-
-2
IBM
-0.4
1000
+150
+150
+150
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TA ≤ 25OC; Note 1
PTOT
TSTG
TJ
-
-55
-
oC
TAMB
-55
oC
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2002-10
RATING CHARACTERISTIC CURVES ( 2SA1213PT )
CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
Collector Cut-off Current
CONDITION
SYMBOL
ICBO
MIN.
-
TYPE
-
MAX.
-0.1
UNITS
uA
IE=0; VCB=-50V
Emitter Cut-off Current
DC Current Gain
IC=0; VEB=-5V
ICEO
-
-
-0.1
uA
VCE=-2V; Note 1
IC=-0.5A; Note 2
IC=-2.0A
70
20
-
-
240
-
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturatio Voltage
Collector Capacitance
IC=-1A; IB=-0.05A
IC=-1A; IB=-0.05A
VCEsat
VBEsat
CC
-
-
-
-
-
-
-0.5
Volts
mVolts
pF
-1.2
IE=ie=0; VCB=10V;
f=1MHz
40
120
-
-
IC=-0.5A; VCE=-2V;
f=100MHz
Transition Frequency
fT
MHz
SWITCHING TIMES ( Between 10% and 90% levels )
PARAMETERS CONDITION
SYMBOL
ton
MIN.
-
TYPE
0.1
MAX.
-
UNITS
uSec
OUTPUT
Turn-on Time
Storage Time
Fall Time
IB2
IB2
IB1
INPUT
IB1
ts
tf
-
-
1.0
0.1
-
-
uSec
uSec
20uSec
-IB1=IB2=0.05A
Duty cycle<1%
-30V
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE(1) Classification O: 70 to 140, Y: 120 to 240
RATING CHARACTERISTIC CURVES ( 2SA1213PT )
Typical Electrical Characteristics
Figure 1. VCE - IC
Figure 2. VCE - IC
-1.6
-1.2
-0.8
-0.4
-1.6
-1.2
-0.8
-0.4
COMMON EMITTER
TA=25O
COMMON EMITTER
TA=100O
C
C
IB=-5mA
-10mA
-20mA
IB=-3mA
-5mA
-10mA
-20mA
-30mA
-30mA
-40mA
-40mA
-40mA
0
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-0.4
-0.8
-1.2
-1.6
-2.0
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
Figure 3. VCE - IC
Figure 4. hFE - IC
-1.6
-1.2
-0.8
-0.4
1000
COMMON EMITTER
VCE=-2V
COMMON EMITTER
500
300
TA=-55O
-30mA
C
TA=100OC
IB=-5mA
-10mA
-20mA
-40mA
25OC
100
-55OC
50
30
-50mA
0
10
-10
0
-0.4
-0.8
-1.2
-1.6
-2.0
-30
-100
-300
-1000
-3000
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (mA)
Figure 5. VCE(sat) - IC
Figure 6. VBE(sat) - IC
-1
-10
COMMON EMITTER
IC/IB=20
COMMON EMITTER
IC/IB=20
-0.5
-0.3
-5
-3
-55OC
-0.1
-1
TA=100OC
25OC
TA=100OC
-0.05
-0.03
25OC
-0.5
-0.3
-55OC
-0.01
-10
-0.1
-10
-30
-100
-300
-1000
-3000
-30
-100
-300
-1000
-3000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
RATING CHARACTERISTIC CURVES ( 2SA1213PT )
Typical Electrical Characteristics
Figure 7. IC - VBE
Figure 8. PC - TA
-1.6
-1.2
-0.8
-0.4
1.2
1.0
COMMON EMITTER
VCE=-2V
(1) Mounted on ceramic substrate
(1)
(2)
( 250mm2x0.8t )
(2) No heat sink
TA=100O
C
25O
-55O
C
0.8
0.6
C
0.4
0.2
0
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
20
40
60
80
100
120
OC)
140
160
BASE-EMITTER VBE (V)
AMBIENT TEMPERATURE TA
(
Figure 9. Safe Operation Area
-3000
-1000
10mS*
1mS*
IC max
(continous)
IC max (pulse)*
1S*
100mS*
-500
-300
DC operation
TA=25OC
-100
-50
-30
*: Single nonrepetitive pulse
TA=25OC
Curve must be derated linearly
with increase in temperature
Tested without a substrate
-10
-5
-3
-1
-0.1
-0.3
-1.0
-3.0
-10
-30
-100
COLLECTOR-EMITTER VOLTAGE VCE (V)
相关型号：
©2020 ICPDF网 联系我们和版权申明