CMT04N60GN220 [CHAMP]
POWER MOSFET; 功率MOSFET
| 型号： | CMT04N60GN220 |
| 厂家： | 
CHAMPION MICROELECTRONIC CORP. |
| 描述： | POWER MOSFET |
| 文件： | 总7页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. Designed for
high voltage, high speed switching applications such as
power supplies, converters, power motor controls and
bridge circuits.
Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Top View
D
G
S
2
3
1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current － Continuous
－ Pulsed
Symbol
ID
Value
Unit
4.0
14
A
IDM
Gate-to-Source Voltage － Continue
－ Non-repetitive
VGS
VGSM
PD
±30
±40
V
V
Total Power Dissipation
W
TO-220
83
30
TO-220FP
℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃
TJ, TSTG
EAS
-55 to 150
80
mJ
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω)
Thermal Resistance － Junction to Case
－ Junction to Ambient
℃/W
θJC
θJA
TL
1.30
100
260
℃
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
Page 1
CMT04N60
POWER MOSFET
ORDERING INFORMATION
Part Number
CMT04N60GN220*
CMT04N60XN220*
Package
TO-220
TO-220
CMT04N60GN220FP*
TO-220 Full Package
TO-220 Full Package
CMT04N60XN220FP*
*Note: G : Suffix for Pb Free Product
X : Suffix for Halogen and Pb Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT04N60
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Symbol
Min
Typ
Max
Units
V(BR)DSS
600
V
Drain-Source Leakage Current
IDSS
IGSSF
IGSSR
VGS(th)
uA
nA
nA
V
(VDS =600 V, VGS = 0 V)
1
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
100
Gate-Source Leakage Current-Reverse
(Vgsr = - 30 V, VDS = 0 V)
100
4.0
2.2
Gate Threshold Voltage
2.0
2.5
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) *
Forward Transconductance (VDS = 50 V, ID = 2.0 A) *
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
Ω
mhos
pF
Input Capacitance
540
125
8.0
12
760
180
20
(VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz)
pF
pF
Reverse Transfer Capacitance
Turn-On Delay Time
(VDD = 300 V, ID = 4.0 A,
Rise Time
20
ns
ns
ns
ns
7.0
19
10
V
GS = 10 V,
Turn-Off Delay Time
Fall Time
td(off)
tf
40
RG = 9.1Ω) *
10
20
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Qg
5.0
2.7
2.0
4.5
10
nC
nC
nC
(VDS = 480 V, ID = 4.0 A,
Qgs
Qgd
LD
VGS = 10 V)*
nH
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
LS
7.5
nH
(Measured from the source lead 0.25” from package to source bond
pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
(IS = 4.0 A,
VSD
ton
trr
1.5
V
Forward Turn-On Time
dIS/dt = 100A/μs)
**
ns
ns
Reverse Recovery Time
655
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
Page 2
CMT04N60
POWER MOSFET
TYPICAL CHARACTERISTICS
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
Page 3
CMT04N60
POWER MOSFET
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
Page 4
CMT04N60
POWER MOSFET
TO-220
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
Page 5
CMT04N60
POWER MOSFET
PACKAGE DIMENSION
TO-220
TO-220FP
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
Page 6
CMT04N60
POWER MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City,
Taipei County 22102,
Taiwan R.O.C
TEL: +886-3-567 9979
FAX: +886-3-567 9909
TEL: +886-2-2696 3558
FAX: +886-2-2696 3559
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
Page 7
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