GBU4B [CHENG-YI]
SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS; 硅桥式整流器玻璃钝化桥式整流器
| 型号： | GBU4B |
| 厂家： | 
CHENG-YI ELECTRONIC CO., LTD. |
| 描述： | SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBU4A thru GBU4M SERIES
SSIILLIICCOONN BBRRIIDDGGEE RREECCTTIIFFIIEERRSS
GGLLAASSSS PPAASSSSIIVVAATTEEDD
CCHHEENNGG--YYII
BBRRIIDDGGEE RREECCTTIIFFIIEERRSS
ELECTRONIC
REVERSE VOLTAGE -50 to 1000 Volts
FORWARD CURRENT -4.0 Amperes
FEATURES
Surge overload rating-150 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Plastic material has Underwriters Laboratory
Flammability classification 94V-O
Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBU4A
GBU4B GBU4D GBU4G GBU4J
GBU4K GBU4M
UNITS
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
100
1000
4.0
2.4
Maximum Average Forward (with heatsink Note2)
I(AV)
A
0
Rectified Current @ T =100 C (without heatsink)
C
Peak Forward Surge Current
8.3 ms single half sine-wave
IFSM
150
A
superimposed on rated load(JEDEC Method)
V
F
1.0
V
Maximum DC Forward Voltage at 2.0A DC
0
=25 C
T
5.0
500
Maximum DC Reverse Current
at rated DC Blocking Voltage
@
@
A
IR
A
0
=100 C
T
A
2
2
2
A S
I t Rating for fusing (t<8.3ms)
93
I t
C
J
F
P
Typical Junction Capacitance per element(Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
45
0
2.2
R
JC
C/W
0
T
J
-55 to +150
-55 to +150
C
0
TSTG
Storage Temperature Range
C
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 50mm x 50mm X 1.6mm Cu Plate Heatsink.
GBU4A thru GBU4M SERIES
SSIILLIICCOONN BBRRIIDDGGEE RREECCTTIIFFIIEERRSS
GGLLAASSSS PPAASSSSIIVVAATTEEDD
CCHHEENNGG--YYII
BBRRIIDDGGEE RREECCTTIIFFIIEERRSS
ELECTRONIC
RATING AND CHARACTERISTICS CURVES
GBU4A THRU GBU4M
FIG. 2 - MAXIMUM NON-REPETITIVE
FIG. 1 - FORWARD CURRENT DERATING CURVE
SURGE CURRENT
5.0
180
160
WITH HEATSINK
4.0
140
120
3.0
100
80
60
40
20
0
WITHOUT HEATSINK
2.0
SINGLE PHASE HALF WAVE 60Hz
1.0
RESISTIVE OR INDUCTIVE LOAD
Single Half Sine-Wave
(JEDEC METHOD)
0.0
0
20
40
60
80
100
120
140
1
2
5
10
20
50
100
0
CASE TEMPERATURE,
C
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
FIG. 4 - TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
10
0.1
0
T =25C
J
0
=25C, f= 1MHz
T
PULSE WIDTH:300
S
J
1.0
0.01
0.1
1.0
4.0
10.0
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
REVERSE VOLTAGE, VOLTS
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
1000
0
T =125C
J
100
0
T =100C
J
10
0
T =50 C
J
1.0
0
T =25 C
J
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
相关型号：
GBU4B-E3
DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode
VISHAY
GBU4B-E3/1
DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode
VISHAY
GBU4B-E3/22
Bridge Rectifier Diode, 1 Phase, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBU, 4 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明