KBPC3502W [CHENG-YI]

SINGLE-PHASE SILICON BRIDGE; 单相硅桥
KBPC3502W
型号: KBPC3502W
厂家: CHENG-YI ELECTRONIC CO., LTD.    CHENG-YI ELECTRONIC CO., LTD.
描述:

SINGLE-PHASE SILICON BRIDGE
单相硅桥

二极管
文件: 总2页 (文件大小:129K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KBPC35W SERIES  
SSIINNGGLLEE--PPHHAASSEE SSIILLIICCOONN BBRRIIDDGGEE  
CCHHEENNGG--YYII  
ELECTRONIC  
VOLTAGE RANGE  
50 TO 1000 VOLTS PRV  
CURRENT  
35 Amperes  
FEATURES  
UL recognized file #E149311  
Surge overload rating-400 amperese peak  
Low forward voltage drop  
Solderable cooper leads .040" diameter  
Mounting position:Any  
Electrically isolated base-1800Volts  
Materials used carries U/L recognized  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
0
Ratings at 25 C ambient temperature unless otherwise specified.  
Resistive or inductive load, 60 Hz. For capacitive load, derate current by 20%.  
KBPC  
KBPC  
KBPC  
KBPC  
KBPC  
KBPC  
KBPC  
UNITS  
35005W  
3501W  
3502W  
3504W  
3506W  
3508W  
3510W  
VRRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRMS  
VDC  
100  
1000  
Maximum Average Forward  
V(AV)  
35  
400  
1.2  
A
A
V
0
Output Current @ T =55 C  
C
Peak Forward Surge Current  
8.3 ms single half sine-wave  
IFSM  
superimposed on rated load(JEDEC Mehtod)  
Maximum DC Forward Voltage drop  
per bridge element at 17.5A DC  
V
F
0
=25 C  
Maximum DC Reverse Current  
T
@
@
10  
1
A
A
A
at rated DC Blocking Voltage  
per bridge element  
IR  
0
=100 C  
T
A
2
2
2
A S  
I t Rating for fusing (t<8.3ms)  
664  
I t  
0
Typical Thermal Resistance(Note.1)  
Operating Temperature Range  
Storage Temperature Range  
2.5  
R
JC  
C/W  
0
T
-55 to +125  
-55 to +150  
C
J
0
TSTG  
C
KBPC35W SERIES  
SSIINNGGLLEE--PPHHAASSEE SSIILLIICCOONN BBRRIIDDGGEE  
CCHHEENNGG--YYII  
ELECTRONIC  
RATING AND CHARACTERISTICS CURVES  
KBPC35W SERIES  
Fig.2 - DERATING CURVE FOR  
Fig.1 - PAEK FORWARD SURGE CURRENT  
OUTPUT RECTIFIED CURRENT  
400  
40  
30  
20  
8.3ms Single Half Sine Wave  
300  
0
T =125C  
J
200  
150  
100  
10  
60  
0
1
10  
100  
50  
100  
150  
NUMBER OF CYCLES AT 60 Hz  
0
TEMPERATURE,  
C
Fig.3 - TYPICAL FORWARD  
CHARACTERISTICS  
Fig.4 - TYPICAL REVERSE CHARACTERISTICS  
100  
10  
10  
1.0  
1.0  
0
T =25 C  
J
0.1  
0.1  
.01  
0
20  
40  
60  
80  
100  
120  
140  
.01  
.4  
.6  
.8  
1.0  
1.2  
1.4  
1.6  
PERCENT OF RATED PEAK REVERSE VOLTAGE  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  

相关型号:

KBPC3502W-G

Silicon Bridge Rectifiers
COMCHIP

KBPC3502W-LF

Bridge Rectifier Diode, 1 Phase, 35A, 200V V(RRM), Silicon, ROHS COMPLIANT, METAL, KBPC-W, 4 PIN
WTE

KBPC3502WM

暂无描述
SEMIKRON

KBPC3502WP

Silicon-Bridge-Rectifiers
DIOTEC

KBPC3502WP

Bridge Rectifier Diode, 1 Phase, 35A, 200V V(RRM), Silicon
SEMIKRON

KBPC3504

35 AMP SILICON BRIDGE RECTIFIER
FUJI

KBPC3504

15,25,35A HIGH CURRENT BRIDGE RECTIFIER
WTE

KBPC3504

SINGLE-PHASE SILICON BRIDGE
GOOD-ARK

KBPC3504

10A/15A/25A/35A SINGLE - PHASE SILICON BRIDGE
SEMTECH

KBPC3504

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
DCCOM

KBPC3504

SINGLE PHASE SILICON BRIDGE RECTIFIER
SSE

KBPC3504

SINGLE PHASE SILICON BRIDGE RECTIFIER
LUNSURE